Patents by Inventor Hsien-Feng LIAO
Hsien-Feng LIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230387103Abstract: A semiconductor structure is provided. At least one first well region is disposed in a semiconductor substrate and has a first conductivity type. At least one gate of a transistor is disposed over the first well region and extends in a first direction. At least one second well region and at least one third well region are disposed on opposite sides of the first well region and extend in the first direction. The second and third well regions have a second conductivity type. A first shielding structure is disposed on at least one end of the gate and partially overlaps the first well region in a vertical projection direction. The first shielding structure is separated from the end of the gate. A bulk ring is disposed in the semiconductor substrate and surrounds the gate, the second well region, the third well region, and the first shielding structure.Type: ApplicationFiled: May 27, 2022Publication date: November 30, 2023Applicant: Vanguard International Semiconductor CorporationInventors: Hsien-Feng LIAO, Jian-Hsing LEE, Chieh-Yao CHUANG, Ting-Yu CHANG, Yeh-Ning JOU, Shao-Chang HUANG, Kan-Sen CHEN, Nai-Lun CHENG, Ching-Yi HSU, Yu-Chen WU
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Patent number: 11811222Abstract: An electrostatic discharge (ESD) protection circuit including a detection circuit, a voltage-divider element, and a discharge element is provided. The detection circuit is coupled between a first power line and a second power line. In response to an ESD event, the detection circuit enables a turn-on signal. The voltage-divider element is coupled between the first power line and a third power line and receives the turn-on signal. The discharge element is coupled between the second and third power lines. In response to the turn-on signal being enabled, the first discharge element discharges an ESD current.Type: GrantFiled: December 16, 2021Date of Patent: November 7, 2023Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATIONInventors: Yeh-Ning Jou, Chieh-Yao Chuang, Hsien-Feng Liao, Ting-Yu Chang, Chih-Hsuan Lin, Chang-Min Lin, Shao-Chang Huang, Ching-Ho Li
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Publication number: 20230335546Abstract: An ESD protection circuit includes a buffer circuit, a driving circuit, and a power-clamping circuit. The buffer circuit includes first and second transistors having a first conductivity type coupled in a cascade configuration between a first node and a first power supply node. A bonding pad is coupled to the first node. The drive circuit determines a state of at least one of the first and second transistors according to a control voltage. The drive circuit includes a third transistor having a second conductivity type, which is coupled between a second power supply node and a gate of the first transistor and is controlled by the control signal. The power-clamping circuit is coupled to the bonding pad and a gate of the third transistor at a second node. The control voltage is generated at the second node and determined by a voltage at the bonding pad.Type: ApplicationFiled: April 14, 2022Publication date: October 19, 2023Applicant: Vanguard International Semiconductor CorporationInventors: Shao-Chang HUANG, Kai-Chieh HSU, Chi-Hung LO, Wei-Sung CHEN, Chieh-Yao CHUANG, Hsien-Feng LIAO, Yeh-Ning JOU
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Publication number: 20230198250Abstract: An electrostatic discharge (ESD) protection circuit including a detection circuit, a voltage-divider element, and a discharge element is provided. The detection circuit is coupled between a first power line and a second power line. In response to an ESD event, the detection circuit enables a turn-on signal. The voltage-divider element is coupled between the first power line and a third power line and receives the turn-on signal. The discharge element is coupled between the second and third power lines. In response to the turn-on signal being enabled, the first discharge element discharges an ESD current.Type: ApplicationFiled: December 16, 2021Publication date: June 22, 2023Applicant: Vanguard International Semiconductor CorporationInventors: Yeh-Ning JOU, Chieh-Yao CHUANG, Hsien-Feng LIAO, Ting-Yu CHANG, Chih-Hsuan LIN, Chang-Min LIN, Shao-Chang HUANG, Ching-Ho LI
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Patent number: 11569657Abstract: The protection circuit includes a detection circuit and a discharge circuit. The detection circuit is coupled to first and second power bonding pads and detects whether an ESD event or an EOS event occurs at the first power bonding pad. The detection circuit controls a detection voltage on a detection node according to a detection result. The first and second power bonding pads belong to different power domains. The discharge circuit is coupled to the detection node and the first power pad. In response to the ESD event occurring at the first power bonding pad, the discharge circuit provides a discharge path between the first power bonding pad and a ground terminal according to the detection voltage. In response to the EOS event occurring at the first power bonding pad, the detection circuit activates a second discharge path between the first power bonding pad and the ground terminal.Type: GrantFiled: November 4, 2021Date of Patent: January 31, 2023Assignee: Vanguard International Semiconductor CorporationInventors: Shao-Chang Huang, Ching-Ho Li, Hsien-Feng Liao, Chieh-Yao Chuang, Yeh-Ning Jou
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Patent number: 11545481Abstract: An electrostatic discharge protection device includes a first well region, a second well region, a first doped region, and a first heavily doped region. The first well region and the second well region are disposed in a semiconductor substrate. The first doped region is disposed in the first well region and the second well region. The first heavily doped region is disposed in the first doped region in the first well region. The first well region and the first doped region have a first conductivity type, and the second well region and the first heavily doped region have a second conductivity type that is the opposite of the first conductivity type.Type: GrantFiled: April 2, 2019Date of Patent: January 3, 2023Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATIONInventors: Yeh-Ning Jou, Hsien-Feng Liao, Jia-Rong Yeh
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Patent number: 11088541Abstract: An electrostatic discharge protection circuit is provided. The electrostatic discharge protection circuit includes an electrostatic discharge detection circuit, a discharge circuit, and a switch. The electrostatic discharge detection circuit detects whether an electrostatic discharge event occurs at the bounding pad to generate a first detection circuit. The discharge circuit receives the first detection signal. When the electrostatic discharge event occurs at the bounding pad, the discharge circuit provides a discharge path between the bounding pad and a ground terminal according to the first detection signal. The switch is coupled between the core circuit and the ground terminal and controlled by the first detection signal. When the electrostatic discharge event occurs at the bounding pad, the switch is turned off according to the first detection signal.Type: GrantFiled: September 7, 2018Date of Patent: August 10, 2021Assignee: Vanguard International Semiconductor CorporationInventors: Shao-Chang Huang, Jia-Rong Yeh, Yeh-Ning Jou, Hsien-Feng Liao, Yi-Han Wu, Chih-Cherng Liao, Chieh-Yao Chuang, Wei-Shung Chen, Ching-Wen Chen, Pang-Chuan Chen
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Publication number: 20200321328Abstract: An electrostatic discharge protection device includes a first well region, a second well region, a first doped region, and a first heavily doped region. The first well region and the second well region are disposed in a semiconductor substrate. The first doped region is disposed in the first well region and the second well region. The first heavily doped region is disposed in the first doped region in the first well region. The first well region and the first doped region have a first conductivity type, and the second well region and the first heavily doped region have a second conductivity type that is the opposite of the first conductivity type.Type: ApplicationFiled: April 2, 2019Publication date: October 8, 2020Applicant: Vanguard International Semiconductor CorporationInventors: Yeh-Ning JOU, Hsien-Feng LIAO, Jia-Rong YEH
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Publication number: 20200083704Abstract: An electrostatic discharge protection circuit is provided. The electrostatic discharge protection circuit includes an electrostatic discharge detection circuit, a discharge circuit, and a switch. The electrostatic discharge detection circuit detects whether an electrostatic discharge event occurs at the bounding pad to generate a first detection circuit. The discharge circuit receives the first detection signal. When the electrostatic discharge event occurs at the bounding pad, the discharge circuit provides a discharge path between the bounding pad and a ground terminal according to the first detection signal. The switch is coupled between the core circuit and the ground terminal and controlled by the first detection signal. When the electrostatic discharge event occurs at the bounding pad, the switch is turned off according to the first detection signal.Type: ApplicationFiled: September 7, 2018Publication date: March 12, 2020Applicant: Vanguard International Semiconductor CorporationInventors: Shao-Chang HUANG, Jia-Rong YEH, Yeh-Ning JOU, Hsien-Feng LIAO, Yi-Han WU, Chih-Cherng LIAO, Chieh-Yao CHUANG, Wei-Shung CHEN, Ching-Wen CHEN, Pang-Chuan CHEN