Abstract: Provided is a pharmaceutical composition including gastrodin and a use thereof for the prevention or the treatment of amyotrophic lateral sclerosis. The pharmaceutical composition is effective in reducing neuronal axon degeneration and neurofibromin accumulation, improving symptoms of amyotrophic lateral sclerosis and extending life of patients of amyotrophic lateral sclerosis.

Abstract: A LDMOS transistor device includes a substrate including a first insulating structure formed therein, a gate formed on the substrate and covering a portion of the first insulating structure, a drain region and a source region formed in the substrate at two respective sides of the gate, a base region encompassing the source region, and a doped layer formed under the base region. The drain region and the source region include a first conductivity type, the base region and the doped layer include a second conductivity type, and the second conductivity type is complementary to the first conductivity type. A top of the doped layer contacts a bottom of the base region. A width of the doped layer is larger than a width of the base region.

Abstract: A method of fabricating a high voltage device includes the step of forming a patterned photoresist layer on a conductive layer and a dielectric below the conductive. The conductive layer and the dielectric layer are patterned by taking the patterned photoresist layer as a mask. Subsequently the patterned photoresist layer is shrunk. The conductive layer and the dielectric layer are then patterned by taking the shrunk photoresist layer as a mask.

Abstract: A LDMOS transistor device includes a substrate including a first insulating structure formed therein, a gate formed on the substrate and covering a portion of the first insulating structure, a drain region and a source region formed in the substrate at two respective sides of the gate, a base region encompassing the source region, and a doped layer formed under the base region. The drain region and the source region include a first conductivity type, the base region and the doped layer include a second conductivity type, and the second conductivity type is complementary to the first conductivity type. A top of the doped layer contacts a bottom of the base region. A width of the doped layer is larger than a width of the base region.

Abstract: A method of fabricating a high voltage device includes the step of forming a patterned photoresist layer on a conductive layer and a dielectric below the conductive. The conductive layer and the dielectric layer are patterned by taking the patterned photoresist layer as a mask. Subsequently the patterned photoresist layer is shrunk. The conductive layer and the dielectric layer are then patterned by taking the shrunk photoresist layer as a mask.