Patents by Inventor Hsiao-Yin Hsieh

Hsiao-Yin Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250079227
    Abstract: A wafer retaining device is provided. The wafer retaining device includes a platen configured to support a semiconductor wafer, and a retainer assembly. The retainer assembly includes a mounting member coupled to the platen, a lever, and a biasing member including a first end coupled to the lever and a second end coupled to the mounting member. The biasing member is configured to bias the lever to a closed position relative to the platen. The lever inhibits movement of the semiconductor wafer when the lever is in the closed position.
    Type: Application
    Filed: January 18, 2024
    Publication date: March 6, 2025
    Inventors: Lu-Hsun LIN, Tsung-Min LIN, Chin Tsung LIN, Hsiao-Yin HSIEH, Po-Tang TSENG
  • Patent number: 9620326
    Abstract: An apparatus for extending the useful life of an ion source, comprising an arc chamber containing a plurality of cathodes to be used sequentially and a plurality of repellers to protect cathodes when not in use. The arc chamber includes an arc chamber housing defining a reaction cavity, gas injection openings, a plurality of cathodes, and at least one repeller element. A method for extending the useful life of an ion source includes providing power to a first cathode of an arc chamber in an ion source, operating the first cathode, detecting a failure or degradation in performance of the first cathode, energizing a second cathode, and continuing operation of the arc chamber with the second cathode.
    Type: Grant
    Filed: December 22, 2014
    Date of Patent: April 11, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chin-Tsung Lin, Hsiao-Yin Hsieh, Chi-Hao Huang, Hong-Shing Chou, Yeh-Chieh Wang
  • Publication number: 20150130353
    Abstract: An apparatus for extending the useful life of an ion source, comprising an arc chamber containing a plurality of cathodes to be used sequentially and a plurality of repellers to protect cathodes when not in use. The arc chamber includes an arc chamber housing defining a reaction cavity, gas injection openings, a plurality of cathodes, and at least one repeller element. A method for extending the useful life of an ion source includes providing power to a first cathode of an arc chamber in an ion source, operating the first cathode, detecting a failure or degradation in performance of the first cathode, energizing a second cathode, and continuing operation of the arc chamber with the second cathode.
    Type: Application
    Filed: December 22, 2014
    Publication date: May 14, 2015
    Inventors: Chin-Tsung LIN, Hsiao-Yin HSIEH, Chi-Hao HUANG, Hong-Shing CHOU, Yeh-Chieh WANG
  • Patent number: 8933630
    Abstract: An apparatus for extending the useful life of an ion source, comprising an arc chamber containing a plurality of cathodes to be used sequentially and a plurality of repellers to protect cathodes when not in use. The arc chamber includes an arc chamber housing defining a reaction cavity, gas injection openings, a plurality of cathodes, and at least one repeller element. A method for extending the useful life of an ion source includes providing power to a first cathode of an arc chamber in an ion source, operating the first cathode, detecting a failure or degradation in performance of the first cathode, energizing a second cathode, and continuing operation of the arc chamber with the second cathode.
    Type: Grant
    Filed: December 19, 2012
    Date of Patent: January 13, 2015
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chin-Tsung Lin, Hsiao-Yin Hsieh, Chi-Hao Huang, Hong-Hsing Chou, Yeh-Chieh Wang