Patents by Inventor Hsien Yu Lin

Hsien Yu Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8524583
    Abstract: A method for growing a semipolar nitride comprises steps: forming a plurality of parallel discrete trenches on a silicon substrate, each discrete trenches having a first wall and a second wall, wherein a tilt angle is formed between the surface of the silicon substrate and the first wall; forming a buffer layer on the silicon substrate and the trenches, wherein the buffer layer on the first wall has a plurality of growing zones and a plurality of non-growing zones among the growing zones and complementary to the growing zones; forming a cover layer on the buffer layer and revealing the growing zones; and growing a semipolar nitride from the growing zones of the buffer layer and covering the cover layer. Thereby cracks caused by thermal stress between the silicon substrate and semipolar nitride are decreased and the quality of the semipolar nitride film is improved.
    Type: Grant
    Filed: July 6, 2011
    Date of Patent: September 3, 2013
    Assignee: National Central University
    Inventors: Jen-Inn Chyi, Hsueh-Hsing Liu, Hsien Yu Lin
  • Publication number: 20120276722
    Abstract: A method for growing a semipolar nitride comprises steps: forming a plurality of parallel discrete trenches on a silicon substrate , each discrete trenches having a first wall and a second wall, wherein a tilt angle is formed between the surface of the silicon substrate and the first wall; forming a buffer layer on the silicon substrate and the trenches, wherein the buffer layer on the first wall has a plurality of growing zones and a plurality of non-growing zones among the growing zones and complementary to the growing zones; forming a cover layer on the buffer layer and revealing the growing zones; and growing a semipolar nitride from the growing zones of the buffer layer and covering the cover layer. Thereby cracks caused by thermal stress between the silicon substrate and semipolar nitride are decreased and the quality of the semipolar nitride film is improved.
    Type: Application
    Filed: July 6, 2011
    Publication date: November 1, 2012
    Inventors: Jen-Inn CHYI, Hsueh-Hsing Liu, Hsien Yu Lin
  • Publication number: 20040010939
    Abstract: A ventilation device is provided in a shoe. The device includes a porous member fitted in a receiving means in a rear of the insole, an intake pipe interconnected between a first check valve and the porous member, and a discharge pipe interconnected between a second check valve and porous member. Foul air is driven from porous member to the outside through the intake pipe and second check valve when the porous member is compressed by a foot. Conversely, fresh air is drawn into the porous member from the outside through the first check valve and intake pipe when the porous member is returned from the compressed state to an original state as the foot stops exerting force thereon.
    Type: Application
    Filed: June 11, 2003
    Publication date: January 22, 2004
    Inventors: Chang Yuen Liu, Ta Hsiang Lin, Hsien Yu Lin, Pei Chieh Liu