Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.

Abstract: A semiconductor device includes a tube-like structure comprising a plurality of dielectric layers and conductor layers that are disposed on top of one another; a conductor tip integrally formed with a cap conductor layer that is disposed on a top surface of the tube-like structure, wherein the conductor tip extends to a central hole of the tube-like structure; and at least one photodetector formed within a bottom portion of the tube-like structure.

Abstract: A semiconductor device includes a tube-like structure comprising a plurality of dielectric layers and conductor layers that are disposed on top of one another; a conductor tip integrally formed with a cap conductor layer that is disposed on a top surface of the tube-like structure, wherein the conductor tip extends to a central hole of the tube-like structure; and at least one photodetector formed within a bottom portion of the tube-like structure.

Abstract: A semiconductor device includes a tube-like structure comprising a plurality of dielectric layers and conductor layers that are disposed on top of one another; a conductor tip integrally formed with a cap conductor layer that is disposed on a top surface of the tube-like structure, wherein the conductor tip extends to a central hole of the tube-like structure; and at least one photodetector formed within a bottom portion of the tube-like structure.

Abstract: A semiconductor device includes a tube-like structure comprising a plurality of dielectric layers and conductor layers that are disposed on top of one another; a conductor tip integrally formed with a cap conductor layer that is disposed on a top surface of the tube-like structure, wherein the conductor tip extends to a central hole of the tube-like structure; and at least one photodetector formed within a bottom portion of the tube-like structure.

Abstract: A process for producing an aromatic aldehyde compound has steps of converting alkyl-substituted or non-substituted benzene into a compound of formula I by halomethylation, and allowing the compound of formula I and alkyl aldehyde to react in presence of phase transfer catalyst at a reaction temperature under alkaline condition to obtain the aromatic aldehyde compound.

Abstract: A process for producing an aromatic aldehyde compound has steps of converting alkyl-substituted or non-substituted benzene into a compound of formula I by halomethylation, and allowing the compound of formula I and alkyl aldehyde to react in presence of phase transfer catalyst at a reaction temperature under alkaline condition to obtain the aromatic aldehyde compound.

Abstract: Provided is a phase transfer catalyst for producing an aromatic aldehyde compound, comprising a compound of formula I, wherein R1 is hydrogen, methyl, ethyl, isopropyl, isobutyl or tertbutyl; R4, R5 and R6 are independently selected from alkyl groups containing 1 to 6 carbon atoms; and X is fluorine, chlorine, bromine or iodine.