Abstract: A numeric key-based Chinese-language inputting method, which enables the rapid inputting of a Chinese-language address in accordance with using numeric keys includes determining as to a numerical inputting mode, or a single Chinese character inputting mode, or an address inputting mode, and for a numerical inputting mode, processing in accordance with a numerical processing step, and for a single Chinese character inputting mode, processing in accordance with a single Chinese character processing step, and for an address inputting mode, and processing in accordance with an address data processing step. Thereafter, a Chinese-language address, made up of characters and numerals detected in accordance with each step, is outputted to a display portion for visual representation.

Abstract: A television program editing device includes an input portion for receiving input data, an identity verification portion for inspecting identity and authority of the editor, an internal data storage portion for storing data read from the external storage device, a data processing portion for processing data inquiries and changes, a changed data buffer portion for recording data revised by the editor, a data access portion communicated with the external storage device, and a display portion for exhibiting program guide data to the editor.

Abstract: Method for wet etching where proper arrangements of the substrates during the growth of the insulation layer is adopted. An insulation layer is prepared on the surface of a substrate at the area where thin film circuits are positioned. On the surfaces of the substrate where the thin film circuits are not positioned are prepared protective layers. During the wet etching the attack by the etchant may be avoided. The material of the insulation layer and the protection layer may be the same. The material of the protection layer may be the photo-resistant used in the wet etching process. The invention also disclosed circuit components prepared with the wet etching of this invention.

Abstract: An etchant recipe suitable for the photo-etching process of the CrSi metalized film in the patterning of electronic circuitry. The etchant comprises 100 to 120 parts of 36.5 to 38% HCl, 1.0 to 2.0 parts of 48.8 to 49.2% HF, 0 to 10 parts of 30.0 to 32.0% H.sub.2 O.sub.2 and 50 to 100 parts of 85 to 87% H.sub.3 PO.sub.4. A 0.1 g/100 cc wetting agent is optionally added.