Abstract: A semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which is disposed in the matrix and adjacent to the circuit region. The crack stop trench is parallel with one side of the circuit region and filled with a composite material in a form of a grid to form a crack stop structure.

Abstract: A near field antenna adapted to an object detecting device, for sensing a plurality of units under test of at least an object under test. The near field antenna comprises a periodic guided-wave structure, a metallic reflection portion and at least two near field magnetic coupling antennas. The periodic guided-wave structure disposed below the object under test has a plurality of conductive units periodically arranged on a first plane. The metallic reflection portion is disposed under the periodic guided-wave structure to form an enclosed space. The near field magnetic coupling antennas are disposed on a second plane parallel to the periodic guided-wave structure, and are located in the enclosed space. The feed point and the ground point of each near field magnetic coupling antenna are fed by a coaxial cable with a feeding direction parallel to the periodically arranged conductive units.

Abstract: A near field antenna adapted to an object detecting device, for sensing a plurality of units under test of at least an object under test. The near field antenna comprises a periodic guided-wave structure, a metallic reflection portion and at least two near field magnetic coupling antennas. The periodic guided-wave structure disposed below the object under test has a plurality of conductive units periodically arranged on a first plane. The metallic reflection portion is disposed under the periodic guided-wave structure to form an enclosed space. The near field magnetic coupling antennas are disposed on a second plane parallel to the periodic guided-wave structure, and are located in the enclosed space. The feed point and the ground point of each near field magnetic coupling antenna are fed by a coaxial cable with a feeding direction parallel to the periodically arranged conductive units.

Abstract: A bookcase system is provided. The bookcase system includes at least adjacently arranged two bookcase units. Each of the bookcase units further includes a first RFID reader having an antenna and placed on a first lateral side of the bookcase unit. The bookcase unit further includes a separating structure placed between two of the adjacently arranged bookcase units. The separating structure may further include at least three metal plates forming a three-layer stacked structure, and a lateral side of each of the metal plates is larger than half of a wavelength of an operating frequency of the antenna. And books are placed along a direction parallel to the lateral side.

Abstract: A patch antenna includes an irradiation plate, a grounding point and a feeding point. The irradiation plate has a long edge. The grounding point is located at the long edge. The feeding point is located at the long edge. The grounding point and the feeding point are symmetrical with respect to a center of the long edge.

Abstract: An antenna system for mobile communication includes a transportation device and an antenna module installed on the transportation device. The antenna module has a first polarized antenna unit and a second polarized antenna unit. The polarized direction of first polarized antenna unit is perpendicular to the polarized direction of second polarized antenna unit, such that when the transportation device moves along a first direction, the first and the second polarized antenna units are coupling to each other, and each has an 8-shaped radiation pattern. The longitudinal direction of the radiation pattern of the first polarized antenna unit and the longitudinal direction of the radiation pattern of the second polarized antenna unit are parallel to a second direction, and the second direction is not parallel to the first direction. Thus, the instant disclosure provides the antenna system capable of restraining the multipath fading of mobile communication.

Abstract: A method for forming a trench MOS structure. First, a substrate, an epitaxial layer, a doping region and a doping well are provided. The substrate has a first conductivity type, a first side and a second side opposite to the first side. The epitaxial layer has the first conductivity type and is disposed on the first side. The doping well has a second conductivity type and is disposed on the epitaxial layer. The doping region has the first conductivity type and is disposed on the doping well. A gate trench penetrates the doping region and the doping well. The doping well is partially removed to form a bottom section of the gate trench. A gate isolation is formed to cover the inner wall of the bottom section and a top section of the gate trench. The gate trench is filled with a conductive material to form a trench gate.

Abstract: A semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which is disposed in the matrix and adjacent to the circuit region. The crack stop trench is parallel with one side of the circuit region and filled with a composite material in a form of a grid to form a crack stop structure.

Abstract: A vertical MOSFET electrostatic discharge device is disclosed, including a substrate comprising a plurality of trenches, a recessed gate disposed in each trench, a drain region disposed between each of the two neighboring recessed gates, an electrostatic discharge implant region disposed under each drain region, and a source region surrounding and disposed under the recessed gates and the electrostatic discharge implant regions.

Abstract: A motor includes a base, a rotor unit and a driving unit. The base has opposite first and second surfaces. The rotor unit includes a magnet unit disposed on a rotatable magnet carrier to face the first surface of the base. The driving unit includes induction coils disposed on a circuit board, a sensor unit that is disposed on the circuit board and spaced apart from the induction coils and that defines a first reference line with the rotation axis, and a rotor positioning component disposed on the second surface of the base, extending along a second reference line, and capable of magnet attraction with the magnet unit for positioning the rotor unit relative to the sensor unit when the rotor unit stops rotating.

Abstract: A motor includes a base, a rotor unit and a driving unit. The base has opposite first and second surfaces. The rotor unit includes a magnet unit disposed on a rotatable magnet carrier to face the first surface of the base. The driving unit includes a circuit board disposed between the base and the magnet unit, induction coils disposed on the circuit board and operatively associated with the magnet unit, a sensor unit disposed on the circuit board and spaced apart from the induction coils, and a rotor positioning component disposed on the second surface of the base and capable of magnet attraction with the magnet unit for positioning the rotor unit relative to the sensor unit when the rotor unit stops rotating.

Abstract: A process of forming a slit in a substrate is provided. A mask layer is formed on a substrate, wherein the mask layer does not include carbon. An etching process is performed to be substrate by using the mask layer as a mask, so as to form a slit in the substrate. The etching gas includes Cl2, CF4 and CHF3, a molar ratio of CF4 to CHF3 is about 0.5-0.8, and a molar ratio of F to Cl is about 0.4-0.8, for example. Further, the step of performing the etching process simultaneously removes the mask layer.

Abstract: A method for forming a trench MOS structure. First, a substrate, an epitaxial layer, a doping region and a doping well are provided. The substrate has a first conductivity type, a first side and a second side opposite to the first side. The epitaxial layer has the first conductivity type and is disposed on the first side. The doping well has a second conductivity type and is disposed on the epitaxial layer. The doping region has the first conductivity type and is disposed on the doping well. A gate trench penetrates the doping region and the doping well. The doping well is partially removed to form a bottom section of the gate trench. A gate isolation is formed to cover the inner wall of the bottom section and a top section of the gate trench. The gate trench is filled with a conductive material to form a trench gate.

Abstract: A semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which is disposed in the matrix and adjacent to the circuit region. The crack stop trench is parallel with one side of the circuit region and filled with a composite material in a form of a grid to form a crack stop structure.

Abstract: An embodiment is a molding chamber. The molding chamber comprises a mold-conforming chase, a substrate-base chase, a first radiation permissive component, and a microwave generator coupled to a first waveguide. The mold-conforming chase is over the substrate-base chase, and the mold-conforming chase is moveable in relation to the substrate-base chase. The first radiation permissive component is in one of the mold-conforming chase or the substrate-base chase. The microwave generator and the first waveguide are together operable to direct microwave radiation through the first radiation permissive component.

Abstract: An antenna system for mobile communication includes a transportation device and an antenna module installed on the transportation device. The antenna module has a first polarized antenna unit and a second polarized antenna unit. The polarized direction of first polarized antenna unit is perpendicular to the polarized direction of second polarized antenna unit, such that when the transportation device moves along a first direction, the first and the second polarized antenna units are coupling to each other, and each has an 8-shaped radiation pattern. The longitudinal direction of the radiation pattern of the first polarized antenna unit and the longitudinal direction of the radiation pattern of the second polarized antenna unit are parallel to a second direction, and the second direction is not parallel to the first direction. Thus, the instant disclosure provides the antenna system capable of restraining the multipath fading of mobile communication.

Abstract: A multi-antenna structure includes a base plate, a first antenna, a second antenna, a first metal line, and a second metal line. The base plate includes a grounded metal surface. The grounded metal surface includes two short sides and two long sides. The first antenna and the second antenna are arranged on the base plate. The first metal line and the second metal line are electrically connected to the two short sides of the grounded metal surface. A current path of the two short sides is prolonged because of the first metal line and the second metal line. A longitudinal current is equal to a transverse current at a low frequency. A current of the first antenna and a current of the second antenna does not interfere each other. Isolation between the first antenna and the second antenna is improved.

Abstract: A wafer scrubber is disclosed, including a chamber, and a holder connecting to a spindle disposed in the chamber, wherein the holder supports a wafer, and the wafer spins to remove water on the wafer, and a meshed inner cup comprising a plurality of through holes disposed between the holder and a wall of the chamber, wherein the meshed inner cup receives water from a surface of the wafer and rotates around the spindle to release the water through the through holes.

Abstract: A trench MOS structure is disclosed. The trench MOS structure includes a substrate, an epitaxial layer, a doping well, a doping region and a trench gate. The substrate has a first conductivity type, a first side and a second side opposite to the first side. The epitaxial layer has the first conductivity type and is disposed on the first side. The doping well has a second conductivity type and is disposed on the epitaxial layer. The doping region has the first conductivity type and is disposed on the doping well. The trench gate is partially disposed in the doping region. The trench gate has a bottle shaped profile with a top section smaller than a bottom section, both are partially disposed in the doping well. The bottom section of two adjacent trench gates results in a higher electrical field around the trench MOS structures.

Abstract: An embodiment integrated circuit structure includes a substrate, a metal pad over the substrate, a post-passivation interconnect (PPI) structure over the substrate and electronically connected to the metal pad, a first polymer layer over the PPI structure, an under bump metallurgy (UBM) extending into an opening in the first polymer layer and electronically connected to the PPI structure, and a barrier layer on a top surface of the first polymer layer adjacent to the UBM.