Abstract: An integrated passive module comprises a ceramic substrate, a planar layer and a thin film laminate. At least one first passive component is embedded in ceramic substrate. The planar layer is disposed on the ceramic substrate. The thin film laminate comprises at least one second passive component and disposed on the planar layer. The thin film laminate is electrically connected to the first passive component. This disclosure also discloses a semiconductor device comprising an integrated passive module and at least one active component. The at least one active component is electrically connected to the first passive component and the second passive component.

Abstract: A method of electroplating conductive material on semiconductor wafers improves deposited film quality by providing greater control over the formation of the film grain structure. Better grain size control is achieved by applying a continuous DC plating current to the wafer which avoids sharp discontinuities in the current as the applied current is increased in successive stages during a plating cycle. Current discontinuities are avoided by gradually increasing the current in a ramp-like fashion between the successive plating stages.