Abstract: A package structure includes: a substrate includes a first surface; a semiconductor chip disposed on the first surface; a support disposed on the first surface and surrounding the semiconductor chip comprises an electrical conducting member and penetrating the support; and an optical component disposed on the support and electrically connected to the substrate by the electrical conducting member.

Abstract: A package structure includes: a substrate includes a first surface; a semiconductor chip disposed on the first surface; a support disposed on the first surface and surrounding the semiconductor chip comprises an electrical conducting member and penetrating the support; and an optical component disposed on the support and electrically connected to the substrate by the electrical conducting member.

Abstract: A semiconductor light emitting device includes a substrate, a first epitaxial structure and a second epitaxial structure, a connecting layer, a first electrode structure, a second electrode structure, and a third electrode structure. The first epitaxial structure and the second epitaxial structure are on the substrate side by side. The connecting layer is between the first epitaxial structure and the substrate, between the second epitaxial structure and the substrate, and between the first epitaxial structure and the second epitaxial structure. The first electrode structure is on the first epitaxial structure away from the substrate. The second electrode structure is on the second epitaxial structure away from the substrate. The third electrode structure is connected to the connecting layer.

Abstract: A semiconductor device includes a substrate, a first type semiconductor structure, semiconductor columnar bodies between the substrate and the first type semiconductor structure, a first electrode and a second electrode. The first type semiconductor structure includes a first surface, a second surface opposite the first surface and away from the substrate, a first extension and a second extension respectively extending outward beyond the semiconductor columnar bodies. The first electrode and the second electrode are on the second surface of the first type semiconductor structure.

Abstract: A chip package structure includes a substrate having a first surface and a second surface being opposite surfaces of the substrate; a housing disposed on the first surface of the substrate and enclosing a chip region; and a chip set disposed in the chip region and electrically connected to the substrate. The chip set includes a first chip and a second chip, and an active surface of the second chip faces the active surface of the first chip.

Abstract: A semiconductor device includes a substrate, an epitaxial stack disposed on the substrate, a first connection layer between the epitaxial stack and the substrate and a first electrode disposed on the first connection layer. The substrate has a first side surface and a second side surface. The epitaxial stack has a semiconductor structure with a first lateral surface adjacent to the first side surface and a second lateral surface opposing the first lateral surface and adjacent to the second side surface. The first connection layer has a first protruding portion extending beyond the first lateral surface and a second protruding portion extending beyond the second lateral surface. The first electrode is in contact with the first protruding portion and the second protruding portion.

Abstract: A semiconductor laser includes a base, an epitaxial structure on the base, and a first electrode and a second electrode on the epitaxial structure. The epitaxial structure includes a first semiconductor structure on the base, a second semiconductor structure on the first semiconductor structure, an intermediate layer on the second semiconductor structure, a third semiconductor structure on the intermediate layer, a current-confining layer in the third semiconductor structure, a fourth semiconductor structure on the third semiconductor structure, and an active structure between the third semiconductor structure and the fourth semiconductor structure. The first electrode and the second electrode are on the fourth semiconductor structure, wherein a part of the first electrode passes through the fourth semiconductor structure, the active structure, the current-confining layer and the third semiconductor structure and is connected to the intermediate layer.

Abstract: A laser element comprises a substrate, an adhesive layer, and a laser unit adhesive to the substrate by the adhesive layer. The laser unit includes a front conductive structure, a first type semiconductor stack, an active layer, a second type semiconductor stack, a patterned insulating layer, a back conductive structure. The back conductive structure includes a first electrode and a second electrode, and the first electrode of the back conductive structure contacts the second type semiconductor stack. A via hole passing through the patterned insulating layer, the second type semiconductor stack, the active layer and the first type semiconductor stack, and a conductive channel located in the via hole and electrically connected to the second electrode of the back conductive structure and the front conductive structure. A first passivation layer formed on a sidewall of the via hole and located between the conductive channel and the sidewall of the via hole.

Abstract: A package structure of a laser device is provided, including: a first light transmissive substrate including a first surface, a second surface opposing the first surface, a first side surface between the first surface and the second surface, and a second side surface opposing the first side surface; a laser structure including a first laser chip and a second laser chip which are disposed on the first surface, and the first laser chip including a third side surface; a first optical component disposing on the first light transmissive substrate and corresponding in position to the first laser chip; and a second optical component disposing on the light transmissive substrate and corresponding in position to the second laser chip; wherein the first side surface is coplanar with the third side surface.

Abstract: A laser element includes a transparent substrate, a conductive layer on the transparent substrate, an adhesive layer, attached to the transparent substrate and having a first side surface, a laser unit, wherein the laser unit comprises a front conductive structure, attached to the adhesive layer and having a second side surface, a back conductive structure, which comprises a first detecting electrode and a second detecting electrode separated from the first detecting electrode, a passivation layer covering one of the first side surface and the second side surface, and first via holes extending from the back conductive structure to the conductive layer, wherein the first detecting electrode and the second detecting electrode are electrically connected to the conductive layer through the first via holes.

Abstract: A package structure includes: a substrate includes a first surface; a semiconductor chip disposed on the first surface; a support disposed on the first surface and surrounding the semiconductor chip comprises an electrical conducting member and penetrating the support; and an optical component disposed on the support and electrically connected to the substrate by the electrical conducting member.

Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.

Abstract: A semiconductor device includes a substrate, an epitaxial stack disposed on the substrate, a first connection layer between the epitaxial stack and the substrate and a first electrode disposed on the first connection layer. The substrate has a first side surface and a second side surface. The epitaxial stack has a semiconductor structure with a first lateral surface adjacent to the first side surface and a second lateral surface opposing the first lateral surface and adjacent to the second side surface. The first connection layer has a first protruding portion extending beyond the first lateral surface and a second protruding portion extending beyond the second lateral surface. The first electrode is in contact with the first protruding portion and the second protruding portion.

Abstract: A light-emitting device includes: a substrate comprising a first side; multiple semiconductor stacks on the first side and separated from each other, wherein each of the multiple semiconductor stacks comprises a light extraction area; multiple electrode pads on the multiple semiconductor stacks; and a blocking layer between one of the semiconductor stacks and the substrate. The multiple semiconductor stacks comprises a first semiconductor stack and a second semiconductor stack, and the first semiconductor stack and the second semiconductor stack are independently controlled to emit light.

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

Abstract: The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.

Abstract: A laser element includes a transparent substrate, a conductive layer on the transparent substrate, an adhesive layer, attached to the transparent substrate, a laser unit, wherein the laser unit comprises a front conductive structure, attached to the adhesive layer, a back conductive structure opposite to the front conductive structure, which comprises a plurality of detecting electrodes separated from each other, and a via hole extending from the back conductive structure to the conductive layer, wherein the plurality of detecting electrodes electrically connected to the conductive layer through the via hole

Abstract: The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.

Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.

Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.