Abstract: In one embodiment of the present invention, inert nano-sized particles having dimensions from 1 nm to 1,000 nm are added into a solder ball. The inert nano-sized particles may comprise metal oxides, metal nitrides, metal carbides, metal borides, etc. The inert nano-sized particles may be a single compound, or may be a metallic material having a coating of a different material. In another embodiment of the present invention, a small quantity of at least one elemental metal that forms stable high melting intermetallic compound with tin is added to a solder ball. The added at least one elemental metal forms precipitates of intermetallic compounds with tin, which are dispersed as fine particles in the solder.

Abstract: In one embodiment of the present invention, inert nano-sized particles having dimensions from 1 nm to 1,000 nm are added into a solder ball. The inert nano-sized particles may comprise metal oxides, metal nitrides, metal carbides, metal borides, etc. The inert nano-sized particles may be a single compound, or may be a metallic material having a coating of a different material. In another embodiment of the present invention, a small quantity of at least one elemental metal that forms stable high melting intermetallic compound with tin is added to a solder ball. The added at least one elemental metal forms precipitates of intermetallic compounds with tin, which are dispersed as fine particles in the solder.

Abstract: In one embodiment of the present invention, inert nano-sized particles having dimensions from 1 nm to 1,000 nm are added into a solder ball. The inert nano-sized particles may comprise metal oxides, metal nitrides, metal carbides, metal borides, etc. The inert nano-sized particles may be a single compound, or may be a metallic material having a coating of a different material. In another embodiment of the present invention, a small quantity of at least one elemental metal that forms stable high melting intermetallic compound with tin is added to a solder ball. The added at least one elemental metal forms precipitates of intermetallic compounds with tin, which are dispersed as fine particles in the solder.

Abstract: A frontside of a chip is bonded to a top surface of a chip carrier. Seal material is dispensed at a periphery of the top surface of the chip carrier. A solder TIM having a first side and a second side is provided. The first side of the TIM contacts a backside of the chip. A reflow is performed to melt the TIM. The second side of the TIM is bonded to a lid. The seal material is cured. The lid is attached to the top surface of the chip carrier. Backfill material is injected into a space between the top surface of the chip carrier and the lid. The backfill material abuts sides of the TIM. The backfill material is cured. TIM solder cracking and associated thermal degradation are mitigated.

Abstract: An apparatus for providing uniform axial load distribution for laminate layers of multilayer ceramic chip carriers includes a base plate configured to support a plurality of green sheet layers thereon, the base plate having at least one resiliently mounted load support bar disposed adjacent outer edges of the base plate. The load support bar is mounted on one or more biasing members such that the top surface of the support bar extends above the top surface of the base plate by a selected distance.

Abstract: A frontside of a chip is bonded to a top surface of a chip carrier. Seal material is dispensed at a periphery of the top surface of the chip carrier. A solder TIM having a first side and a second side is provided. The first side of the TIM contacts a backside of the chip. A reflow is performed to melt the TIM. The second side of the TIM is bonded to a lid. The seal material is cured. The lid is attached to the top surface of the chip carrier. Backfill material is injected into a space between the top surface of the chip carrier and the lid. The backfill material abuts sides of the TIM. The backfill material is cured. TIM solder cracking and associated thermal degradation are mitigated.

Abstract: An apparatus for providing uniform axial load distribution for laminate layers of multilayer ceramic chip carriers includes a base plate configured to support a plurality of green sheet layers thereon, the base plate having at least one resiliently mounted load support bar disposed adjacent outer edges of the base plate. The load support bar is mounted on one or more biasing members such that the top surface of the support bar extends above the top surface of the base plate by a selected distance.

Abstract: An apparatus for providing uniform axial load distribution for laminate layers of multilayer ceramic chip carriers includes a base plate configured to support a plurality of green sheet layers thereon, the base plate having at least one resiliently mounted load support bar disposed adjacent outer edges of the base plate. The load support bar is mounted on one or more biasing members such that the top surface of the support bar extends above the top surface of the base plate by a selected distance.

Abstract: In one embodiment of the present invention, inert nano-sized particles having dimensions from 1 nm to 1,000 nm are added into a solder ball. The inert nano-sized particles may comprise metal oxides, metal nitrides, metal carbides, metal borides, etc. The inert nano-sized particles may be a single compound, or may be a metallic material having a coating of a different material. In another embodiment of the present invention, a small quantity of at least one elemental metal that forms stable high melting intermetallic compound with tin is added to a solder ball. The added at least one elemental metal forms precipitates of intermetallic compounds with tin, which are dispersed as fine particles in the solder.

Abstract: One embodiment of the present invention is directed to an under bump metallurgy material. The under bump metallurgy material of this embodiment includes an adhesion layer and a conduction layer formed on top of the adhesion layer. The under bump metallurgy material of this embodiment also includes a barrier layer plated on top of the conduction layer and a sacrificial layer plated on top of the barrier layer. The conduction layer of this embodiment includes a trench formed therein, the trench contacting a portion of the barrier layer and blocking a path of intermetallic formation between the conduction layer and the sacrificial layer.

Abstract: One embodiment of the present invention is directed to an under bump metallurgy material. The under bump metallurgy material of this embodiment includes an adhesion layer and a conduction layer formed on top of the adhesion layer. The under bump metallurgy material of this embodiment also includes a barrier layer plated on top of the conduction layer and a sacrificial layer plated on top of the barrier layer. The conduction layer of this embodiment includes a trench formed therein, the trench contacting a portion of the barrier layer and blocking a path of intermetallic formation between the conduction layer and the sacrificial layer.

Abstract: A structure. The structure includes a layered configuration including a copper layer, a first layer, and a second layer. The first and second layers are disposed on opposite sides of the copper layer and are in direct mechanical contact with the copper layer. The first and second layers each include a same alloy of nickel and a metal consisting of cobalt, iron, copper, manganese, or molybdenum. A first region in the first layer extends completely through the first layer. A second region in the second layer extends completely through the second layer. A third region in the first layer extends completely through the first layer. The third region does not extend into any portion of the second layer. The first, second region, and third regions each include a photoresist or an opening such that photoresist or opening extends completely through the first, second, and first layer, respectively.

Abstract: An apparatus for providing uniform axial load distribution for laminate layers of multilayer ceramic chip carriers includes a base plate configured to support a plurality of green sheet layers thereon, the base plate having at least one resiliently mounted load support bar disposed adjacent outer edges of the base plate. The load support bar is mounted on one or more biasing members such that the top surface of the support bar extends above the top surface of the base plate by a selected distance.

Abstract: An apparatus for providing uniform axial load distribution for laminate layers of multilayer ceramic chip carriers includes a base plate configured to support a plurality of green sheet layers thereon, the base plate having at least one resiliently mounted load support bar disposed adjacent outer edges of the base plate. The load support bar is mounted on one or more biasing members such that the top surface of the support bar extends above the top surface of the base plate by a selected distance.

Abstract: An apparatus for providing uniform axial load distribution for laminate layers of multilayer ceramic chip carriers includes a base plate configured to support a plurality of green sheet layers thereon, the base plate having at least one resiliently mounted load support bar disposed adjacent outer edges of the base plate. The load support bar is mounted on one or more biasing members such that the top surface of the support bar extends above the top surface of the base plate by a selected distance.

Abstract: An apparatus for providing two-phase heat transfer for semiconductor devices includes a vapor chamber configured to carry a cooling liquid, the vapor chamber having a base section, and a plurality of three-dimensional (3D) shaped members. The plurality of 3D-shaped members have interior and exterior sidewalls, the 3D-shaped members being connected to the base section so that vapor carrying latent heat can reach the respective interior sidewalls and get transferred to the respective exterior sidewalls configured to be in contact with an external coolant. The vapor chamber is configured to be in contact with a semiconductor device in order to remove heat therefrom.

Abstract: An apparatus for providing two-phase heat transfer for semiconductor devices includes a vapor chamber configured to carry a cooling liquid, the vapor chamber having base section, and a plurality of three-dimensional (3D) shaped members. The plurality of 3D-shaped members have interior and exterior sidewalls, the 3D-shaped members being connected to the base section so that vapor carrying latent heat can reach the respective interior sidewalls and get transferred to the respective exterior sidewalls configured to be in contact with an external coolant. The vapor chamber is configured to be in contact with a semiconductor device in order to remove heat therefrom.

Abstract: A structure. The structure includes a layered configuration including a copper layer, a first layer, and a second layer. The first and second layers are disposed on opposite sides of the copper layer and are in direct mechanical contact with the copper layer. The first and second layers each include a same alloy of nickel and a metal consisting of cobalt, iron, copper, manganese, or molybdenum. A first region in the first layer extends completely through the first layer. A second region in the second layer extends completely through the second layer. A third region in the first layer extends completely through the first layer. The third region does not extend into any portion of the second layer. The first, second region, and third regions each include a photoresist or an opening such that photoresist or opening extends completely through the first, second, and first layer, respectively.

Abstract: An improved Land Grid Array interconnect structure is provided with the use of small metal bumps on the substrate electrical contact pad. The bumps interlock with segments of the fuzz button connection and increase the physical contact surface area between the contact pad and fuss button. The improved contact reduces displacement of electrical contact points due to thermo-mechanical stress and lowers the required actuation force during assembly.

Abstract: An apparatus for providing two-phase heat transfer for semiconductor devices includes a vapor chamber configured to carry a cooling liquid, the vapor chamber having base section, and a plurality of three-dimensional (3D) shaped members. The plurality of 3D-shaped members have interior and exterior sidewalls, the 3D-shaped members being connected to the base section so that vapor carrying latent heat can reach the respective interior sidewalls and get transferred to the respective exterior sidewalls configured to be in contact with an external coolant. The vapor chamber is configured to be in contact with a semiconductor device in order to remove heat therefrom.