Patents by Inventor Hsin-Chan HSIEH

Hsin-Chan HSIEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250076379
    Abstract: An eye-diagram index analytic method includes: calculating a transfer function of multiple coupled lines; converting the transfer function into a pulse response; calculating an eye-diagram index according to the pulse response; and correcting the eye-diagram index according to peak distortion analysis.
    Type: Application
    Filed: March 24, 2024
    Publication date: March 6, 2025
    Applicant: Novatek Microelectronics Corp.
    Inventors: Kai Li, Chiu-Chih Chou, Ruey-Beei Wu, Hsin-Chan Hsieh, Ren-Yu Wang, Hao-Hsiang Chuang, Wei-Da Guo
  • Patent number: 11375608
    Abstract: An electromagnetic band gap structure apparatus includes a first conducting layer having at least one first slot. Each of the at least one slot is arranged with a planar conductor unit, and the each planar conductor unit is coupled to a first via. The electromagnetic band gap structure apparatus further includes a second conducting layer in parallel with the first conducting layer. The second conducting layer has a second slot. The second slot is arranged with at least one planar transmission line unit. The each of the at least one planar transmission line unit is coupled to the first conducting layer through a second via, and the each first via is coupled to the second conducting layer.
    Type: Grant
    Filed: July 23, 2020
    Date of Patent: June 28, 2022
    Assignee: REALTEK SEMICONDUCTOR CORPORATION
    Inventors: Hsin-Chan Hsieh, Ruey-Beei Wu, Shih-Hung Wang, Ting-Ying Wu
  • Publication number: 20210185799
    Abstract: An electromagnetic band gap structure apparatus includes a first conducting layer having at least one first slot. Each of the at least one slot is arranged with a planar conductor unit, and the each planar conductor unit is coupled to a first via. The electromagnetic band gap structure apparatus further includes a second conducting layer in parallel with the first conducting layer. The second conducting layer has a second slot. The second slot is arranged with at least one planar transmission line unit. The each of the at least one planar transmission line unit is coupled to the first conducting layer through a second via, and the each first via is coupled to the second conducting layer.
    Type: Application
    Filed: July 23, 2020
    Publication date: June 17, 2021
    Inventors: Hsin-Chan HSIEH, Ruey-Beei WU, Shih-Hung WANG, Ting-Ying WU