Patents by Inventor Hsin-Chiao Fang
Hsin-Chiao Fang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240128397Abstract: An epitaxial structure including a first epitaxial layer, a second epitaxial layer, and an interface treatment layer is provided. The first epitaxial layer is an ohmic contact layer. The second epitaxial layer is disposed on the first epitaxial layer and is a phosphide compound layer, where a material of the second epitaxial layer is different from a material of the first epitaxial layer. The interface treatment layer contacts the first epitaxial layer and the second epitaxial layer and is located between the first epitaxial layer and the second epitaxial layer. An image contrast ratio of a transmission electron microscope (TEM) of the interface treatment layer to the first epitaxial layer and an image contrast ratio of the TEM of the interface treatment layer to the second epitaxial layer are both greater than 1.005. A method for forming an epitaxial structure is also provided.Type: ApplicationFiled: November 18, 2022Publication date: April 18, 2024Applicant: PlayNitride Display Co., Ltd.Inventors: Hsin-Chiao Fang, Shen-Jie Wang, Yen-Lin Lai
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Publication number: 20240128398Abstract: An epitaxial structure includes a first epitaxial layer, a second epitaxial layer, and an interface treatment layer. The second epitaxial layer is disposed on the first epitaxial layer. The interface treatment layer is located between the first epitaxial layer and the second epitaxial layer and is in contact with the first epitaxial layer and the second epitaxial layer. The first epitaxial layer, the second epitaxial layer, and the interface treatment layer include the same material. An image contrast ratio of a transmission electron microscope (TEM) of the interface treatment layer to the first epitaxial layer and an image contrast ratio of a TEM of the interface treatment layer to the second epitaxial layer are both greater than 1.005. A method for forming an epitaxial structure is also provided.Type: ApplicationFiled: November 25, 2022Publication date: April 18, 2024Applicant: PlayNitride Display Co., Ltd.Inventors: Hsin-Chiao Fang, Shen-Jie Wang, Yen-Lin Lai
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Publication number: 20240097070Abstract: A micro light-emitting component including a first type cladding layer, a light-emitting layer, a second type cladding layer, a plurality of window layers and at least one interposer is provided. The light-emitting layer is located on the first type cladding layer, and the second type cladding layer is located on the light-emitting layer. The light-emitting layer is located between the first type cladding layer and the second type cladding layer. The window layers are located on the second type cladding layer. The interposer is located between any two adjacent of the window layers. An ion doping concentration of the interposer is less than or equal to an ion doping concentration of the window layers.Type: ApplicationFiled: October 31, 2022Publication date: March 21, 2024Applicant: PlayNitride Display Co., Ltd.Inventors: Hsin-Chiao Fang, Shen-Jie Wang, Yen-Lin Lai
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Patent number: 11658268Abstract: A light-emitting semiconductor substrate, which is applied to a light-emitting semiconductor structure, includes a base and a plurality of particle groups. The base includes an upper surface. The particle groups are on the upper surface or inside the base dispersedly, and each of the particle groups includes Sn, Sn compounds or combinations thereof.Type: GrantFiled: November 9, 2020Date of Patent: May 23, 2023Assignee: PlayNitride Display Co., Ltd.Inventors: Hsin-Chiao Fang, Yen-Lin Lai, Jyun-De Wu
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Publication number: 20230008639Abstract: A micro light emitting diode chip including a first-type semiconductor layer, an active layer, a second-type semiconductor layer, a first-type electrode, and a second-type electrode is provided. The first-type semiconductor layer has a first high-concentration doping region and a first low-concentration doping region. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first-type electrode is directly contacted and electrically connected to the first high-concentration doping region. The second-type electrode is electrically connected to the second-type semiconductor layer.Type: ApplicationFiled: September 30, 2021Publication date: January 12, 2023Applicant: PlayNitride Display Co., Ltd.Inventors: Hsin-Chiao Fang, Jyun-De Wu
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Patent number: 11411136Abstract: A micro light-emitting diode (micro-LED) chip adapted to emit a red light or an infrared light is provided. The micro-LED chip includes a GaAs epitaxial structure layer, a first electrode, and a second electrode. The GaAs epitaxial structure layer includes an N-type contact layer, a tunneling junction layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type window layer along a stacking direction. The first electrode electrically contacts the N-type contact layer. The second electrode electrically contacts the N-type window layer.Type: GrantFiled: October 21, 2020Date of Patent: August 9, 2022Assignee: PlayNitride Display Co., Ltd.Inventors: Tzu-Wen Wang, Hsin-Chiao Fang
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Patent number: 11329192Abstract: The embodiment of the present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate. The semiconductor structure also includes a first buffer layer disposed on the substrate. The semiconductor structure further includes a second buffer layer disposed on the first buffer layer. The semiconductor structure includes a semiconductor-based layer disposed on the second buffer layer. The second buffer layer includes aluminum, and the aluminum content of the second buffer layer gradually increases in the direction away from the substrate.Type: GrantFiled: May 7, 2020Date of Patent: May 10, 2022Assignee: PLAYNITRIDE DISPLAY CO., LTD.Inventors: Hsin-Chiao Fang, Shen-Jie Wang, Yen-Lin Lai
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Publication number: 20210399174Abstract: A light-emitting semiconductor substrate, which is applied to a light-emitting semiconductor structure, includes a base and a plurality of particle groups. The base includes an upper surface. The particle groups are on the upper surface or inside the base dispersedly, and each of the particle groups includes Sn, Sn compounds or combinations thereof.Type: ApplicationFiled: November 9, 2020Publication date: December 23, 2021Inventors: HSIN-CHIAO FANG, YEN-LIN LAI, JYUN-DE WU
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Patent number: 11189577Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate. The semiconductor structure also includes a buffer layer disposed on the substrate. The semiconductor structure further includes a first semiconductor layer disposed on the buffer layer. The buffer layer includes a first buffer structure and a second buffer structure partially disposed on the first buffer structure. The material of the first buffer structure is different from the material of the second buffer structure.Type: GrantFiled: April 6, 2020Date of Patent: November 30, 2021Assignee: PLAYNITRIDE DISPLAY CO., LTD.Inventors: Hsin-Chiao Fang, Shen-Jie Wang, Yen-Lin Lai
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Publication number: 20210367105Abstract: A micro light-emitting diode (micro-LED) chip adapted to emit a red light or an infrared light is provided. The micro-LED chip includes a GaAs epitaxial structure layer, a first electrode, and a second electrode. The GaAs epitaxial structure layer includes an N-type contact layer, a tunneling junction layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type window layer along a stacking direction. The first electrode electrically contacts the N-type contact layer. The second electrode electrically contacts the N-type window layer.Type: ApplicationFiled: October 21, 2020Publication date: November 25, 2021Applicant: PlayNitride Display Co., Ltd.Inventors: Tzu-Wen Wang, Hsin-Chiao Fang
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Publication number: 20210135051Abstract: The embodiment of the present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate. The semiconductor structure also includes a first buffer layer disposed on the substrate. The semiconductor structure further includes a second buffer layer disposed on the first buffer layer. The semiconductor structure includes a semiconductor-based layer disposed on the second buffer layer. The second buffer layer includes aluminum, and the aluminum content of the second buffer layer gradually increases in the direction away from the substrate.Type: ApplicationFiled: May 7, 2020Publication date: May 6, 2021Applicant: PlayNitride Display Co., Ltd.Inventors: Hsin-Chiao FANG, Shen-Jie WANG, Yen-Lin LAI
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Publication number: 20210134737Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate. The semiconductor structure also includes a buffer layer disposed on the substrate. The semiconductor structure further includes a first semiconductor layer disposed on the buffer layer. The buffer layer includes a first buffer structure and a second buffer structure partially disposed on the first buffer structure. The material of the first buffer structure is different from the material of the second buffer structure.Type: ApplicationFiled: April 6, 2020Publication date: May 6, 2021Applicant: PlayNitride Display Co., Ltd.Inventors: Hsin-Chiao FANG, Shen-Jie WANG, Yen-Lin LAI
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Patent number: 10468549Abstract: A nitrogen-containing semiconductor device including a first type doped semiconductor layer, a multiple quantum well layer and a second type doped semiconductor layer is provided. The multiple quantum well layer includes barrier layers and well layers, and the well layers and the barrier layers are arranged alternately. The multiple quantum well layer is located between the first type doped semiconductor layer and the second type doped semiconductor layer, and one of the well layers of the multiple quantum well layer is connected to the second type doped semiconductor layer.Type: GrantFiled: September 19, 2017Date of Patent: November 5, 2019Assignee: Genesis Photonics Inc.Inventors: Hsin-Chiao Fang, Cheng-Hsueh Lu, Cheng-Hung Lin, Chi-Hao Cheng, Chi-Feng Huang
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Patent number: 10229977Abstract: A nitrogen-containing semiconductor device including a substrate, a first AlGaN buffer layer, a second AlGaN buffer layer and a semiconductor stacking layer is provided. The first AlGaN buffer layer is disposed on the substrate, and the second AlGaN buffer layer is disposed on the first AlGaN buffer layer. A chemical formula of the first AlGaN buffer layer is AlxGa1-xN, wherein 0?x?1. The first AlGaN buffer layer is doped with at least one of oxygen having a concentration greater than 5×1017 cm?3 and carbon having a concentration greater than 5×1017 cm?3. A chemical formula of the second AlGaN buffer layer is AlyGa1-yN, wherein 0?y?1. The semiconductor stacking layer is disposed on the second AlGaN buffer layer.Type: GrantFiled: September 19, 2017Date of Patent: March 12, 2019Assignee: Genesis Photonics Inc.Inventors: Cheng-Hsueh Lu, Hsin-Chiao Fang, Chi-Hao Cheng, Chih-Feng Lu, Chi-Feng Huang
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Publication number: 20180083108Abstract: A nitrogen-containing semiconductor device including a substrate, a first AlGaN buffer layer, a second AlGaN buffer layer and a semiconductor stacking layer is provided. The first AlGaN buffer layer is disposed on the substrate, and the second AlGaN buffer layer is disposed on the first AlGaN buffer layer. A chemical formula of the first AlGaN buffer layer is AlxGa1-xN, wherein 0?x?1. The first AlGaN buffer layer is doped with at least one of oxygen having a concentration greater than 5×1017 cm?3 and carbon having a concentration greater than 5×1017 cm?3. A chemical formula of the second AlGaN buffer layer is AlyGa1-yN, wherein 0?y?1. The semiconductor stacking layer is disposed on the second AlGaN buffer layer.Type: ApplicationFiled: September 19, 2017Publication date: March 22, 2018Applicant: Genesis Photonics Inc.Inventors: Cheng-Hsueh Lu, Hsin-Chiao Fang, Chi-Hao Cheng, Chih-Feng Lu, Chi-Feng Huang
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Publication number: 20180083162Abstract: A nitrogen-containing semiconductor device including a first type doped semiconductor layer, a multiple quantum well layer and a second type doped semiconductor layer is provided. The multiple quantum well layer includes barrier layers and well layers, and the well layers and the barrier layers are arranged alternately. The multiple quantum well layer is located between the first type doped semiconductor layer and the second type doped semiconductor layer, and one of the well layers of the multiple quantum well layer is connected to the second type doped semiconductor layer.Type: ApplicationFiled: September 19, 2017Publication date: March 22, 2018Applicant: Genesis Photonics Inc.Inventors: Hsin-Chiao Fang, Cheng-Hsueh Lu, Cheng-Hung Lin, Chi-Hao Cheng, Chi-Feng Huang
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Patent number: 9640716Abstract: A multiple quantum well structure includes a plurality of well-barrier sets arranged along a direction. Each of the well-barrier sets includes a barrier layer, at least one intermediate level layer, and a well layer. A bandgap of the barrier layer is greater than an average bandgap of the intermediate level layer, and the average bandgap of the intermediate level layer is greater than a bandgap of the well layer. The barrier layers, the intermediate level layers, and the well layers of the well-barrier sets are stacked by turns. Thicknesses of at least parts of the well layers in the direction gradually decrease along the direction, and thicknesses of at least parts of the intermediate level layers in the direction gradually increase along the direction. A method for manufacturing a multiple quantum well structure is also provided.Type: GrantFiled: July 28, 2015Date of Patent: May 2, 2017Assignee: Genesis Photonics Inc.Inventors: Chi-Feng Huang, Hsin-Chiao Fang, Chi-Hao Cheng
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Publication number: 20170033260Abstract: A multiple quantum well structure includes a plurality of well-barrier sets arranged along a direction. Each of the well-barrier sets includes a barrier layer, at least one intermediate level layer, and a well layer. A bandgap of the barrier layer is greater than an average bandgap of the intermediate level layer, and the average bandgap of the intermediate level layer is greater than a bandgap of the well layer. The barrier layers, the intermediate level layers, and the well layers of the well-barrier sets are stacked by turns. Thicknesses of at least parts of the well layers in the direction gradually decrease along the direction, and thicknesses of at least parts of the intermediate level layers in the direction gradually increase along the direction. A method for manufacturing a multiple quantum well structure is also provided.Type: ApplicationFiled: July 28, 2015Publication date: February 2, 2017Inventors: Chi-Feng Huang, Hsin-Chiao Fang, Chi-Hao Cheng