Patents by Inventor Hsiao-Wei Yeh
Hsiao-Wei Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9323155Abstract: A method of lithography patterning includes forming a first resist pattern on a substrate, wherein the first resist pattern including a plurality of openings. A second resist pattern is formed on the substrate and within the plurality of openings of the first resist pattern, wherein the second resist pattern includes at least one opening therein on the substrate. The first resist pattern is removed to uncover the substrate underlying the first resist pattern.Type: GrantFiled: June 3, 2014Date of Patent: April 26, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Kuang Chen, Hsiao-Wei Yeh, Chih-An Lin, Chien-Wei Wang, Feng-Cheng Hsu
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Publication number: 20140272714Abstract: A method of lithography patterning includes forming a first resist pattern on a substrate, wherein the first resist pattern including a plurality of openings. A second resist pattern is formed on the substrate and within the plurality of openings of the first resist pattern, wherein the second resist pattern includes at least one opening therein on the substrate. The first resist pattern is removed to uncover the substrate underlying the first resist pattern.Type: ApplicationFiled: June 3, 2014Publication date: September 18, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: CHUN-KUANG CHEN, Hsiao-Wei Yeh, Chih-An Lin, Chien-Wei Wang, Feng-Cheng Hsu
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Patent number: 8741552Abstract: A method of lithography patterning includes forming a first resist pattern on a substrate, wherein the first resist pattern including a plurality of openings. A second resist pattern is formed on the substrate and within the plurality of openings of the first resist pattern, wherein the second resist pattern includes at least one opening therein on the substrate. The first resist pattern is removed to uncover the substrate underlying the first resist pattern.Type: GrantFiled: February 9, 2010Date of Patent: June 3, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Kuang Chen, Hsiao-Wei Yeh, Chih-An Lin, Chien-Wei Wang, Feng-Cheng Hsu
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Publication number: 20140135657Abstract: According to one embodiment of a management system for damage risk of tissue pressure, at least one pressure sensor is deployed on at least one pressure-withstanding location on a body surface of a user, and detects a plurality of extremity pressure signals from the at least a pressure-withstanding location. An information processing device uses the plurality of extremity pressure signals to compute and store at least one risk assessment index, uses a plurality of features of the plurality of extremity pressure signals to compute at least one risk adjustment factor, and then uses the at least one risk adjustment factor to calibrate the at least one risk assessment index.Type: ApplicationFiled: August 13, 2013Publication date: May 15, 2014Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chi-Kang Wu, Tsai-Ya Lai, Hsiao-Wei Yeh, Yu-Ting Tseng
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Patent number: 8460856Abstract: A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.Type: GrantFiled: September 21, 2011Date of Patent: June 11, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsiao-Wei Yeh, Jen-Chieh Shih, Jian-Hong Chen
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Patent number: 8158335Abstract: The present invention includes a lithography method comprising forming a first patterned insist layer including at least one opening therein over a substrate. A water-soluble polymer layer is formed over the first patterned resist layer and the substrate, whereby a reaction occurs at the interface of the first patterned resist layer and the water-soluble polymer layer. The non-reacted water-soluble polymer layer is removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at least one opening of the first patterned resist layer or abuts at least one portion of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layers as a mask.Type: GrantFiled: September 15, 2008Date of Patent: April 17, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsiao-Wei Yeh, Ching-Yu Chang, Jian-Hong Chen, Chih-An Lin
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Publication number: 20120009524Abstract: A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.Type: ApplicationFiled: September 21, 2011Publication date: January 12, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsiao-Wei Yeh, Jen-Chieh Shih, Jian-Hong Chen
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Patent number: 8039195Abstract: A method of lithography patterning includes forming a resist pattern on a substrate, the resist pattern including at least one desired opening and at least one padding opening therein on the substrate; forming a patterned photosensitive material layer on the resist pattern and the substrate, wherein the patterned photosensitive material layer covers the padding opening of the resist pattern; and applying a resolution enhancement lithography by assist of chemical shrink (RELACS) process to the desired opening of the resist pattern.Type: GrantFiled: February 8, 2008Date of Patent: October 18, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jen-Chieh Shih, Hsiao-Wei Yeh
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Patent number: 8029969Abstract: A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.Type: GrantFiled: May 14, 2007Date of Patent: October 4, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsiao-Wei Yeh, Jen-Chieh Shih, Jian-Hong Chen
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Publication number: 20100310995Abstract: A method of lithography patterning includes forming a first resist pattern on a substrate, wherein the first resist pattern including a plurality of openings. A second resist pattern is formed on the substrate and within the plurality of openings of the first resist pattern, wherein the second resist pattern includes at least one opening therein on the substrate. The first resist pattern is removed to uncover the substrate underlying the first resist pattern.Type: ApplicationFiled: February 9, 2010Publication date: December 9, 2010Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Kuang Chen, Hsiao-Wei Yeh, Chih-An Lin, Chien-Wei Wang, Feng-Cheng Hsu
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Publication number: 20100209852Abstract: The present disclosure provides a method for fabricating a semiconductor device using a track pipeline system. The method includes storing a plurality of chemicals in a plurality of storage units of the system, wherein each storage unit is operable to store one of the chemicals, mixing the chemicals into a mixture, and dispensing the mixture onto a wafer using a nozzle of the system.Type: ApplicationFiled: February 19, 2009Publication date: August 19, 2010Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsiao-Wei Yeh, Chi-Kang Chang, Jian-Hong Chen, Kuo-Chun Huang
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Patent number: 7777184Abstract: A method for photoresist characterization includes forming a photoresist on a supportive structure; and characterizing the photoresist using a metrology tool selected from the group consisting of a transmission electron microscope (TEM), a scanning electron microscope (SEM), an atomic force microscope (AFM), a small angle X-ray scattering (SAXS) and a laser diffraction particle analyzer.Type: GrantFiled: October 2, 2007Date of Patent: August 17, 2010Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsiao-Wei Yeh, Jen-Chieh Shih
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Publication number: 20100068656Abstract: The present invention includes a lithography method comprising forming a first patterned insist layer including at least one opening therein over a substrate. A water-soluble polymer layer is formed over the first patterned resist layer and the substrate, whereby a reaction occurs at the interface of the first patterned resist layer and the water-soluble polymer layer. The non-reacted water-soluble polymer layer is removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at least one opening of the first patterned resist layer or abuts at least one portion of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layers as a mask.Type: ApplicationFiled: September 15, 2008Publication date: March 18, 2010Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsiao-Wei Yeh, Ching-Yu Chang, Jian-Hong Chen, Chih-An Lin
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Publication number: 20090203224Abstract: A method of lithography patterning includes forming a resist pattern on a substrate, the resist pattern including at least one desired opening and at least one padding opening therein on the substrate; forming a patterned photosensitive material layer on the resist pattern and the substrate, wherein the patterned photosensitive material layer covers the padding opening of the resist pattern; and applying a resolution enhancement lithography by assist of chemical shrink (RELACS) process to the desired opening of the resist pattern.Type: ApplicationFiled: February 8, 2008Publication date: August 13, 2009Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jen-Chieh Shih, Hsiao-Wei Yeh
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Publication number: 20090057554Abstract: A method for photoresist characterization includes forming a photoresist on a supportive structure; and characterizing the photoresist using a metrology tool selected from the group consisting of a transmission electron microscope (TEM), a scanning electron microscope (SEM), an atomic force microscope (AFM), a small angle X-ray scattering (SAXS) and a laser diffraction particle analyzer.Type: ApplicationFiled: October 2, 2007Publication date: March 5, 2009Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsiao-Wei Yeh, Jen-Chieh Shih
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Publication number: 20080286682Abstract: A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.Type: ApplicationFiled: May 14, 2007Publication date: November 20, 2008Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsiao-Wei Yeh, Jen-Chieh Shih, Jian-Hong Chen
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Publication number: 20080230798Abstract: An active matrix organic electroluminescent substrate includes a substrate having a controlling element region and a luminescent region, a thin film transistor, a first passivation layer, a conductive layer electrically connected to the thin film transistor, and a second passivation layer disposed on the first passivation layer and the conductive layer. The second passivation layer has an opening partially exposing the conductive layer, and a step-shaped structure located between the controlling element region and the luminescent region.Type: ApplicationFiled: May 21, 2007Publication date: September 25, 2008Inventors: Shu-Hui Huang, Hsiao-Wei Yeh, Min-Ling Hung, Hsia-Tsai Hsiao