Abstract: A projection system and a control method thereof are provided. The projection system includes a projector. The projector comprises a projection module and a processor. The processor is electrically coupled to the projection module. The projector confirms whether a first triggering event is detected and turns on a sleep aid mode in response to the first triggering event. The sleep aid mode corresponds to at least one control parameter. In the sleep aid mode, the projection module plays at least one multimedia file according to the at least one control parameter. The processor adjusts at least one parameter value of the at least one control parameter to adjust the at least one multimedia file correspondingly. The projector confirms whether a second triggering event is detected and the projection module stops playing the at least one multimedia file and turns off the sleep aid mode in response to the second triggering event.

Abstract: A semiconductor die package includes an inductor-capacitor (LC) semiconductor die that is directly bonded with a logic semiconductor die. The LC semiconductor die includes inductors and capacitors that are integrated into a single die. The inductors and capacitors of the LC semiconductor die may be electrically connected with transistors and other logic components on the logic semiconductor die to form a voltage regulator circuit of the semiconductor die package. The integration of passive components (e.g., the inductors and capacitors) of the voltage regulator circuit into a single semiconductor die reduces signal propagation distances in the voltage regulator circuit, which may increase the operating efficiency of the voltage regulator circuit, may reduce the formfactor for the semiconductor die package, may reduce parasitic capacitance and/or may reduce parasitic inductance in the voltage regulator circuit (thereby improving the performance of the voltage regulator circuit), among other examples.

Abstract: A semiconductor die package includes a high dielectric constant (high-k) dielectric layer over a device region of a first semiconductor die that is bonded with a second semiconductor die in a wafer on wafer (WoW) configuration. A through silicon via (TSV) structure may be formed through the device region. The high-k dielectric layer has an intrinsic negative charge polarity that provides a coupling voltage to modify the electric potential in the device region. In particular, the electron carriers in high-k dielectric layer attracts hole charge carriers in device region, which suppresses trap-assist tunnels that result from surface defects formed during etching of the recess for the TSV structure. Accordingly, the high-k dielectric layer described herein reduces the likelihood of (and/or the magnitude of) current leakage in semiconductor devices that are included in the device region of the first semiconductor die.

Abstract: The present invention provides a vehicle light emitting assembly, the vehicle light emitting assembly includes a plurality of light guide plates, each light guide plate includes a light emitting surface, the plurality of light guide plates being combined into a hollow pyramidal structure and the hollow pyramidal structure having a polygonal bottom surface shape, a shell structure disposed outside the hollow pyramidal structure, and the shell structure disposed on an outer surface of a vehicle, and at least one light source element disposed at one terminal of the hollow pyramidal structures. The developed vehicle light emitting assembly emits uniform light to enhance the visual effects, and has the advantages of easy production.

Abstract: A mask for defining a guard ring pattern. The mask includes a transparent substrate, a light-shielding layer, and at least one pair of assisted line patterns. The light-shielding layer is disposed on the transparent substrate and has a rectangular ring pattern composed of a plurality of opening patterns to define the guard ring pattern. The pair of assisted line patterns is parallelized by a predetermined interval on both sides of at least one section of the rectangular ring and have a predetermined width. Moreover, a method for defining a guard ring pattern is disclosed. First, a semiconductor substrate covered by an energy sensitive layer is provided. Next, photolithography is performed on the energy sensitive layer using the mask to transfer the guard ring pattern inside.

Abstract: A mask for defining a guard ring pattern. The mask includes a transparent substrate, a light-shielding layer, and at least one pair of assisted line patterns. The light-shielding layer is disposed on the transparent substrate and has a rectangular ring pattern composed of a plurality of opening patterns to define the guard ring pattern. The pair of assisted line patterns is parallelized by a predetermined interval on both sides of at least one section of the rectangular ring and have a predetermined width. Moreover, a method for defining a guard ring pattern is disclosed. First, a semiconductor substrate covered by an energy sensitive layer is provided. Next, photolithography is performed on the energy sensitive layer using the mask to transfer the guard ring pattern inside.