Patents by Inventor Hsieh-Ping CHANG

Hsieh-Ping CHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • AMORPHOUS PHASE YTTRIUM-DOPED INDIUM ZINC OXIDE THIN FILM TRANSISTORS AND METHOD FOR MAKING SAME
    Publication number: 20140014943
    Abstract: Sol-gel-processed thin-film transistors (TFTs) with amorphours Y—In—Zn—O (YIZO) as an active layer are fabricated with various mole ratios of Y, which indicates that Y3+ could play the role of carrier suppressor in InZnO (IZO) systems and reduce off current of YIZO-TFT and its channel mobility, threshold voltage, subthreshold swing voltage, and on/off ratio.
    Type: Application
    Filed: July 16, 2012
    Publication date: January 16, 2014
    Applicant: NATIONAL CHUNG CHENG UNIVERSITY
    Inventors: Chu-Chi TING, Hsieh-Ping CHANG