Abstract: A microwave reactor includes a chamber, at least one microwave source, a sprayer and a vapor extractor. The chamber includes a containing space and a reacting space. The containing space is communicated with the reacting space and provided for containing a reactant. The microwave source is connected to one side wall of the reacting space of the chamber. The sprayer is communicated with the containing space of the chamber for turning the reactant into a mist and spraying the mist in the reacting space of the chamber. The vapor extractor is connected to the reacting space. When the water contained in the mist is gasified to produces a water vapor, the water vapor can be exhausted from the chamber by the vapor extractor.

Abstract: A microwave applicator includes a chamber, at least one microwave source, a stirrer and a cooling structure. The microwave source is disposed on one side of the chamber. The stirrer is disposed in the chamber, wherein the stirrer includes an axial member and a plurality of blades. Each of the blades is connected to the axial member, and the axial member and the blades are made of metal materials. The cooling structure is disposed in the chamber and includes at least one cooling tube for allowing a cooling liquid passing through the chamber.

Abstract: A measuring apparatus for electromagnetic property of material includes a chamber and a specified shielding piece. The chamber has a cavity inside and the chamber has an electromagnetic wave access terminal to connect to the cavity, used to receive an input electromagnetic wave and output a reflective electromagnetic wave. The specified shielding piece is disposed inside the cavity with respect to the electromagnetic wave access terminal, used to produce a region in side the cavity. The region is dominated by magnetic field and is used to adapt an object to be measured.

Abstract: A measuring apparatus for electromagnetic property of material includes a chamber and a specified shielding piece. The chamber has a cavity inside and the chamber has an electromagnetic wave access terminal to connect to the cavity, used to receive an input electromagnetic wave and output a reflective electromagnetic wave. The specified shielding piece is disposed inside the cavity with respect to the electromagnetic wave access terminal, used to produce a region in side the cavity. The region is dominated by magnetic field and is used to adapt an object to be measured.

Abstract: A multi-slot resonant microwave device comprises a plurality of slot microwave resonator units and at least one microwave emitting source. Each of the plurality of slot microwave resonator unit is defined as a slot resonant cavity. Whenever at least one of the microwave emitting sources emits microwave power into the plurality of slot microwave resonator units, the plurality of slot microwave resonator units resonate simultaneously, and produce an electromagnetic field with the same polarization direction. Therefore, the multi-slot resonator device can deal with large-area microwave heating with greater microwave effect to shorten operating time and accomplish the objective of homogeneous and megathermal microwave heating.

Abstract: A multi-slot resonant microwave device comprises a plurality of slot microwave resonator units and at least one microwave emitting source. Each of the plurality of slot microwave resonator unit is defined as a slot resonant cavity. Whenever at least one of the microwave emitting sources emits microwave power into the plurality of slot microwave resonator units, the plurality of slot microwave resonator units resonate simultaneously, and produce an electromagnetic field with the same polarization direction. Therefore, the multi-slot resonator device can deal with large-area microwave heating with greater microwave effect to shorten operating time and accomplish the objective of homogeneous and megathermal microwave heating.

Abstract: A method is developed to crystallize amorphous silicon (a-Si) thin films, in cold environment, by combining microwave-absorbing materials (MAM) and microwave irradiation. The MAM is set on top or around of the a-Si thin film. MAM composes of dielectric, magnetic, semiconductor, ferroelectric and carbonaceous material oxides, carbides, nitrides and borides, which will absorb and concentrate electric or magnetic field of the microwave. The microwave frequency is selected from 1 to 50 GHz, at a power density not less than 5 W/cm2. Temperature rise of the MAM is monitored and controlled by an optical pyrometer to be less than 600° C., and better be within 400-500° C. The application of MAM at patterned local areas leads to localized heating and crystallization of a-Si film right at the patterns to facilitate manufacture of semiconductor devices.