Patents by Inventor Hsiao Wei Chang
Hsiao Wei Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240088023Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.Type: ApplicationFiled: November 20, 2023Publication date: March 14, 2024Inventors: Shao-Kuan LEE, Kuang-Wei YANG, Cherng-Shiaw TSAI, Cheng-Chin LEE, Ting-Ya LO, Chi-Lin TENG, Hsin-Yen HUANG, Hsiao-Kang CHANG, Shau-Lin SHUE
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Patent number: 11469079Abstract: A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.Type: GrantFiled: March 14, 2017Date of Patent: October 11, 2022Assignee: LAM RESEARCH CORPORATIONInventors: Kwame Eason, Dengliang Yang, Pilyeon Park, Faisal Yaqoob, Joon Hong Park, Mark Kawaguchi, Ivelin Angelov, Ji Zhu, Hsiao-Wei Chang
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Patent number: 11022285Abstract: A lighting control unit of a light assembly includes a first plate, a power circuit board configured to receive power for the light assembly, a light blender configured to transform movement information into one or more control signals to modify one or more lighting parameters associated with a light source of the light assembly, and a second plate with a first side, wherein the light blender is mounted on the first side, and the second plate is rotatable in relation to the first plate.Type: GrantFiled: April 28, 2020Date of Patent: June 1, 2021Inventors: Bret Recor, Seth Murray, Matthew Swinton, Hsiao-wei Chang, Wen-pin Tsai
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Patent number: 11011388Abstract: Methods and apparatus for laterally etching unwanted material from the sidewalls of a recessed feature are described herein. In various embodiments, the method involves etching a portion of the sidewalls, depositing a protective film over a portion of the sidewalls, and cycling the etching and deposition operations until the unwanted material is removed from the entire depth of the recessed feature. Each etching and deposition operation may target a particular depth along the sidewalls of the feature. In some cases, the unwanted material is removed from the bottom of the feature up, and in other cases the unwanted material is removed from the top of the feature down. Some combination of these may also be used.Type: GrantFiled: March 7, 2019Date of Patent: May 18, 2021Assignee: Lam Research CorporationInventors: Kwame Eason, Pilyeon Park, Mark Naoshi Kawaguchi, Seung-Ho Park, Hsiao-Wei Chang
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Publication number: 20200256550Abstract: A lighting control unit of a light assembly includes a first plate, a power circuit board configured to receive power for the light assembly, a light blender configured to transform movement information into one or more control signals to modify one or more lighting parameters associated with a light source of the light assembly, and a second plate with a first side, wherein the light blender is mounted on the first side, and the second plate is rotatable in relation to the first plate.Type: ApplicationFiled: April 28, 2020Publication date: August 13, 2020Applicant: FADE STUDIO INC.Inventors: Bret RECOR, Seth MURRAY, Matthew SWINTON, Hsiao-wei CHANG, Wen-pin TSAI
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Patent number: 10683999Abstract: A light assembly includes an arm with a frame, a hinge, and a magnet, wherein the hinge is in contact with the magnet and is movable along a groove within the frame, and a lighting control unit that includes a first plate, a power circuit board configured to receive power for the light assembly, a light blender configured to transform movement information into one or more control signals to control one or more lighting parameters associated with a light source of the light assembly, and a second plate with a first side, wherein the light blender is mounted on the first side, and the second plate is rotatable in relation to the first plate.Type: GrantFiled: June 3, 2016Date of Patent: June 16, 2020Assignee: FADE STUDIO INC.Inventors: Bret Recor, Seth Murray, Matthew Swinton, Hsiao-wei Chang, Wen-pin Tsai
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Publication number: 20190206697Abstract: Methods and apparatus for laterally etching unwanted material from the sidewalls of a recessed feature are described herein. In various embodiments, the method involves etching a portion of the sidewalls, depositing a protective film over a portion of the sidewalls, and cycling the etching and deposition operations until the unwanted material is removed from the entire depth of the recessed feature. Each etching and deposition operation may target a particular depth along the sidewalls of the feature. In some cases, the unwanted material is removed from the bottom of the feature up, and in other cases the unwanted material is removed from the top of the feature down. Some combination of these may also be used.Type: ApplicationFiled: March 7, 2019Publication date: July 4, 2019Inventors: Kwame Eason, Pilyeon Park, Mark Naoshi Kawaguchi, Seung-Ho Park, Hsiao-Wei Chang
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Patent number: 10276398Abstract: Methods and apparatus for laterally etching unwanted material from the sidewalls of a recessed feature are described herein. In various embodiments, the method involves etching a portion of the sidewalls, depositing a protective film over a portion of the sidewalls, and cycling the etching and deposition operations until the unwanted material is removed from the entire depth of the recessed feature. Each etching and deposition operation may target a particular depth along the sidewalls of the feature. In some cases, the unwanted material is removed from the bottom of the feature up, and in other cases the unwanted material is removed from the top of the feature down. Some combination of these may also be used.Type: GrantFiled: August 2, 2017Date of Patent: April 30, 2019Assignee: Lam Research CorporationInventors: Kwame Eason, Pilyeon Park, Mark Naoshi Kawaguchi, Seung-Ho Park, Hsiao-Wei Chang
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Publication number: 20190043732Abstract: Methods and apparatus for laterally etching unwanted material from the sidewalls of a recessed feature are described herein. In various embodiments, the method involves etching a portion of the sidewalls, depositing a protective film over a portion of the sidewalls, and cycling the etching and deposition operations until the unwanted material is removed from the entire depth of the recessed feature. Each etching and deposition operation may target a particular depth along the sidewalls of the feature. In some cases, the unwanted material is removed from the bottom of the feature up, and in other cases the unwanted material is removed from the top of the feature down. Some combination of these may also be used.Type: ApplicationFiled: August 2, 2017Publication date: February 7, 2019Inventors: Kwame Eason, Pilyeon Park, Mark Naoshi Kawaguchi, Seung-Ho Park, Hsiao-Wei Chang
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Publication number: 20180269070Abstract: A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.Type: ApplicationFiled: March 14, 2017Publication date: September 20, 2018Inventors: Kwame Eason, Dengliang Yang, Pilyeon Park, Faisal Yaqoob, Joon Hong Park, Mark Kawaguchi, Ivelin Angelov, Ji Zhu, Hsiao-Wei Chang
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Publication number: 20160356466Abstract: A light assembly includes an arm with a frame, a hinge, and a magnet, wherein the hinge is in contact with the magnet and is movable along a groove within the frame, and a lighting control unit that includes a first plate, a power circuit board configured to receive power for the light assembly, a light blender configured to transform movement information into one or more control signals to control one or more lighting parameters associated with a light source of the light assembly, and a second plate with a first side, wherein the light blender is mounted on the first side, and the second plate is rotatable in relation to the first plate.Type: ApplicationFiled: June 3, 2016Publication date: December 8, 2016Applicant: FADE STUDIO INC.Inventors: Bret RECOR, Seth MURRAY, Matthew SWINTON, Hsiao-wei CHANG, Wen-pin TSAI
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Publication number: 20120115332Abstract: A method for processing a substrate includes etching a surface of the substrate using an etching chemistry in a plasma chamber, the etching configured to define one or more features on the surface of the substrate. The features have some etch polymer residues as a result of the etching. The etching is terminated. A dry flash chemistry is applied into the plasma chamber. The plasma chamber is powered for a period of time between about 5 seconds and about 10 seconds to perform a dry flash etch. During the dry flash etch, the chamber is set to a low pressure of between about 5 mTorr and about 40 mTorr. The dry flash etch acts to weaken adhesion of the etch polymer residues to the features. The substrate is moved from plasma chamber and into a wet clean chamber for cleaning which removes the etch polymer residues during fluid cleaning.Type: ApplicationFiled: January 19, 2012Publication date: May 10, 2012Applicant: LAM RESEARCH CORPORATIONInventors: Seokmin Yun, Mark Wilcoxson, Ji Zhu, Kevin Chuang, Hsiao Wei Chang, David Lou
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Publication number: 20120109616Abstract: The invention discloses to a method to synchronize and synthesize bus transaction traces for an un-timed virtual environment. The steps are the followings providing a simulation environment and an emulation environment; recording the transaction of intellectual property (IP) through the bus, collecting the plurality of continuously transferred transaction set, connecting a plurality of transaction blocks recorded from the simulation environment, and assigning a corresponding number to the transaction block; labeling a begin time mark and a transfer time mark; initializing a plurality of parameters; taking a transaction block; judging the type of the transaction block respectively; and after respectively assuring that the transaction block is the last transaction block in the simulated transaction block series, output these parameter values.Type: ApplicationFiled: March 9, 2011Publication date: May 3, 2012Applicant: Global Unichip CorporationInventors: Hsiao-Wei Chang, Pei-Sheng Su, Sheng-Hsun Cho
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Publication number: 20090211596Abstract: A system and method for removing post-etch polymer residue from a surface of a substrate includes identifying a dry flash chemistry for removing the post-etch polymer residue from the surface of the substrate. The dry flash chemistry is configured to selectively remove the post-etch polymer residue left behind by an etch operation in a region where a feature was formed through a low-k dielectric film layer. The identified dry flash chemistry is applied using a short flash process to remove at least a portion of the post-etch polymer residue while minimizing the damage to the dielectric film layer. A wet cleaning chemistry is then applied to the surface of the substrate. The application of the wet cleaning chemistry aids in substantially removing the remaining post-etch polymer residue left behind by the short flash process.Type: ApplicationFiled: July 11, 2007Publication date: August 27, 2009Applicant: LAM RESEARCH CORPORATIONInventors: Seokmin Yun, Mark Wilcoxson, Ji Zhu, Kevin Chuang, Hsiao Wei Chang, David Lou
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Patent number: D754901Type: GrantFiled: July 22, 2014Date of Patent: April 26, 2016Assignee: BOX CLEVER, LLCInventors: Bret Recor, Seth Murray, Matthew Swinton, Hsiao-wei Chang, Wen-pin Tsai
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Patent number: D775755Type: GrantFiled: March 15, 2016Date of Patent: January 3, 2017Assignee: BOX CLEVER, LLCInventors: Bret Recor, Seth Murray, Matthew Swinton, Hsiao-wei Chang, Wen-pin Tsai