Abstract: A method of manufacturing an epitaxiable heat-dissipating substrate comprises the steps of (A) forming a roughened surface on a substrate made of a polycrystalline or amorphous material with a high thermal conductivity coefficient; (B) forming a flat layer on the roughened surface; and (C) forming a buffer layer on the flat layer. The flat layer reduces the surface roughness of the substrate, and then the buffer layer functions as a base for epitaxial growth, thereby being directly applicable to production of semiconductor devices which are flat and capable of isotropic epitaxial growth.

Abstract: An oxide-confined vertical cavity surface emitting laser (VCSEL) device and the method for manufacturing the same are disclosed. After completing the oxidation procedure for the oxide-confined VCSEL, a filling material is deposited on the etched groove. This procedure can planarize the etched device surface for subsequent fabrication of a metal electrode. The invention can improve the device yield and the properties at the same time.