Patents by Inventor Hsien-Pin Hu

Hsien-Pin Hu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220102288
    Abstract: A semiconductor device includes a circuit substrate, a semiconductor package, and a metallic cover. The semiconductor package is disposed on the circuit substrate. The metallic cover is disposed over the semiconductor package and over the circuit substrate. The metallic cover comprises a cap and outer flanges. The cap overlies the semiconductor package. The outer flanges are disposed at edges of the cap, are connected with the cap, and extend towards the circuit substrate. A region of the bottom surface of the cap has a curved profile matching a warpage profile of the semiconductor package and the circuit substrate, and the region having the curved profile extends over the semiconductor package.
    Type: Application
    Filed: September 25, 2020
    Publication date: March 31, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wensen Hung, Hsuan-Ning Shih, Hsien-Pin Hu, Tsung-Shu Lin, Tsung-Yu Chen, Wen-Hsin Wei
  • Publication number: 20210375769
    Abstract: A package structure and method for forming the same are provided. The package structure includes a first through via structure formed in a substrate and a semiconductor die formed below the first through via structure. The package structure further includes a conductive structure formed in a passivation layer over the substrate. The conductive structure includes a first via portion and a second via portion, the first via portion is directly over the first through via structure, and there is no conductive material directly below and in direct contact with the second via portion.
    Type: Application
    Filed: August 9, 2021
    Publication date: December 2, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Kai CHENG, Tsung-Shu LIN, Tsung-Yu CHEN, Hsien-Pin HU, Wen-Hsin WEI
  • Publication number: 20210366814
    Abstract: A semiconductor structure includes a first interposer; a second interposer laterally adjacent to the first interposer, where the second interposer is spaced apart from the first interposer; and a first die attached to a first side of the first interposer and attached to a first side of the second interposer, where the first side of the first interposer and the first side of the second interposer face the first die.
    Type: Application
    Filed: May 22, 2020
    Publication date: November 25, 2021
    Inventors: Shang-Yun Hou, Hsien-Pin Hu, Sao-Ling Chiu, Wen-Hsin Wei, Ping-Kang Huang, Chih-Ta Shen, Szu-Wei Lu, Ying-Ching Shih, Wen-Chih Chiou, Chi-Hsi Wu, Chen-Hua Yu
  • Patent number: 11183399
    Abstract: An interposer substrate is manufactured with a scribe line between adjacent regions. In an embodiment a separate exposure reticle is utilized to pattern the scribe line. The exposure reticle to pattern the scribe line will create an exposure region which overlaps and overhangs the exposure regions utilized to form adjacent regions.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: November 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Hsin Wei, Hsien-Pin Hu, Shang-Yun Hou, Chi-Hsi Wu, Chen-Hua Yu, Wen-Jung Chuang, Chun-Che Chen, Jhih-Ming Lin, Chih-Ching Lin, Shih-Wen Huang, Chun Hua Chang, Tsung-Yang Hsieh
  • Patent number: 11169207
    Abstract: A device includes a test pad on a chip. A first microbump has a first surface area that is less than a surface area of the test pad. A first conductive path couples the test pad to the first microbump. A second microbump has a second surface area that is less than the surface area of the test pad. A second conductive path couples the test pad to the second microbump.
    Type: Grant
    Filed: May 8, 2020
    Date of Patent: November 9, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Cheng Wu, Hsien-Pin Hu, Shang-Yun Hou, Shin-Puu Jeng, Chen-Hua Yu, Chao-Hsiang Yang
  • Publication number: 20210343619
    Abstract: A packaged semiconductor device and a method and apparatus for forming the same are disclosed. In an embodiment, a method includes bonding a device die to a first surface of a substrate; depositing an adhesive on the first surface of the substrate; depositing a thermal interface material on a surface of the device die opposite the substrate; placing a lid over the device die and the substrate, the lid contacting the adhesive and the thermal interface material; applying a clamping force to the lid and the substrate; and while applying the clamping force, curing the adhesive and the thermal interface material.
    Type: Application
    Filed: July 12, 2021
    Publication date: November 4, 2021
    Inventors: Wensen Hung, Tsung-Yu Chen, Tsung-Shu Lin, Chen-Hsiang Lao, Wen-Hsin Wei, Hsien-Pin Hu
  • Publication number: 20210327778
    Abstract: An embodiment is a method including: attaching a first die to a first side of a first component using first electrical connectors, attaching a first side of a second die to first side of the first component using second electrical connectors, attaching a dummy die to the first side of the first component in a scribe line region of the first component, adhering a cover structure to a second side of the second die, and singulating the first component and the dummy die to form a package structure.
    Type: Application
    Filed: June 29, 2021
    Publication date: October 21, 2021
    Inventors: Chen-Hua Yu, Wen-Hsin Wei, Chi-Hsi Wu, Shang-Yun Hou, Jing-Cheng Lin, Hsien-Pin Hu, Ying-Ching Shih, Szu-Wei Lu
  • Publication number: 20210320097
    Abstract: An integrated circuit package and a method of forming the same are provided. The method includes attaching an integrated circuit die to a first substrate. A dummy die is formed. The dummy die is attached to the first substrate adjacent the integrated circuit die. An encapsulant is formed over the first substrate and surrounding the dummy die and the integrated circuit die. The encapsulant, the dummy die and the integrated circuit die are planarized, a topmost surface of the encapsulant being substantially level with a topmost surface of the dummy die and a topmost surface of the integrated circuit die. An interior portion of the dummy die is removed. A remaining portion of the dummy die forms an annular structure.
    Type: Application
    Filed: June 23, 2021
    Publication date: October 14, 2021
    Inventors: Shang-Yun Hou, Sung-Hui Huang, Kuan-Yu Huang, Hsien-Pin Hu, Yushun Lin, Heh-Chang Huang, Hsing-Kuo Hsia, Chih-Chieh Hung, Ying-Ching Shih, Chin-Fu Kao, Wen-Hsin Wei, Li-Chung Kuo, Chi-Hsi Wu, Chen-Hua Yu
  • Publication number: 20210313196
    Abstract: Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a semiconductor device comprising an interconnecting structure consisting of a plurality of thin film layers and a plurality of metal layers disposed therein, each of the plurality of metal layers having substantially a same top surface area, and a die comprising an active surface and a backside surface opposite the active surface, the active surface being directly coupled to a first side of the interconnecting structure. The semiconductor device further comprises a first connector directly coupled to a second side of the interconnecting structure, the second side being opposite the first side.
    Type: Application
    Filed: June 21, 2021
    Publication date: October 7, 2021
    Inventors: Tzu-Wei Chiu, Cheng-Hsien Hsieh, Hsien-Pin Hu, Kuo-Ching Hsu, Shang-Yun Hou, Shin-Puu Jeng
  • Patent number: 11101140
    Abstract: An interposer substrate is manufactured with a scribe line between adjacent regions. In an embodiment a separate exposure reticle is utilized to pattern the scribe line. The exposure reticle to pattern the scribe line will create an exposure region which overlaps and overhangs the exposure regions utilized to form adjacent regions.
    Type: Grant
    Filed: August 1, 2018
    Date of Patent: August 24, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Hsin Wei, Hsien-Pin Hu, Shang-Yun Hou, Chi-Hsi Wu, Chen-Hua Yu, Wen-Jung Chuang, Chun-Che Chen, Jhih-Ming Lin, Chih-Ching Lin, Shih-Wen Huang, Chun Hua Chang, Tsung-Yang Hsieh
  • Patent number: 11101260
    Abstract: An integrated circuit package and a method of forming the same are provided. The method includes attaching an integrated circuit die to a first substrate. A dummy die is formed. The dummy die is attached to the first substrate adjacent the integrated circuit die. An encapsulant is formed over the first substrate and surrounding the dummy die and the integrated circuit die. The encapsulant, the dummy die and the integrated circuit die are planarized, a topmost surface of the encapsulant being substantially level with a topmost surface of the dummy die and a topmost surface of the integrated circuit die. An interior portion of the dummy die is removed. A remaining portion of the dummy die forms an annular structure.
    Type: Grant
    Filed: August 1, 2018
    Date of Patent: August 24, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shang-Yun Hou, Sung-Hui Huang, Kuan-Yu Huang, Hsien-Pin Hu, Yushun Lin, Heh-Chang Huang, Hsing-Kuo Hsia, Chih-Chieh Hung, Ying-Ching Shih, Chin-Fu Kao, Wen-Hsin Wei, Li-Chung Kuo, Chi-Hsi Wu, Chen-Hua Yu
  • Patent number: 11088079
    Abstract: A package structure includes a first through via structure formed in a substrate and a semiconductor die formed below the first through via structure. The package structure further includes a conductive structure formed in a passivation layer over the substrate. The conductive structure includes a first via portion and a second via portion, the first via portion is directly over the first through via structure, and there is no conductive material directly below and in direct contact with the second via portion.
    Type: Grant
    Filed: June 27, 2019
    Date of Patent: August 10, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Kai Cheng, Tsung-Shu Lin, Tsung-Yu Chen, Hsien-Pin Hu, Wen-Hsin Wei
  • Publication number: 20210242173
    Abstract: A semiconductor device and a method of forming the device are provided. The semiconductor device includes a first die having a first plurality of contact pads and a second die having a second plurality of contact pads. A substrate is bonded to a first contact pad of the first plurality of contact pads and a first contact pad of the second plurality of contact pads in a face-to-face orientation with the first die and the second die. A first through via extends through the substrate. Molding material is interposed between the first die, the second die and the substrate, the molding material extending along sidewalls of the first die, the second die, and the substrate. A second through via is positioned over a second contact pad of the first plurality of contact pads, the second through via extending through the molding material.
    Type: Application
    Filed: April 19, 2021
    Publication date: August 5, 2021
    Inventors: Wei-Ming Chen, Hsien-Pin Hu, Shang-Yun Hou, Wen-Hsin Wei
  • Patent number: 11069657
    Abstract: Structures and formation methods of a chip package are provided. The chip package includes a substrate, a first chip stack attached to the substrate, and a second chip stack attached to the substrate. The first chip stack and the second chip stack being attached to a same side of the substrate. The chip package further includes a molding compound layer surrounding the first chip stack and the second chip stack. The molding compound layer covers a topmost surface of the first chip stack. A topmost surface of the molding compound layer is substantially coplanar with a topmost surface of the second chip stack.
    Type: Grant
    Filed: January 13, 2020
    Date of Patent: July 20, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Hsin Wei, Hsien-Pin Hu, Shang-Yun Hou
  • Patent number: 11069539
    Abstract: Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a semiconductor device comprising an interconnecting structure consisting of a plurality of thin film layers and a plurality of metal layers disposed therein, each of the plurality of metal layers having substantially a same top surface area, and a die comprising an active surface and a backside surface opposite the active surface, the active surface being directly coupled to a first side of the interconnecting structure. The semiconductor device further comprises a first connector directly coupled to a second side of the interconnecting structure, the second side being opposite the first side.
    Type: Grant
    Filed: April 30, 2020
    Date of Patent: July 20, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tzu-Wei Chiu, Cheng-Hsien Hsieh, Hsien-Pin Hu, Kuo-Ching Hsu, Shang-Yun Hou, Shin-Puu Jeng
  • Patent number: 11062971
    Abstract: A packaged semiconductor device and a method and apparatus for forming the same are disclosed. In an embodiment, a method includes bonding a device die to a first surface of a substrate; depositing an adhesive on the first surface of the substrate; depositing a thermal interface material on a surface of the device die opposite the substrate; placing a lid over the device die and the substrate, the lid contacting the adhesive and the thermal interface material; applying a clamping force to the lid and the substrate; and while applying the clamping force, curing the adhesive and the thermal interface material.
    Type: Grant
    Filed: April 1, 2019
    Date of Patent: July 13, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wensen Hung, Tsung-Yu Chen, Tsung-Shu Lin, Chen-Hsiang Lao, Wen-Hsin Wei, Hsien-Pin Hu
  • Publication number: 20210167018
    Abstract: A device includes an interposer, which includes a substrate having a top surface. An interconnect structure is formed over the top surface of the substrate, wherein the interconnect structure includes at least one dielectric layer, and metal features in the at least one dielectric layer. A plurality of through-substrate vias (TSVs) is in the substrate and electrically coupled to the interconnect structure. A first die is over and bonded onto the interposer. A second die is bonded onto the interposer, wherein the second die is under the interconnect structure.
    Type: Application
    Filed: February 16, 2021
    Publication date: June 3, 2021
    Inventors: Hsien-Pin Hu, Chen-Hua Yu, Ming-Fa Chen, Jing-Cheng Lin, Jiun Ren Lai, Yung-Chi Lin
  • Patent number: 10985137
    Abstract: A semiconductor device, and a method of forming the device, are provided. The semiconductor device includes a first die having a first plurality of contact pads and a second die having a second plurality of contact pads. A substrate is bonded to a first contact pad of the first plurality of contact pads and a first contact pad of the second plurality of contact pads in a face-to-face orientation with the first die and the second die. A first through via extends through the substrate. Molding material is interposed between the first die, the second die and the substrate, the molding material extending along sidewalls of the first die, the second die, and the substrate. A second through via is positioned over a second contact pad of the first plurality of contact pads, the second through via extending through the molding material.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: April 20, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Ming Chen, Hsien-Pin Hu, Shang-Yun Hou, Wen Hsin Wei
  • Patent number: 10964667
    Abstract: A semiconductor device, and a method of forming the device, are provided. The semiconductor device includes a first die having a first plurality of contact pads and a second die having a second plurality of contact pads. A substrate is bonded to a first contact pad of the first plurality of contact pads and a first contact pad of the second plurality of contact pads in a face-to-face orientation with the first die and the second die. A first through via extends through the substrate. Molding material is interposed between the first die, the second die and the substrate, the molding material extending along sidewalls of the first die, the second die, and the substrate. A second through via is positioned over a second contact pad of the first plurality of contact pads, the second through via extending through the molding material.
    Type: Grant
    Filed: September 12, 2019
    Date of Patent: March 30, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Ming Chen, Hsien-Pin Hu, Shang-Yun Hou, Wen-Hsin Wei
  • Publication number: 20210066151
    Abstract: A package structure includes a circuit substrate, a semiconductor package, a lid structure, a passive device and a barrier structure. The semiconductor package is disposed on and electrically connected to the circuit substrate. The lid structure is disposed on the circuit substrate covering the semiconductor package. The lid structure is attached to the circuit substrate through an adhesive material. The passive device is disposed on the circuit substrate in between the semiconductor package and the lid structure. The barrier structure is separating the passive device from the lid structure and the adhesive material, and the barrier structure is in contact with the adhesive material.
    Type: Application
    Filed: April 12, 2020
    Publication date: March 4, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsien-Pin Hu, Chin-Fu Kao, Li-Hui Cheng, Szu-Wei Lu, Wen-Hsin Wei, Chih-Chien Pan