Patents by Inventor Hsien-Hsin Lin

Hsien-Hsin Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12354882
    Abstract: A semiconductor structure is provided. The semiconductor structure includes an insulator layer, first and second field-effect transistor devices, an isolation field-effect transistor device, front-side gate and back-side gate contacts. Each of the first and second field-effect transistor devices and the isolation field-effect transistor device includes a fin structure and first and second epitaxial source/drain structures. The fin structure includes channel layers and a gate structure that is wrapped around the channel layers. The first and second epitaxial source/drain structures are connected to opposite sides of the channel layers. The isolation field-effect transistor device is kept in the off-state. The front-side gate contact is formed on the first field-effect transistor device and electrically connected to the gate structure of the first field-effect transistor device.
    Type: Grant
    Filed: December 19, 2022
    Date of Patent: July 8, 2025
    Assignee: MEDIATEK INC.
    Inventors: Po-Chao Tsao, Hsien-Hsin Lin
  • Patent number: 12191226
    Abstract: A semiconductor device and method for forming same. According to an embodiment. The method provides a base substrate, forms a heat dissipation substrate on the base substrate, wherein a thermal conductivity of the heat dissipation substrate is between 200 Wm?1K?1 and 1200 Wm?1K?1. This method further forms a device layer on the heat dissipation substrate, wherein the device layer comprises a transistor. The method further removes the base substrate.
    Type: Grant
    Filed: January 17, 2023
    Date of Patent: January 7, 2025
    Assignees: MEDIATEK INC., NATIONAL TAIWAN UNIVERSITY
    Inventors: Ming-Tzong Yang, Hsien-Hsin Lin, Wen-Kai Wan, Chia-Che Chung, Chee-Wee Liu
  • Publication number: 20230223465
    Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a fin structure and an epitaxial source/drain structure. The substrate includes a substrate layer and an insulator layer on the substrate layer. The fin structure is formed over the substrate, wherein the fin structure includes a gate structure and channel layers wrapped by the gate structure. The epitaxial source/drain structure is connected to the channel layers, wherein a bottom portion of the epitaxial source/drain structure is in contact with the insulator layer of the substrate.
    Type: Application
    Filed: December 12, 2022
    Publication date: July 13, 2023
    Inventors: Po-Chao TSAO, Hsien-Hsin LIN
  • Publication number: 20230223276
    Abstract: A semiconductor structure is provided. The semiconductor structure includes an insulator layer, first and second field-effect transistor devices, an isolation field-effect transistor device, front-side gate and back-side gate contacts. Each of the first and second field-effect transistor devices and the isolation field-effect transistor device includes a fin structure and first and second epitaxial source/drain structures. The fin structure includes channel layers and a gate structure that is wrapped around the channel layers. The first and second epitaxial source/drain structures are connected to opposite sides of the channel layers. The isolation field-effect transistor device is kept in the off-state. The front-side gate contact is formed on the first field-effect transistor device and electrically connected to the gate structure of the first field-effect transistor device.
    Type: Application
    Filed: December 19, 2022
    Publication date: July 13, 2023
    Inventors: Po-Chao TSAO, Hsien-Hsin LIN
  • Publication number: 20230154824
    Abstract: A semiconductor device and method for forming same. According to an embodiment. The method provides a base substrate, forms a heat dissipation substrate on the base substrate, wherein a thermal conductivity of the heat dissipation substrate is between 200 Wm?1K?1and 1200 Wm?1K?1. This method further forms a device layer on the heat dissipation substrate, wherein the device layer comprises a transistor. The method further removes the base substrate.
    Type: Application
    Filed: January 17, 2023
    Publication date: May 18, 2023
    Inventors: Ming-Tzong YANG, Hsien-Hsin LIN, Wen-Kai WAN, Chia-Che CHUNG, Chee-Wee LIU
  • Patent number: 11587846
    Abstract: A semiconductor device includes a heat dissipation substrate and a device layer. The thermal conductivity of the heat dissipation substrate is greater than 200 Wm?1K?1 and the device layer is disposed on the heat dissipation substrate. The device layer includes a transistor. A method of forming a semiconductor device includes providing a base substrate, forming a heat dissipation substrate on the base substrate, wherein a thermal conductivity of the heat dissipation substrate is greater than 200 Wm?1K?1. The method further includes forming a device layer on the heat dissipation substrate, wherein the device layer comprises a transistor. The method further includes removing the base substrate.
    Type: Grant
    Filed: December 24, 2020
    Date of Patent: February 21, 2023
    Assignees: MEDIATEK INC.
    Inventors: Ming-Tzong Yang, Hsien-Hsin Lin, Wen-Kai Wan, Chia-Che Chung, Chee-Wee Liu
  • Publication number: 20220352346
    Abstract: A method includes etching a trench in a substrate adjacent to a gate structure, wherein the trench includes a bottom surface and a tip portion extending under a spacer of the gate structure. The method further includes epitaxially growing a first semiconductor material in the trench, wherein the first semiconductor material covers an entirety of the bottom surface of the trench, and the first semiconductor material grows in the tip portion. The method further includes epitaxially growing a second semiconductor material in the trench, wherein the second semiconductor material is different from the first semiconductor material, the second semiconductor material covers the first semiconductor material, and the second semiconductor material directly contacts the substrate between the bottom surface of the trench and the tip portion.
    Type: Application
    Filed: July 13, 2022
    Publication date: November 3, 2022
    Inventors: Tsz-Mei KWOK, Hsueh-Chang SUNG, Kuan-Yu CHEN, Hsien-Hsin LIN
  • Patent number: 11411098
    Abstract: A device includes a substrate and a gate structure over the substrate. The device further includes source/drain (S/D) features in the substrate. At least one of the S/D features is located in a trench. The at least one S/D feature includes a first semiconductor material covering an entirety of a bottom surface of the trench. The at least one S/D feature further includes a second semiconductor material over the first semiconductor material. The at least one S/D feature further includes a third semiconductor material over the second semiconductor material. The second semiconductor material has a composition different from the first semiconductor material and the third semiconductor material. The first semiconductor material includes physically discontinuous portions directly contacting the substrate. The second semiconductor material surrounds the third semiconductor material.
    Type: Grant
    Filed: March 2, 2018
    Date of Patent: August 9, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tsz-Mei Kwok, Hsueh-Chang Sung, Kuan-Yu Chen, Hsien-Hsin Lin
  • Publication number: 20220059429
    Abstract: A semiconductor device includes a heat dissipation substrate and a device layer. The thermal conductivity of the heat dissipation substrate is greater than 200 Wm?1K?1and the device layer is disposed on the heat dissipation substrate. The device layer includes a transistor.
    Type: Application
    Filed: December 24, 2020
    Publication date: February 24, 2022
    Inventors: Ming-Tzong Yang, Hsien-Hsin Lin, Wen-Kai Wan, Chia-Che Chung, Chee-Wee Liu
  • Patent number: 10957589
    Abstract: A method for forming a self-aligned contact includes providing a substrate with a plurality of gate structures including spacers on opposite sides. The method also includes forming a sacrificial layer between the gate structures. The method also includes forming a mask layer on a part of the sacrificial layer. The method also includes forming a plurality of first openings by removing the sacrificial layer exposed from the mask layer. The method also includes forming a dielectric layer in the plurality of first openings. The method also includes removing the mask layer. The method also includes forming a plurality of second openings by removing the sacrificial layer that remains on the substrate. The method also includes forming a plurality of first contact plugs in the second openings.
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: March 23, 2021
    Assignee: MediaTek Inc.
    Inventor: Hsien-Hsin Lin
  • Patent number: 10741469
    Abstract: The invention provides a semiconductor device. The semiconductor device includes a gate structure over fin structures arranged in parallel. Each of the fin structures has a drain portion and a source portion on opposite sides of the gate structure. A drain contact structure is positioned over the drain portions of the fin structures. A source contact structure is positioned over the source portions of the fin structures. A first amount of drain via structures is electrically connected to the drain contact structure. A second amount of source via structures is electrically connected to the source contact structure. The sum of the first amount and the second amount is greater than or equal to 2, and the sum of the first amount and the second amount is less than or equal to two times the amount of fin structures.
    Type: Grant
    Filed: November 1, 2017
    Date of Patent: August 11, 2020
    Assignee: MEDIATEK INC.
    Inventors: Hsien-Hsin Lin, Ming-Tzong Yang, Wen-Kai Wan
  • Publication number: 20190164830
    Abstract: A method for forming a self-aligned contact includes providing a substrate with a plurality of gate structures including spacers on opposite sides. The method also includes forming a sacrificial layer between the gate structures. The method also includes forming a mask layer on a part of the sacrificial layer. The method also includes forming a plurality of first openings by removing the sacrificial layer exposed from the mask layer. The method also includes forming a dielectric layer in the plurality of first openings. The method also includes removing the mask layer. The method also includes forming a plurality of second openings by removing the sacrificial layer that remains on the substrate. The method also includes forming a plurality of first contact plugs in the second openings.
    Type: Application
    Filed: October 30, 2018
    Publication date: May 30, 2019
    Applicant: MediaTek Inc.
    Inventor: Hsien-Hsin Lin
  • Publication number: 20180190788
    Abstract: A device includes a substrate and a gate structure over the substrate. The device further includes source/drain (S/D) features in the substrate. At least one of the S/D features is located in a trench. The at least one S/D feature includes a first semiconductor material covering an entirety of a bottom surface of the trench. The at least one S/D feature further includes a second semiconductor material over the first semiconductor material. The at least one S/D feature further includes a third semiconductor material over the second semiconductor material. The second semiconductor material has a composition different from the first semiconductor material and the third semiconductor material. The first semiconductor material includes physically discontinuous portions directly contacting the substrate. The second semiconductor material surrounds the third semiconductor material.
    Type: Application
    Filed: March 2, 2018
    Publication date: July 5, 2018
    Inventors: Tsz-Mei KWOK, Hsueh-Chang SUNG, Kuan-Yu CHEN, Hsien-Hsin LIN
  • Publication number: 20180138104
    Abstract: The invention provides a semiconductor device. The semiconductor device includes a gate structure over fin structures arranged in parallel. Each of the fin structures has a drain portion and a source portion on opposite sides of the gate structure. A drain contact structure is positioned over the drain portions of the fin structures. A source contact structure is positioned over the source portions of the fin structures. A first amount of drain via structures is electrically connected to the drain contact structure. A second amount of source via structures is electrically connected to the source contact structure. The sum of the first amount and the second amount is greater than or equal to 2, and the sum of the first amount and the second amount is less than or equal to two times the amount of fin structures.
    Type: Application
    Filed: November 1, 2017
    Publication date: May 17, 2018
    Inventors: Hsien-Hsin LIN, Ming-Tzong YANG, Wen-Kai WAN
  • Patent number: 9911826
    Abstract: A device includes a substrate, a gate structure over the substrate, and source/drain (S/D) features in the substrate and interposed by the gate structure. At least one of the S/D features includes a first semiconductor material, a second semiconductor material over the first semiconductor material, and a third semiconductor material over the second semiconductor material. The second semiconductor material has a composition different from the first semiconductor material and the third semiconductor material. The first semiconductor material includes physically discontinuous portions.
    Type: Grant
    Filed: April 17, 2014
    Date of Patent: March 6, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tsz-Mei Kwok, Hsueh-Chang Sung, Kuan-Yu Chen, Hsien-Hsin Lin
  • Patent number: 9842910
    Abstract: In a method, a gate structure is formed over a substrate, and source/drain (S/D) features are formed in the substrate and interposed by the gate structure. At least one of the S/D features is formed by forming a first semiconductor material including physically discontinuous portions, forming a second semiconductor material over the first semiconductor material, and forming a third semiconductor material over the second semiconductor material. The second semiconductor material has a composition different from a composition of the first semiconductor material. The third semiconductor material has a composition different from the composition of the second semiconductor material.
    Type: Grant
    Filed: June 26, 2014
    Date of Patent: December 12, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tsz-Mei Kwok, Hsueh-Chang Sung, Kuan-Yu Chen, Hsien-Hsin Lin
  • Patent number: 9666691
    Abstract: A method of forming an integrated circuit structure includes providing a wafer including a substrate and a semiconductor fin at a major surface of the substrate, and performing a deposition step to epitaxially grow an epitaxy layer on a top surface and sidewalls of the semiconductor fin, wherein the epitaxy layer includes a semiconductor material. An etch step is then performed to remove a portion of the epitaxy layer, with a remaining portion of the epitaxy layer remaining on the top surface and the sidewalls of the semiconductor fin.
    Type: Grant
    Filed: September 10, 2012
    Date of Patent: May 30, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Chang Su, Tsz-Mei Kwok, Hsien-Hsin Lin, Hsueh-Chang Sung, Yi-Fang Pai, Kuan-Yu Chen
  • Patent number: 9564509
    Abstract: A method of fabricating an integrated circuit device includes forming a first gate structure in a first region of a substrate and a second gate structure in a second region of the substrate. The method includes forming a protective layer overlying the first and the second gate structures. The method includes removing a portion of the protective layer over the second gate structure. The method includes forming features adjacent to the second gate structure. The method further includes forming a spacer over at least a portion of the features adjacent to the second gate structure, wherein the features separate the spacer from the substrate adjacent to the second gate structure. The method includes removing the second portion of the protective layer. Removing the second portion of the protective layer includes forming a protector over the second gate structure; and performing an etching process using a chemical comprising hydrofluoric acid (HF).
    Type: Grant
    Filed: November 25, 2014
    Date of Patent: February 7, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ming-Hsi Yeh, Hsien-Hsin Lin, Ying-Hsueh Chang Chien, Yi-Fang Pai, Chi-Ming Yang, Chin-Hsiang Lin
  • Patent number: 9537004
    Abstract: A system and method for forming semiconductor structures is disclosed. An embodiment comprises forming a high diffusibility layer adjacent to a gate stack and forming a low diffusibility layer adjacent to the high diffusibility layer. After these two layers are formed, an anneal is performed to diffuse dopants from the high diffusibility layer underneath the gate stack to help form a channel region.
    Type: Grant
    Filed: May 24, 2011
    Date of Patent: January 3, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chii-Ming Wu, Chien-Chang Su, Hsien-Hsin Lin, Yi-Fang Pai
  • Patent number: 9515187
    Abstract: An integrated circuit structure includes a fin field-effect transistor (FinFET) including a semiconductor fin over and adjacent to insulation regions; and a source/drain region over the insulation regions. The source/drain region includes a first and a second semiconductor region. The first semiconductor region includes silicon and an element selected from the group consisting of germanium and carbon, wherein the element has a first atomic percentage in the first semiconductor region. The first semiconductor region has an up-slant facet and a down-slant facet. The second semiconductor region includes silicon and the element. The element has a second atomic percentage lower than the first atomic percentage. The second semiconductor region has a first portion on the up-slant facet and has a first thickness. A second portion of the second semiconductor region, if any, on the down-slant facet has a second thickness smaller than the first thickness.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: December 6, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsz-Mei Kwok, Chien-Chang Su, Kuan-Yu Chen, Hsueh-Chang Sung, Hsien-Hsin Lin