Abstract: A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.

Abstract: A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.

Abstract: A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.

Abstract: A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.

Abstract: A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.

Abstract: A high electron mobility transistor includes a III-V compound layer, a nitride layer, a source electrode, a drain electrode, a gate electrode, a surface plasma treatment region, and at least one moat. The nitride layer is disposed on the III-V compound layer. The source and the drain electrodes are disposed above the III-V compound layer. The gate electrode is disposed above the nitride layer. The moat is at least partially disposed in the nitride layer and between the source and the drain electrodes. The surface plasma treatment region is at least partially disposed in the nitride layer. The surface plasma treatment region is at least partially disposed at a top surface of the nitride layer between the moat and the drain electrode, a top surface of the nitride layer between the moat and the source electrode, and/or a top surface of the nitride layer under the moat.

Abstract: A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.

Abstract: A nitride semiconductor device is disclosed. A substrate is provided. A nitride semiconductor layer is disposed on the substrate. An AlN anode dielectric layer is disposed on the nitride semiconductor layer. An anode metal layer is disposed on the AlN anode dielectric layer. A fluorinated region is disposed in the AlN anode dielectric layer. The fluorinated region extends into the nitride semiconductor layer.

Abstract: A high electron mobility transistor includes a channel layer, a nitride layer, a source electrode, a drain electrode, a gate electrode, a fluorinated region, and a surface plasma treatment region. The nitride layer is disposed on the channel layer. The source electrode and the drain electrode are disposed above the channel layer. The gate electrode is disposed above the nitride layer and at least partially disposed between the source electrode and the drain electrode in a first direction. The fluorinated region is disposed in the nitride layer. The surface plasma treatment region is at least partially disposed at a top surface of the nitride layer located between the source electrode and the drain electrode. The surface plasma treatment region is separated from the fluorinated region or a fluorine concentration of the surface plasma treatment region is different from a fluorine concentration of the fluorinated region.

Abstract: A high electron mobility transistor includes a III-V compound layer, a nitride layer, a source electrode, a drain electrode, a gate electrode, a surface plasma treatment region, and at least one moat. The nitride layer is disposed on the III-V compound layer. The source and the drain electrodes are disposed above the III-V compound layer. The gate electrode is disposed above the nitride layer. The moat is at least partially disposed in the nitride layer and between the source and the drain electrodes. The surface plasma treatment region is at least partially disposed in the nitride layer. The surface plasma treatment region is at least partially disposed at a top surface of the nitride layer between the moat and the drain electrode, a top surface of the nitride layer between the moat and the source electrode, and/or a top surface of the nitride layer under the moat.

Abstract: A high electron mobility transistor includes a first III-V compound layer, a second III-V compound layer, a source electrode, a drain electrode, a gate electrode, a first moat, and a second moat. The second III-V compound layer is disposed on the first III-V compound layer. The source electrode and the drain electrodes are disposed above the first III-V compound layer. The gate electrode is disposed above the second III-V compound layer located between the source and the drain electrodes in a first direction. The second III-V compound layer includes a first region under the gate electrode. The first moat is at least partially disposed between the first region and the source electrode in the first direction. The second moat is at least partially disposed between the first region and the drain electrode in the first direction.

Abstract: A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming a source/drain feature over a substrate, forming a dielectric layer over the source/drain feature, forming a contact trench through the dielectric layer to expose the source/drain feature, depositing a titanium nitride (TiN) layer by a first atomic layer deposition (ALD) process in the contact trench and depositing a cobalt layer over the TiN layer in the contact trench.

Abstract: An integrated sputtering method and reactor for copper or aluminum seed layers in which a plasma sputter reactor initially deposits a thin conformal layer onto a substrate including a high-aspect ratio hole subject to the formation of overhangs. After the seed deposition, the same sputter reactor is used to sputter etch the substrate with energetic light ions, especially helium, having an energy sufficiently low that it selectively etches the metallization to the heavier underlying barrier layer, for example, copper over tantalum or aluminum over titanium. An RF inductive coil generates the plasma during the sputtering etching while the target power is turned off. A final copper flash step deposits copper over the bare barrier field region before copper is electrochemically plated to fill the hole. The invention also includes a simultaneous sputter deposition and sputter etch, and an energetic ion processing of the copper seed sidewall.

Abstract: An integrated sputtering method and reactor for copper or aluminum seed layers in which a plasma sputter reactor initially deposits a thin conformal layer onto a substrate including a high-aspect ratio hole subject to the formation of overhangs. After the seed deposition, the same sputter reactor is used to sputter etch the substrate with energetic light ions, especially helium, having an energy sufficiently low that it selectively etches the metallization to the heavier underlying barrier layer, for example, copper over tantalum or aluminum over titanium. An RF inductive coil generates the plasma during the sputtering etching while the target power is turned off. A final copper flash step deposits copper over the bare barrier field region before copper is electrochemically plated to fill the hole. The invention also includes a simultaneous sputter deposition and sputter etch, and an energetic ion processing of the copper seed sidewall.

Abstract: A lift mechanism for and a corresponding use of a magnetron in a plasma sputter reactor. A magnetron rotating about the target axis is controllably lifted away from the back of the target to compensate for sputter erosion, thereby maintaining a constant magnetic field and resultant plasma density at the sputtered surface, which is particularly important for stable operation with a small magnetron, for example, one executing circular or planetary motion about the target axis. The lift mechanism can include a lead screw axially fixed to the magnetron support shaft and a lead nut engaged therewith to raise the magnetron as the lead nut is turned. Alternatively, the support shaft is axially fixed to a vertically moving slider. The amount of lift may be controlled according a recipe based on accumulated power applied to the target or by monitoring electrical characteristics of the target.