Patents by Inventor Hsin-Chiao Fang

Hsin-Chiao Fang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11329192
    Abstract: The embodiment of the present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate. The semiconductor structure also includes a first buffer layer disposed on the substrate. The semiconductor structure further includes a second buffer layer disposed on the first buffer layer. The semiconductor structure includes a semiconductor-based layer disposed on the second buffer layer. The second buffer layer includes aluminum, and the aluminum content of the second buffer layer gradually increases in the direction away from the substrate.
    Type: Grant
    Filed: May 7, 2020
    Date of Patent: May 10, 2022
    Assignee: PLAYNITRIDE DISPLAY CO., LTD.
    Inventors: Hsin-Chiao Fang, Shen-Jie Wang, Yen-Lin Lai
  • Publication number: 20210399174
    Abstract: A light-emitting semiconductor substrate, which is applied to a light-emitting semiconductor structure, includes a base and a plurality of particle groups. The base includes an upper surface. The particle groups are on the upper surface or inside the base dispersedly, and each of the particle groups includes Sn, Sn compounds or combinations thereof.
    Type: Application
    Filed: November 9, 2020
    Publication date: December 23, 2021
    Inventors: HSIN-CHIAO FANG, YEN-LIN LAI, JYUN-DE WU
  • Patent number: 11189577
    Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate. The semiconductor structure also includes a buffer layer disposed on the substrate. The semiconductor structure further includes a first semiconductor layer disposed on the buffer layer. The buffer layer includes a first buffer structure and a second buffer structure partially disposed on the first buffer structure. The material of the first buffer structure is different from the material of the second buffer structure.
    Type: Grant
    Filed: April 6, 2020
    Date of Patent: November 30, 2021
    Assignee: PLAYNITRIDE DISPLAY CO., LTD.
    Inventors: Hsin-Chiao Fang, Shen-Jie Wang, Yen-Lin Lai
  • Publication number: 20210367105
    Abstract: A micro light-emitting diode (micro-LED) chip adapted to emit a red light or an infrared light is provided. The micro-LED chip includes a GaAs epitaxial structure layer, a first electrode, and a second electrode. The GaAs epitaxial structure layer includes an N-type contact layer, a tunneling junction layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type window layer along a stacking direction. The first electrode electrically contacts the N-type contact layer. The second electrode electrically contacts the N-type window layer.
    Type: Application
    Filed: October 21, 2020
    Publication date: November 25, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Tzu-Wen Wang, Hsin-Chiao Fang
  • Publication number: 20210135051
    Abstract: The embodiment of the present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate. The semiconductor structure also includes a first buffer layer disposed on the substrate. The semiconductor structure further includes a second buffer layer disposed on the first buffer layer. The semiconductor structure includes a semiconductor-based layer disposed on the second buffer layer. The second buffer layer includes aluminum, and the aluminum content of the second buffer layer gradually increases in the direction away from the substrate.
    Type: Application
    Filed: May 7, 2020
    Publication date: May 6, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Hsin-Chiao FANG, Shen-Jie WANG, Yen-Lin LAI
  • Publication number: 20210134737
    Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate. The semiconductor structure also includes a buffer layer disposed on the substrate. The semiconductor structure further includes a first semiconductor layer disposed on the buffer layer. The buffer layer includes a first buffer structure and a second buffer structure partially disposed on the first buffer structure. The material of the first buffer structure is different from the material of the second buffer structure.
    Type: Application
    Filed: April 6, 2020
    Publication date: May 6, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Hsin-Chiao FANG, Shen-Jie WANG, Yen-Lin LAI
  • Patent number: 10468549
    Abstract: A nitrogen-containing semiconductor device including a first type doped semiconductor layer, a multiple quantum well layer and a second type doped semiconductor layer is provided. The multiple quantum well layer includes barrier layers and well layers, and the well layers and the barrier layers are arranged alternately. The multiple quantum well layer is located between the first type doped semiconductor layer and the second type doped semiconductor layer, and one of the well layers of the multiple quantum well layer is connected to the second type doped semiconductor layer.
    Type: Grant
    Filed: September 19, 2017
    Date of Patent: November 5, 2019
    Assignee: Genesis Photonics Inc.
    Inventors: Hsin-Chiao Fang, Cheng-Hsueh Lu, Cheng-Hung Lin, Chi-Hao Cheng, Chi-Feng Huang
  • Patent number: 10229977
    Abstract: A nitrogen-containing semiconductor device including a substrate, a first AlGaN buffer layer, a second AlGaN buffer layer and a semiconductor stacking layer is provided. The first AlGaN buffer layer is disposed on the substrate, and the second AlGaN buffer layer is disposed on the first AlGaN buffer layer. A chemical formula of the first AlGaN buffer layer is AlxGa1-xN, wherein 0?x?1. The first AlGaN buffer layer is doped with at least one of oxygen having a concentration greater than 5×1017 cm?3 and carbon having a concentration greater than 5×1017 cm?3. A chemical formula of the second AlGaN buffer layer is AlyGa1-yN, wherein 0?y?1. The semiconductor stacking layer is disposed on the second AlGaN buffer layer.
    Type: Grant
    Filed: September 19, 2017
    Date of Patent: March 12, 2019
    Assignee: Genesis Photonics Inc.
    Inventors: Cheng-Hsueh Lu, Hsin-Chiao Fang, Chi-Hao Cheng, Chih-Feng Lu, Chi-Feng Huang
  • Publication number: 20180083162
    Abstract: A nitrogen-containing semiconductor device including a first type doped semiconductor layer, a multiple quantum well layer and a second type doped semiconductor layer is provided. The multiple quantum well layer includes barrier layers and well layers, and the well layers and the barrier layers are arranged alternately. The multiple quantum well layer is located between the first type doped semiconductor layer and the second type doped semiconductor layer, and one of the well layers of the multiple quantum well layer is connected to the second type doped semiconductor layer.
    Type: Application
    Filed: September 19, 2017
    Publication date: March 22, 2018
    Applicant: Genesis Photonics Inc.
    Inventors: Hsin-Chiao Fang, Cheng-Hsueh Lu, Cheng-Hung Lin, Chi-Hao Cheng, Chi-Feng Huang
  • Publication number: 20180083108
    Abstract: A nitrogen-containing semiconductor device including a substrate, a first AlGaN buffer layer, a second AlGaN buffer layer and a semiconductor stacking layer is provided. The first AlGaN buffer layer is disposed on the substrate, and the second AlGaN buffer layer is disposed on the first AlGaN buffer layer. A chemical formula of the first AlGaN buffer layer is AlxGa1-xN, wherein 0?x?1. The first AlGaN buffer layer is doped with at least one of oxygen having a concentration greater than 5×1017 cm?3 and carbon having a concentration greater than 5×1017 cm?3. A chemical formula of the second AlGaN buffer layer is AlyGa1-yN, wherein 0?y?1. The semiconductor stacking layer is disposed on the second AlGaN buffer layer.
    Type: Application
    Filed: September 19, 2017
    Publication date: March 22, 2018
    Applicant: Genesis Photonics Inc.
    Inventors: Cheng-Hsueh Lu, Hsin-Chiao Fang, Chi-Hao Cheng, Chih-Feng Lu, Chi-Feng Huang
  • Patent number: 9640716
    Abstract: A multiple quantum well structure includes a plurality of well-barrier sets arranged along a direction. Each of the well-barrier sets includes a barrier layer, at least one intermediate level layer, and a well layer. A bandgap of the barrier layer is greater than an average bandgap of the intermediate level layer, and the average bandgap of the intermediate level layer is greater than a bandgap of the well layer. The barrier layers, the intermediate level layers, and the well layers of the well-barrier sets are stacked by turns. Thicknesses of at least parts of the well layers in the direction gradually decrease along the direction, and thicknesses of at least parts of the intermediate level layers in the direction gradually increase along the direction. A method for manufacturing a multiple quantum well structure is also provided.
    Type: Grant
    Filed: July 28, 2015
    Date of Patent: May 2, 2017
    Assignee: Genesis Photonics Inc.
    Inventors: Chi-Feng Huang, Hsin-Chiao Fang, Chi-Hao Cheng
  • Publication number: 20170033260
    Abstract: A multiple quantum well structure includes a plurality of well-barrier sets arranged along a direction. Each of the well-barrier sets includes a barrier layer, at least one intermediate level layer, and a well layer. A bandgap of the barrier layer is greater than an average bandgap of the intermediate level layer, and the average bandgap of the intermediate level layer is greater than a bandgap of the well layer. The barrier layers, the intermediate level layers, and the well layers of the well-barrier sets are stacked by turns. Thicknesses of at least parts of the well layers in the direction gradually decrease along the direction, and thicknesses of at least parts of the intermediate level layers in the direction gradually increase along the direction. A method for manufacturing a multiple quantum well structure is also provided.
    Type: Application
    Filed: July 28, 2015
    Publication date: February 2, 2017
    Inventors: Chi-Feng Huang, Hsin-Chiao Fang, Chi-Hao Cheng