Abstract: The present disclosure provides a method and an apparatus for testing a semiconductor device. The method includes providing an active area in an integrated circuit design layout; grouping the active area into a plurality of regions, each of the regions including at least one polysilicon gate; calculating an operating temperature of the at least one polysilicon gate in each of the regions; calculating a self-heating temperature of each of the regions based on the operating temperature of the at least one polysilicon gate in each of the regions; determining an Electromigration (EM) evaluation based on the self-heating temperatures of the regions; and generating a semiconductor device based on the integrated circuit design layout passing the EM evaluation, wherein one of the regions includes a number of polysilicon gates disposed thereon different from the number of polysilicon gates disposed on the rest of regions.

Abstract: A system including computer readable storage media including executable instructions and one or more processors configured to execute the executable instructions to obtain a schematic netlist and a performance specification for an integrated circuit, determine electrical constraints for nets in the schematic netlist based on the performance specification, determine physical constraints from the electrical constraints, rout the nets in the schematic netlist based on the electrical constraints and the physical constraints, and provide a data file of a layout.

Abstract: A system for evaluating a heat sensitive structure of an integrated circuit design including a memory for retrieving and storing integrated circuit design layout data, thermal data, process data, and one or more operational parameters, a processor capable of accessing the memory and identifying a target region having a nominal temperature Tnom, a plurality of heat generating structures and/or heat dissipating structures having corresponding impact areas that encompass a portion of the target region, calculating the temperature increases and/or decreases in the target region as a result of thermal coupling between the target region and the heat generating structures and/or heat dissipating structures, and conducting one or more parametric evaluations of the target region at an adjusted evaluation temperature TE after which a network interface transmits the result(s) of the parametric evaluation(s) for use in a design review.

Abstract: An electromigration (EM) sign-off methodology that utilizes a system for analyzing an integrated circuit design layout to identify heat sensitive structures, self-heating effects, heat generating structures, and heat dissipating structures. The EM sign-off methodology includes a memory and a processor configured for calculating adjustments of an evaluation temperature for a heat sensitive structure by calculating the effects of self-heating within the temperature sensitive structure as well as additional heating and/or cooling as a function of thermal coupling to surrounding heat generating structures and/or heat dissipating elements located within a defined thermal coupling volume or range of the heat sensitive structures.

Abstract: A system including computer readable storage media including executable instructions and one or more processors configured to execute the executable instructions to obtain a schematic netlist and a performance specification for an integrated circuit, determine electrical constraints for nets in the schematic netlist based on the performance specification, determine physical constraints from the electrical constraints, rout the nets in the schematic netlist based on the electrical constraints and the physical constraints, and provide a data file of a layout.

Abstract: A semiconductor device includes a fin extending from a substrate and including a first fin end, a separation structure separating the first fin end from an adjacent fin end of another fin, a dummy gate spacer along sidewalls of the separation structure and the fin, a first epitaxial source/drain region in the fin and adjacent the separation structure, and a residue of a dummy gate material in a corner region between the dummy gate spacer and the first fin end. The first fin end protrudes from the dummy gate spacer into the separation structure. The residue of the dummy gate material separates the first epitaxial source/drain region from the separation structure and is triangle shaped.

Abstract: A system for evaluating a heat sensitive structure of an integrated circuit design including a memory for retrieving and storing integrated circuit design layout data, thermal data, process data, and one or more operational parameters, a processor capable of accessing the memory and identifying a target region having a nominal temperature Tnom, first and second heat generating structures within a first impact range of the target region, calculating the temperature increases ?Th1 and ?Th2 in the target region as a result of thermal coupling between the target region and the first and second heat generating structures, and conducting one or more parametric evaluations of the target region at an adjusted evaluation temperature TE=Tnom+?Th1+?Th1 after which a network interface transmits the result(s) of the parametric evaluation(s) for use in a design review.

Abstract: The present disclosure provides a method and a non-transitory computer-readable medium for arranging components within a semiconductor device. The method includes providing a plurality of electrical components in a pre-layout, generating a first layout by routing the plurality of electrical components, obtaining a first resistance between a power terminal of the first layout and a first terminal of a first electrical component in the first layout, comparing the first resistance and a first threshold, adjusting routing of the first layout such that the first resistance is less than the first threshold, and generating a tape out file for the semiconductor device according to the first layout.

Abstract: The present disclosure provides a method for evaluating a heat sensitive structure. The method includes identifying a heat sensitive structure in an integrated circuit design layout and identifying a heat generating structure in the integrated circuit design layout. The method also includes calculating an operating temperature of the heat generating structure by taking a practical current distribution into consideration. The method also includes calculating an anticipated temperature increase for the heat sensitive structure induced by thermal coupling of the heat generating structure at the operating temperature.

Abstract: An electromigration (EM) sign-off methodology that utilizes a system for analyzing an integrated circuit design layout to identify heat sensitive structures, self-heating effects, heat generating structures, and heat dissipating structures. The EM sign-off methodology includes a memory and a processor configured for calculating adjustments of an evaluation temperature for a heat sensitive structure by calculating the effects of self-heating within the temperature sensitive structure as well as additional heating and/or cooling as a function of thermal coupling to surrounding heat generating structures and/or heat dissipating elements located within a defined thermal coupling volume or range of the heat sensitive structures.

Abstract: A system for evaluating a heat sensitive structure of an integrated circuit design including a memory for retrieving and storing integrated circuit design layout data, thermal data, process data, and one or more operational parameters, a processor capable of accessing the memory and identifying a target region having a nominal temperature Tnom, first and second heat generating structures within a first impact range of the target region, calculating the temperature increases ?Th1 and ?Th2 in the target region as a result of thermal coupling between the target region and the first and second heat generating structures, and conducting one or more parametric evaluations of the target region at an adjusted evaluation temperature TE=Tnom+?Th1+?Th1 after which a network interface transmits the result(s) of the parametric evaluation(s) for use in a design review.

Abstract: The present disclosure provides a method and a non-transitory computer readable media for inter-metal dielectric reliability check. The method comprises: receiving an electronic layout, the electronic layout including a first plurality of electrical components in a first layer; determining an internal voltage difference within each electrical component in the first layer based on parasitic effect; generating a simulation voltage value for each electrical component in the first layer based on the internal voltage differences; and tagging a pair of electrical components in the first layer when a first voltage difference between the pair of electrical components exceeds a first voltage threshold. The first voltage difference is determined based on the simulation voltage value of each electrical component.

Abstract: The present disclosure provides a method and an apparatus for testing a semiconductor device. The method includes providing an active area in an integrated circuit design layout; grouping the active area into a first region and a second region; calculating a first self-heating temperature of the first region of the active area; calculating a second self-heating temperature of the second region of the active area; and determining an Electromigration (EM) evaluation based on the first self-heating temperature and the second self-heating temperature.

Abstract: An electromigration (EM) sign-off methodology that analyzes an integrated circuit design layout to identify heat sensitive structures, self-heating effects, heat generating structures, and heat dissipating structures. The EM sign-off methodology includes adjustments of an evaluation temperature for a heat sensitive structure by calculating the effects of self-heating within the temperature sensitive structure as well as additional heating and/or cooling as a function of thermal coupling to surrounding heat generating structures and/or heat sink elements located within a defined thermal coupling volume or range.

Abstract: The present disclosure provides a method and an apparatus for testing a semiconductor device. The method includes providing an active area in an integrated circuit design layout; grouping the active area into a first region and a second region; calculating a first self-heating temperature of the first region of the active area; calculating a second self-heating temperature of the second region of the active area; and determining an Electromigration (EM) evaluation based on the first self-heating temperature and the second self-heating temperature.

Abstract: A method for evaluating a heat sensitive structure involving identifying a heat sensitive structure in an integrated circuit design layout, the heat sensitive structure characterized by a nominal temperature, identifying a heat generating structure within a thermal coupling range of the heat sensitive structure, calculating an operating temperature of the first heat generating structure; calculating a temperature increase or the heat sensitive structure induced by thermal coupling to the heat generating structure at the operating temperature; and performing an electromigration (EM) analysis of the heat sensitive structure at an evaluation temperature obtained by adjusting the nominal temperature by the temperature increase induced by the heat generating structure.

Abstract: A system including computer readable storage media including executable instructions and one or more processors configured to execute the executable instructions to obtain a schematic netlist and a performance specification for an integrated circuit, determine electrical constraints for nets in the schematic netlist based on the performance specification, determine physical constraints from the electrical constraints, rout the nets in the schematic netlist based on the electrical constraints and the physical constraints, and provide a data file of a layout.

Abstract: The present disclosure provides a method and an apparatus for testing a semiconductor device. The method includes providing an active area in an integrated circuit design layout; grouping the active area into a first region and a second region; calculating a first self-heating temperature of the first region of the active area; calculating a second self-heating temperature of the second region of the active area; and determining an Electromigration (EM) evaluation based on the first self-heating temperature and the second self-heating temperature.

Abstract: An electromigration (EM) sign-off methodology that analyzes an integrated circuit design layout to identify heat sensitive structures, self-heating effects, heat generating structures, and heat dissipating structures. The EM sign-off methodology includes adjustments of an evaluation temperature for a heat sensitive structure by calculating the effects of self-heating within the temperature sensitive structure as well as additional heating and/or cooling as a function of thermal coupling to surrounding heat generating structures and/or heat sink elements located within a defined thermal coupling volume or range.

Abstract: A method includes conducting an electromigration (EM) check process on a schematic design, conducting a mitigating process to mitigate one or more electromigration violations identified during conducting the EM check process, and generating a layout design of the schematic design after at least one iteration of a design process including the EM check process and the mitigating process. The EM check process includes selecting at least some circuits in the schematic design as selected circuits for electromigration check, and checking electromigration compliance in the selected circuits. The mitigating process includes one of modifying some circuit layout of the selected circuits, modifying the schematic design, or modifying both the schematic design and some circuit layout of the selected circuits.