Abstract: A fabrication method of a trench metal oxide-semiconductor (MOS) transistor is provided. After the gate trenches are formed in the epitaxial layer, impurities of a first conductive type are implanted into the epitaxial layer by using a blanket implantation process. A polysilicon pattern filling the gate trenches and covering a predetermined range of epitaxial layer surrounding the gate trenches is formed on the epitaxial layer. Impurities of a second conductive type are implanted through the polysilicon pattern into the epitaxial layer to form a well. Impurities of the first conductive type are implanted to form a plurality of first doping regions. A portion of the polysilicon layer above the upper surface of the epitaxial layer is removed by etching to form a plurality of polysilicon gates. Impurities in the first doping regions are driven in to form a plurality of source regions adjacent to the gate trenches.

Abstract: A fabrication method of a trench metal oxide-semiconductor (MOS) transistor is provided. After the gate trenches are formed in the epitaxial layer, impurities of a first conductive type are implanted into the epitaxial layer by using a blanket implantation process. A polysilicon pattern filling the gate trenches and covering a predetermined range of epitaxial layer surrounding the gate trenches is formed on the epitaxial layer. Impurities of a second conductive type are implanted through the polysilicon pattern into the epitaxial layer to form a well. Impurities of the first conductive type are implanted to form a plurality of first doping regions. A portion of the polysilicon layer above the upper surface of the epitaxial layer is removed by etching to form a plurality of polysilicon gates. Impurities in the first doping regions are driven in to form a plurality of source regions adjacent to the gate trenches.

Abstract: A test pen includes an integral hollow pen barrel. The hollow pen barrel is divided into four sections in order being a dip section, a testing and observation section, a drying section, and a sealed rear section. The dip section has a front opening allowing a slender water-absorbing member to pass therethrough. An air balance hole is provided on the dip section of the pen barrel to facilitate liquid siphoning. A pen cap for capping the dip section has a flexible inner fringe for keeping the dip section airtight. A rear plug is provided for sealing the rear section. A testing member is installed in the testing and observation section. The testing member includes a support card, a solid carrier, a conjugate release pad partially overlapping the front end of the solid carrier, an absorbing pad partially overlapping the rear end of the solid carrier, and a cover tape.