Patents by Inventor Hsin-Chang Hsiung

Hsin-Chang Hsiung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8444793
    Abstract: The present invention provides a semiconductor device and a fabricating method thereof. The fabricating method comprises: providing a first substrate; forming a soft dry film having an adhesive film and a release film; sticking the soft dry film on the first substrate with the adhesive film; removing the release film; sticking a second substrate on the adhesive film; and heating the adhesive film to solidify the adhesive film to form a solid adhesive film. The semiconductor device comprises: a first substrate, a solid adhesive film, and a second substrate. The solid adhesive film is formed on the first substrate, and the second substrate is formed on the solid adhesive film.
    Type: Grant
    Filed: February 8, 2010
    Date of Patent: May 21, 2013
    Assignees: Himax Semiconductor, Inc., Core Precision Material Co., Ltd.
    Inventors: Hsin-Chang Hsiung, Shu-Lin Ho
  • Patent number: 8361830
    Abstract: An image sensor module having a light gathering region and a light non-gathering region includes an image sensor, a light blocking spacer, a lens layer and a fixing shell. The light blocking spacer is disposed on the image sensor and located in the light non-gathering region. The light blocking spacer has a through hole exposing a portion of the image sensor in the light gathering region. The lens layer is disposed on the light blocking spacer and covers the through hole. The lens layer includes a transparent substrate and a lens disposed on the transparent substrate and located in the light gathering region. The fixing shell located in the light non-gathering region wraps the sidewalls of the image sensor, the light blocking spacer and the lens layer continuously. The material of the fixing shell includes a thermosetting material. A method for manufacturing the image sensor module is also provided.
    Type: Grant
    Filed: April 9, 2010
    Date of Patent: January 29, 2013
    Assignee: Himax Semiconductor, Inc.
    Inventors: Chuan-Hui Yang, Hsin-Chang Hsiung, Yi-Chuan Lo, Han-Yi Kuo
  • Patent number: 8193599
    Abstract: A fabricating method includes adhering an exposed surface of a first solid adhesive film to a first substrate. The second surface of the first solid adhesive film is exposed and adhered to a second substrate. A third substrate is adhered to a second substrate via a patterned second solid adhesive film, and a diaphragm layer is adhered to the third substrate via a patterned third solid adhesive film. A fourth solid adhesive film with a removable release film is adhered to the first substrate covered, followed by slicing to form wafer level lens modules.
    Type: Grant
    Filed: December 23, 2009
    Date of Patent: June 5, 2012
    Assignee: Himax Semiconductor, Inc.
    Inventors: Hsin-Chang Hsiung, Chih-Wei Tan, Po-Lin Su
  • Publication number: 20110248367
    Abstract: An image sensor module having a light gathering region and a light non-gathering region includes an image sensor, a light blocking spacer, a lens layer and a fixing shell. The light blocking spacer is disposed on the image sensor and located in the light non-gathering region. The light blocking spacer has a through hole exposing a portion of the image sensor in the light gathering region. The lens layer is disposed on the light blocking spacer and covers the through hole. The lens layer includes a transparent substrate and a lens disposed on the transparent substrate and located in the light gathering region. The fixing shell located in the light non-gathering region wraps the sidewalls of the image sensor, the light blocking spacer and the lens layer continuously. The material of the fixing shell includes a thermosetting material. A method for manufacturing the image sensor module is also provided.
    Type: Application
    Filed: April 9, 2010
    Publication date: October 13, 2011
    Applicant: HIMAX SEMICONDUCTOR, INC.
    Inventors: Chuan-Hui Yang, Hsin-Chang Hsiung, Yi-Chuan Lo, Han-Yi Kuo
  • Publication number: 20110195257
    Abstract: The present invention provides a semiconductor device and a fabricating method thereof. The fabricating method comprises: providing a first substrate; forming a soft dry film having an adhesive film and a release film; sticking the soft dry film on the first substrate with the adhesive film; removing the release film; sticking a second substrate on the adhesive film; and heating the adhesive film to solidify the adhesive film to form a solid adhesive film. The semiconductor device comprises: a first substrate, a solid adhesive film, and a second substrate. The solid adhesive film is formed on the first substrate, and the second substrate is formed on the solid adhesive film.
    Type: Application
    Filed: February 8, 2010
    Publication date: August 11, 2011
    Inventors: Hsin-Chang Hsiung, Shu-Lin Ho
  • Publication number: 20110049547
    Abstract: A fabricating method and structure form a wafer level module with a solid adhesive film. A first solid adhesive film includes a first release film and a second release film that respectively cover a first surface and a second surface of the first solid adhesive film. Openings are patterned through the first solid adhesive film. After removing parts of the first release film to expose the first surface of the first solid adhesive film, the exposed first surface of the first solid adhesive film is aligned and adhered to a first substrate.
    Type: Application
    Filed: December 23, 2009
    Publication date: March 3, 2011
    Applicant: WISEPAL TECHNOLOGIES, INC.
    Inventors: HSIN-CHANG HSIUNG, CHIH-WEI TAN, PO-LIN SU