Abstract: A package structure includes a first die, a second die, an insulation structure, a through via, a dielectric layer and a redistribution layer. The second die is electrically bonded to the first die. The insulation structure is disposed on the first die and laterally surrounds the second die. The through via penetrates through the insulation structure to electrically connect to the first die. The through via includes a first barrier layer and a conductive post on the first barrier layer. The dielectric layer is on the second die and the insulation structure. The redistribution layer is embedded in the dielectric layer and electrically connected to the through via. The redistribution layer includes a second barrier layer and a conductive layer on the second barrier layer. The conductive layer of the redistribution layer is in contact with the conductive post of the through via.

Abstract: A semiconductor structure including a first semiconductor die, a second semiconductor die, a passivation layer, an anti-arcing pattern, and conductive terminals is provided. The second semiconductor die is stacked over the first semiconductor die. The passivation layer covers the second semiconductor die and includes first openings for revealing pads of the second semiconductor die. The anti-arcing pattern is disposed over the passivation layer. The conductive terminals are disposed over and electrically connected to the pads of the second semiconductor die.

Abstract: Provided is a semiconductor package structure including a first die having a first bonding structure thereon, a second die having a second bonding structure thereon, a metal circuit structure, and a first protective structure. The second die is bonded to the first die such that a first bonding dielectric layer of the first bonding structure contacts a second bonding dielectric layer of the second bonding structure. The metal circuit structure is disposed over a top surface of the second die. The first protective structure is disposed within the top surface of the second die, and sandwiched between the metal circuit structure and the second die.

Abstract: A manufacturing method of a semiconductor structure includes at least the following steps. Forming a first portion includes forming a first patterned conductive pad with a first through hole on a first interconnect structure over a first semiconductor substrate; patterning a dielectric material over the first interconnect structure to form a first patterned dielectric layer with a first opening that passes through a portion of the dielectric material formed inside the first through hole to accessibly expose the first interconnect structure; and forming a conductive material inside the first opening and in contact with the first interconnect structure to form a first conductive connector laterally isolated from the first patterned conductive pad by the first patterned dielectric layer. A singulation process is performed to cut off the first patterned dielectric layer, the first interconnect structure, and the first semiconductor substrate to form a continuous sidewall of a semiconductor structure.

Abstract: Integrated circuit devices and method of manufacturing the same are disclosed. An integrated circuit device includes an interconnect structure on a substrate, a passivation layer on the interconnect structure, a plurality of conductive pads on the passivation layer and a through interconnect via (TIV). The interconnect structure includes a plurality of dielectric layers and an interconnect in the plurality of dielectric layers. The plurality of conductive pads includes a first conductive pad electrically connecting the interconnect. The through interconnect via extends through the plurality of dielectric layers and electrically connecting a first conductive layer of the interconnect.

Abstract: Provided is a semiconductor structure including a substrate, an interconnect structure, a pad, a protective layer, and a bonding structure. The interconnect structure is disposed over the substrate. The pad is disposed over and electrically connected to the interconnect structure. A top surface of the pad has a probe mark and the probe mark has a concave surface. The protective layer conformally covers the top surface of the pad and the probe mark. The bonding structure is disposed over the protective layer. The bonding structure includes a bonding dielectric layer and a first bonding metal layer penetrating the bonding dielectric layer and the protective layer to electrically connect to the pad. A method of manufacturing the semiconductor structure is also provided.

Abstract: A method includes forming a passivation layer over a portion of a metal pad, forming a polymer layer over the passivation layer, and exposing the polymer layer using a photolithography mask. The photolithography mask has an opaque portion, a transparent portion, and a partial transparent portion. The exposed polymer layer is developed to form an opening, wherein the metal pad is exposed through the opening. A Post-Passivation Interconnect (PPI) is formed over the polymer layer, wherein the PPI includes a portion extending into the opening to connect to the metal pad.

Abstract: A method for programming a memory device is provided. The memory device includes first to fourth memory cells, in which the first and second memory cells share a first erase gate, and the third and fourth memory cells share a second erase gate. The method includes applying a first voltage to control gates of the first and third memory cell; applying a second voltage to control gates of the second and fourth memory cells, in which the first voltage is higher than the second voltage; applying a third voltage to a select gate of the first memory cell; and applying a fourth voltage to select gates of the second to fourth memory cell, in which the third voltage is higher than the fourth voltage.

Abstract: Semiconductor packages and methods of forming the same are disclosed. One of the methods includes the following steps. A first die is provided, wherein the first die comprises a first substrate, a first interconnect structure over the first substrate, and a first pad disposed over and electrically connected to the first interconnect structure. A first bonding dielectric layer is formed over the first die to cover the first die. By using a single damascene process, a first bonding via penetrating the first bonding dielectric layer is formed, to electrically connect the first interconnect structure.

Abstract: Provided is a semiconductor structure including a substrate, an interconnect structure, a pad, a protective layer, and a bonding structure. The interconnect structure is disposed over the substrate. The pad is disposed over and electrically connected to the interconnect structure. A top surface of the pad has a probe mark and the probe mark has a concave surface. The protective layer conformally covers the top surface of the pad and the probe mark. The bonding structure is disposed over the protective layer. The bonding structure includes a bonding dielectric layer and a first bonding metal layer penetrating the bonding dielectric layer and the protective layer to electrically connect to the pad. A method of manufacturing the semiconductor structure is also provided.

Abstract: Provided is a three-dimensional integrated circuit (3DIC) structure including a die stack structure, a metal circuit structure, and a protective structure. The die stack structure includes a first die and a second die face-to-face bonded together. The second die includes a plurality of through-substrate vias (TSVs). The metal circuit structure is disposed over a back side of the second die. The protective structure is sandwiched between and in contact with a bottom surface of the metal circuit structure and a top surface of one of the plurality of TSVs of the second die.

Abstract: A semiconductor structure and the manufacturing method thereof are provided. A semiconductor structure includes a first semiconductor substrate, a first interconnect structure, a first conductive pad, a first dielectric layer, and a first conductive connector. The first semiconductor substrate includes a plurality of first semiconductor devices therein. The first interconnect structure is disposed over the first semiconductor substrate and electrically coupled to the first semiconductor devices. The first conductive pad is disposed over and electrically coupled to the first interconnect structure. The first dielectric layer covers the first conductive pad and the first interconnect structure, and the first dielectric layer includes a portion extending through the first conductive pad. The first conductive connector is disposed on and electrically coupled to the first interconnect structure, and the first conductive connector extends through the portion of the first dielectric layer.

Abstract: A semiconductor structure and the manufacturing method thereof are provided. A semiconductor structure includes a first semiconductor substrate, a first interconnect structure, a first conductive pad, a first dielectric layer, and a first conductive connector. The first semiconductor substrate includes a plurality of first semiconductor devices therein. The first interconnect structure is disposed over the first semiconductor substrate and electrically coupled to the first semiconductor devices. The first conductive pad is disposed over and electrically coupled to the first interconnect structure. The first dielectric layer covers the first conductive pad and the first interconnect structure, and the first dielectric layer includes a portion extending through the first conductive pad. The first conductive connector is disposed on and electrically coupled to the first interconnect structure, and the first conductive connector extends through the portion of the first dielectric layer.

Abstract: An integrated circuit includes a bottom substrate, a metal layer disposed over the bottom substrate and a hollow metal pillar disposed on the metal layer. The metal layer and the hollow metal pillar are electrically connected.

Abstract: A needle-free connection device include a casing, a connection base, a slide element and a resilient valve. The casing includes a first hollow tube having a first liquid transmission channel. The connection base is connected to the casing. The resilient valve includes a second hollow tube and a plug connected thereto, wherein the second hollow tube has a second liquid transmission channel, a third liquid transmission channel is formed between the second hollow tube and the plug, and a fourth liquid transmission channel is formed between the connection base and the plug. The first to the fourth liquid transmission channel are intercommunicated with each other. The connection base includes a third hollow tube, and a fourth liquid transmission channel is formed between the plug and the third hollow tube. The needle-free connection device provides a liquid transmission path sequentially passing through the first to the fourth liquid transmission channel.

Abstract: Methods and apparatus are disclosed for manufacturing metal contacts under ground-up contact pads within a device. A device may comprise a bottom metal layer with a bottom metal contact, a top metal layer with a top metal contact, and a plurality of middle metal layers. Any given metal layer of the plurality of middle metal layers comprises a metal contact, the metal contact is substantially vertically below the top metal contact, substantially vertically above the bottom metal contact, and substantially vertically above a metal contact in any metal layer that is below the given metal layer. The metal contacts may be of various and different shapes. All the metal contacts in the plurality of middle metal layers and the bottom metal contact may be smaller than the top metal contact, therefore occupying less area and saving more area for other functions such as device routing.

Abstract: Methods and apparatus are disclosed for manufacturing metal contacts under ground-up contact pads within a device. A device may comprise a bottom metal layer with a bottom metal contact, a top metal layer with a top metal contact, and a plurality of middle metal layers. Any given metal layer of the plurality of middle metal layers comprises a metal contact, the metal contact is substantially vertically below the top metal contact, substantially vertically above the bottom metal contact, and substantially vertically above a metal contact in any metal layer that is below the given metal layer. The metal contacts may be of various and different shapes. All the metal contacts in the plurality of middle metal layers and the bottom metal contact may be smaller than the top metal contact, therefore occupying less area and saving more area for other functions such as device routing.

Abstract: Provided is a three-dimensional integrated circuit (3DIC) structure including a die stack structure, a metal circuit structure, and a protective structure. The die stack structure includes a first die and a second die face-to-face bonded together. The second die includes a plurality of through-substrate vias (TSVs). The metal circuit structure is disposed over a back side of the second die. The protective structure is sandwiched between and in contact with a bottom surface of the metal circuit structure and a top surface of one of the plurality of TSVs of the second die.

Abstract: Provided is a three-dimensional integrated circuit (3DIC) structure including a die stack structure, a metal circuit structure, and a protective structure. The die stack structure includes a first die and a second die face-to-face bonded together. The metal circuit structure is disposed over a back side of the second die. The protective structure is disposed within the back side of the second die and separates one of a plurality of through-substrate vias (TSVs) of the second die from the metal circuit structure.

Abstract: Provided is a three-dimensional integrated circuit (3DIC) structure including a die stack structure, a metal circuit structure, and a protective structure. The die stack structure includes a first die and a second die face-to-face bonded together. The metal circuit structure is disposed over a back side of the second die. The protective structure is disposed within the back side of the second die and separates one of a plurality of through-substrate vias (TSVs) of the second die from the metal circuit structure.