Abstract: A negative electrode and a battery employing the same are provided. The negative electrode includes a negative electrode active layer and a protective layer. The protective layer is disposed on the negative electrode active layer, wherein the protective layer includes a nanopowder and a binder. The nanopowder has a specific surface area of 30 m2/g to 1,000 m2/g. The nanopowder has a binding energy less than or equal to ?2.5 eV. The weight ratio of the nanopowder to the binder is from 51:49 to 99:1. The nanopowder is a compound having a structure represented by Formula (I) MiXj??Formula (I) wherein M is Al, Mg, Zr, Zn, or Si, and X is O or N; i is 1, 2 or 3, and j is 1, 2, 3 or 4.

Abstract: A touchpad assembly comprises a cover plate, a touch printed circuit board, a force-supporting component, a plurality of vibration isolators, and a plurality of strain gauges. The touch printed circuit board comprises a first region, a second region that surrounds the first region, a first surface, and a second surface, wherein the first surface and the second surface face toward and away from the cover plate respectively. The force-supporting component is disposed between the cover plate and the first surface. The vibration isolators are disposed on the second surface and located in the second region. The Young's modulus of the vibration isolators is in a range of 150 kPa to 800 kPa. The strain gauges are disposed on the touch printed circuit board. Each of the strain gauges extends from the second region to the first region.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: An electrically tunable liquid crystal lens includes a carrier substrate, a common electrode layer disposed on the carrier substrate, a liquid crystal unit, a patterned electrode layer, a terminal electrode layer, a dielectric insulating layer, and a cover. The liquid crystal unit is disposed on the common electrode layer opposite to the carrier substrate, and includes a plurality of liquid crystal molecules. The patterned electrode layer is disposed on the liquid crystal unit opposite to the common electrode layer, and has a plurality of aperture patterns located within a projection of the liquid crystal unit on the patterned electrode layer. The terminal electrode layer is disposed on the patterned electrode layer opposite to the liquid crystal unit. The dielectric insulating layer is disposed between the patterned electrode layer and the terminal electrode layer. The cover is disposed on the terminal electrode layer opposite to the dielectric insulating layer.

Abstract: A diagnostic system applied to an electronic equipment with a plurality of hardware devices is provided. The hardware devices include a display and a processor, the diagnostic system is executed by the processor to diagnose the hardware devices. The diagnostic system includes a diagnostic test interface, which is displayed on the display and includes a plurality of hardware items corresponding to the hardware devices. Each of the hardware items links to the hardware devices. When at least one of the hardware items is triggered, the processor executes the diagnostic item of the hardware device corresponding to the triggered hardware item.

Abstract: An electrostatic discharge protection circuit is provided. The electrostatic discharge protection circuit includes first, second, and third transistors and a discharge circuit. The first transistor has a first gate, a first drain coupled to the bonding pad, and a first source coupled to a first node. The second transistor has a second gate coupled to a power terminal, a second drain coupled to the first gate, and a second source coupled to a ground. The third transistor has a third gate coupled to the power terminal, a third drain coupled to the first node, and a third source coupled to the ground. The discharge circuit is controlled by a driving voltage at the first node. In response to an electrostatic discharge event occurring on the bonding pad, the discharge circuit provides a discharge path between the bonding pad and the ground according to the driving voltage.

Abstract: A light guide plate including a light emitting surface, a bottom surface, a light incident surface, multiple protrusion structures, and multiple grooves is provided. The light incident surface is connected between the light emitting surface and the bottom surface. The protrusion structures are disposed along a first direction and extend toward a second direction. The protrusion structures have a light condensing angle along the first direction, and the light condensing angle ranges from 10 degrees to 40 degrees. The grooves are disposed in the protrusion structures of the light guide plate. The grooves extend toward the first direction. The protrusion structures have a light receiving surface that defines each groove and is closer to the light incident surface. An angle between the light receiving surface and the bottom surface ranges from 35 degrees to 65 degrees. A display apparatus adopting the light guide plate is also provided.

Abstract: A non-volatile memory device includes at least one memory cell, and the memory cell includes a substrate, an assist gate structure, a tunneling dielectric layer, a floating gate, and an upper gate structure. The assist gate structure is disposed on the substrate. The floating gate includes two opposite first top edges arranged along a first direction, two opposite first sidewalls arranged along the first direction, and two opposite second sidewalls arranged along a second direction different from the first direction. The upper gate structure covers the assist gate structure and the floating gate, where at least one of the first top edges of the floating gate is embedded in the upper gate structure. Portions of the upper gate structure extend beyond the second sidewalls of the floating gate in the second direction, and the portions of the upper gate structure are disposed above the substrate.

Abstract: A non-volatile memory device includes at least one memory cell and the memory cell includes a substrate, a select gate, a control gate, a floating gate, and an erase gate. The select gate is disposed on the substrate, and the control gate is disposed on the substrate and laterally spaced apart from the select gate. The control gate comprises a non-vertical surface. The floating gate includes a vertical portion and a horizontal portion. The vertical portion disposed between the select gate and the control gate and includes a first top tip laterally spaced apart from the control gate. The horizontal portion is disposed between the substrate and the control gate, where the horizontal portion includes a lateral tip laterally and vertically spaced apart from the control gate. The erase gate covers the non-vertical surface of the control gate and the lateral tip of the horizontal portion of the floating gate.

Abstract: A non-volatile memory device includes a memory cell including a substrate, a select gate, a control gate, a planar floating gate, a coupling dielectric layer, an erase gate dielectric layer, and an erase gate. The select gate and the control gate are disposed on the substrate and laterally spaced apart from each other, and the control gate includes a non-vertical surface. The planar floating gate includes a lateral tip laterally spaced apart from the control gate. The coupling dielectric layer includes a first thickness (T1). The erase gate dielectric layer covers the non-vertical surface of the control gate and the lateral tip of the planar floating gate, and includes a second thickness (T2). The erase gate covers the erase gate dielectric layer and the lateral tip of the planar floating gate. The first thickness and the second thickness satisfy the following relation: (T2)<(T1)<2(T2).

Abstract: The invention provides a material surface treatment equipment, which is applied to a material substrate. The material surface treatment equipment includes a surface treatment device and at least one waveguide device. The surface treatment device is used to carry the material substrate to perform a surface treatment process. Each waveguide device is used for introducing electromagnetic waves to the material substrate to assist in performing the surface treatment process. Through the introduction of electromagnetic waves, the surface treatment process of the material substrate is easy to perform and can achieve the strengthening effect.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: A semiconductor structure includes a first interposer; a second interposer laterally adjacent to the first interposer, where the second interposer is spaced apart from the first interposer; and a first die attached to a first side of the first interposer and attached to a first side of the second interposer, where the first side of the first interposer and the first side of the second interposer face the first die.

Abstract: The disclosure provides a semiconductor structure and a method of forming the same. The semiconductor structure includes a base pattern including a channel region and a drain region, a first semiconductor layer on the channel region of the base pattern, and a gate structure on the first semiconductor layer. The gate structure includes a first stack disposed on the first semiconductor layer and a second stack disposed on the first stack. The first stack includes a first sidewall adjacent to the drain region and a second sidewall opposite to the first sidewall in a first direction parallel to a top surface of the base pattern. The first sidewall is at a first distance from the second stack in the first direction, and the second sidewall is at a second distance from the second stack in the first direction. The first distance is greater than the second distance.

Abstract: The present disclosure discloses a method for recycling all types of lithium batteries. First, the lithium battery waste is acid-leached to obtain a solution containing most of metal ions. After filtering, the solution is separated from the remaining solids, and then the obtained solution is subjected to separate precipitation many times. After separately adjusting the pH value of the solution many times, adding precipitants with a high selectivity ratio, and matching with filtration and separation reaction, all ions in the lithium battery waste are sequentially precipitated in forms of iron phosphate (FePO4), aluminum hydroxide (Al(OH)3), manganese oxide (MnO2), dicobalt trioxide (cobalt oxide, Co2O3), nickel hydroxide (Ni(OH)2), and lithium carbonate (Li2CO3).

Abstract: An automatic robotic arm system and a coordinating method for robotic arm and computer vision thereof are disclosed. A beam-splitting mirror splits an incident light into a visible light and a ranging light and respectively guides to an image capturing device and an optical ranging device arranged in the different reference axes. In a calibration mode, a transformation relation is computed based on a plurality of the calibration postures and corresponding calibration images. In an operation mode, a mechanical space coordinate is determined based on an operation image and the transformation relation, and the robotic arm is controlled to move based on the mechanical space coordinate.

Abstract: A method for manufacturing a memory device is provided. The method includes etching an opening in a first dielectric layer; forming a bottom electrode, a resistance switching element, and a top electrode in the opening in the first dielectric layer; forming a second dielectric layer over the bottom electrode, the resistance switching element, and the top electrode; and forming an electrode via connected to a top surface of the top electrode in the second dielectric layer.

Abstract: A semiconductor device includes a channel component of a transistor and a gate component disposed over the channel component. The gate component includes: a dielectric layer, a first work function metal layer disposed over the dielectric layer, a fill-metal layer disposed over the first work function metal layer, and a second work function metal layer disposed over the fill-metal layer.

Abstract: The present disclosure provides a method for treating liver cirrhosis by using a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors. The composition of the present disclosure achieves the effect of treating liver cirrhosis through various efficacy experiments.

Abstract: An actuating and sensing module is disclosed and includes a bottom plate, a gas pressure sensor, a thin gas transportation device and a cover plate. The bottom plate includes a pressure relief orifice, a discharging orifice and a communication orifice. The gas pressure sensor is disposed on the bottom plate and seals the communication orifice. The thin gas transportation device is disposed on the bottom plate and seals the pressure relief orifice and the discharging orifice. The cover plate is disposed on the bottom plate and covers the gas pressure sensor and the thin gas-transportation device. The cover plate includes an intake orifice. The thin gas transportation device is driven to inhale gas through the intake orifice, the gas is then discharged through the discharging orifice by the thin gas transportation device, and a pressure change of the gas is sensed by the gas pressure sensor.