Patents by Inventor Hsin-Chien LU

Hsin-Chien LU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DYNAMIC IMAGE DIFFRACTIVE DEVICE PRODUCT AND A METHOD OF MANUFACTURING THE SAME
    Publication number: 20190383980
    Abstract: A dynamic image diffractive device product, including: a transparent substrate; and a hardened resin pattern layer adhered with a surface of the transparent substrate; wherein the hardened resin pattern layer has a plurality of grating pattern regions, so that when the transparent substrate is moved by a driving device to have each pattern region of the plurality of grating pattern regions illuminated in turn by a laser light source, a transmitted light beam from the transparent substrate will present a dynamic image on a surface of an external object.
    Type: Application
    Filed: June 19, 2018
    Publication date: December 19, 2019
    Inventors: Hsin-Chien LU, Hsien-Ming CHIU
  • Methods for forming integrated circuits
    Patent number: 9048186
    Abstract: A method for forming an integrated circuit is provided. The method includes forming a gate dielectric structure over a substrate. A titanium-containing sacrificial layer is formed, contacting the gate dielectric structure. The whole titanium-containing sacrificial layer is substantially removed.
    Type: Grant
    Filed: September 10, 2010
    Date of Patent: June 2, 2015
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kuo Bin Huang, Hsin-Chien Lu, Ryan Chia-Jen Chen, Chi-Ming Yang, Chyi Shyuan Chern, Chin-Hsiang Lin
  • METHODS FOR FORMING INTEGRATED CIRCUITS
    Publication number: 20110086504
    Abstract: A method for forming an integrated circuit is provided. The method includes forming a gate dielectric structure over a substrate. A titanium-containing sacrificial layer is formed, contacting the gate dielectric structure. The whole titanium-containing sacrificial layer is substantially removed.
    Type: Application
    Filed: September 10, 2010
    Publication date: April 14, 2011
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kuo Bin HUANG, Hsin-Chien LU, Ryan Chia-Jen CHEN, Chi-Ming YANG, Chyi Shyuan CHERN, Chin-Hsiang LIN