Patents by Inventor Hsin-Chih Chiu
Hsin-Chih Chiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11901480Abstract: The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.Type: GrantFiled: August 9, 2021Date of Patent: February 13, 2024Assignee: EPISTAR CORPORATIONInventors: Chien-Fu Huang, Chih-Chiang Lu, Chun-Yu Lin, Hsin-Chih Chiu
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Patent number: 11901478Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.Type: GrantFiled: December 27, 2021Date of Patent: February 13, 2024Assignee: EPISTAR CORPORATIONInventors: Hao-Min Ku, You-Hsien Chang, Shih-I Chen, Fu-Chun Tsai, Hsin-Chih Chiu
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Publication number: 20240047604Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.Type: ApplicationFiled: October 17, 2023Publication date: February 8, 2024Inventors: Hsin-Chih Chiu, Chih-Chiang Lu, Chun-Yu Lin, Ching-Huai Ni, Yi-Ming Chen, Tzu-Chieh Hsu, Ching-Pei Lin
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Patent number: 11791436Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.Type: GrantFiled: January 6, 2022Date of Patent: October 17, 2023Assignee: EPISTAR CORPORATIONInventors: Hsin-Chih Chiu, Chih-Chiang Lu, Chun-Yu Lin, Ching-Huai Ni, Yi-Ming Chen, Tzu-Chieh Hsu, Ching-Pei Lin
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Publication number: 20220131029Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.Type: ApplicationFiled: January 6, 2022Publication date: April 28, 2022Inventors: Hsin-Chih Chiu, Chih-Chiang Lu, Chun-Yu Lin, Ching-Huai Ni, Yi-Ming Chen, Tzu-Chieh Hsu, Ching-Pei Lin
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Publication number: 20220123167Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.Type: ApplicationFiled: December 27, 2021Publication date: April 21, 2022Inventors: Hao-Min KU, You-Hsien CHANG, Shih-I CHEN, Fu-Chun TSAI, Hsin-Chih CHIU
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Patent number: 11251328Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.Type: GrantFiled: May 11, 2020Date of Patent: February 15, 2022Assignee: EPISTAR CORPORATIONInventors: Hsin-Chih Chiu, Chih-Chiang Lu, Chun-Yu Lin, Ching-Huai Ni, Yi-Ming Chen, Tzu-Chieh Hsu, Ching-Pei Lin
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Patent number: 11211522Abstract: A method of transferring semiconductor devices from a first substrate to a second substrate, including providing the semiconductor devices which are between the first substrate and the second substrate. The semiconductor devices include a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof. The first semiconductor device and the second semiconductor device are moved from the first substrate by a picking unit. The picking unit, the first semiconductor device, and the second semiconductor device are moved close to the second substrate. The picking unit has a space apart from the second substrate. The first semiconductor device and the second semiconductor device are transferred from the picking unit to the second substrate. The he first semiconductor device and the second semiconductor device on the second substrate have a second gap between thereof. The first gap and the second gap are different.Type: GrantFiled: June 22, 2020Date of Patent: December 28, 2021Assignee: EPISTAR CORPORATIONInventors: Hao-Min Ku, You-Hsien Chang, Shih-I Chen, Fu-Chun Tsai, Hsin-Chih Chiu
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Publication number: 20210367098Abstract: The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.Type: ApplicationFiled: August 9, 2021Publication date: November 25, 2021Inventors: Chien-Fu HUANG, Chih-Chiang LU, Chun-Yu LIN, Hsin-Chih CHIU
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Patent number: 11088298Abstract: The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.Type: GrantFiled: May 26, 2020Date of Patent: August 10, 2021Assignee: EPISTAR CORPORATIONInventors: Chien-Fu Huang, Chih-Chiang Lu, Chun-Yu Lin, Hsin-Chih Chiu
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Publication number: 20200321487Abstract: A method of transferring semiconductor devices from a first substrate to a second substrate, including providing the semiconductor devices which are between the first substrate and the second substrate. The semiconductor devices include a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof. The first semiconductor device and the second semiconductor device are moved from the first substrate by a picking unit. The picking unit, the first semiconductor device, and the second semiconductor device are moved close to the second substrate. The picking unit has a space apart from the second substrate. The first semiconductor device and the second semiconductor device are transferred from the picking unit to the second substrate. The he first semiconductor device and the second semiconductor device on the second substrate have a second gap between thereof. The first gap and the second gap are different.Type: ApplicationFiled: June 22, 2020Publication date: October 8, 2020Inventors: Hao-Min KU, You-Hsien CHANG, Shih-I CHEN, Fu-Chun TSAI, Hsin-Chih CHIU
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Publication number: 20200287075Abstract: The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.Type: ApplicationFiled: May 26, 2020Publication date: September 10, 2020Inventors: Chien-Fu HUANG, Chih-Chiang LU, Chun-Yu LIN, Hsin-Chih CHIU
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Publication number: 20200274022Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.Type: ApplicationFiled: May 11, 2020Publication date: August 27, 2020Inventors: Hsin-Chih Chiu, Chih-Chiang Lu, Chun-Yu Lin, Ching-Huai Ni, Yi-Ming Chen, Tzu-Chieh Hsu, Ching-Pei Lin
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Patent number: 10693034Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.Type: GrantFiled: August 22, 2017Date of Patent: June 23, 2020Assignee: EPISTAR CORPORATIONInventors: Hao-Min Ku, You-Hsien Chang, Shih-I Chen, Fu-Chun Tsai, Hsin-Chih Chiu
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Patent number: 10680133Abstract: The present disclosure provides a light-emitting device comprises a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first light-emitting layer separated from the topmost surface by a first distance; a second semiconductor stack arranged on the substrate, and comprising a second light-emitting layer separated from the topmost surface by a second distance; and a third semiconductor stack arranged on the substrate, and comprising third light-emitting layer separated from the topmost surface by a third distance; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights; and wherein the second distance is different form the first distance and the third distance.Type: GrantFiled: June 10, 2019Date of Patent: June 9, 2020Assignee: EPISTAR CORPORATIONInventors: Chien-Fu Huang, Chih-Chiang Lu, Chun-Yu Lin, Hsin-Chih Chiu
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Patent number: 10651335Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.Type: GrantFiled: May 7, 2019Date of Patent: May 12, 2020Assignee: EPISTAR CORPORATIONInventors: Hsin-Chih Chiu, Chih-Chiang Lu, Chun-Yu Lin, Ching-Huai Ni, Yi-Ming Chen, Tzu-Chieh Hsu, Ching-Pei Lin
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Publication number: 20200118802Abstract: A masking structure for a wafer supporting plate comprises a cavity; a carrying tray having a plurality of recesses in a top surface thereof for receiving a plurality of wafers; the carrying tray can be transferred into and out of the cavity by using a robot; a supporting plate installed within the cavity and below the carrying tray; the supporting plate could move upwards, and downwards; a mask installed within the cavity and above the carrying tray; the mask formed with a plurality of through holes which are positioned and shaped to be corresponding to those of the wafers on the carrying tray; therefore, when the supporting plate lifts the carrying tray to be near the mask, the wafers are exposed out of the through holes.Type: ApplicationFiled: October 11, 2018Publication date: April 16, 2020Inventors: LIN-SHENG LU, Cheng-Chih Hsieh, Hsuan-Chung Chen, Hsin Chih Chiu, Yao-Syuan Cheng, Chun-Fu Wang
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Patent number: 10566498Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.Type: GrantFiled: July 24, 2018Date of Patent: February 18, 2020Assignee: EPISTAR CORPORATIONInventors: Hsin-Chih Chiu, Shih-I Chen, You-Hsien Chang, Hao-Min Ku, Ching-Yuan Tsai, Kuan-Chih Kuo, Chih-Hung Hsiao, Rong-Ren Lee
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Publication number: 20190355560Abstract: A PVD reactor with a function of alignment in covering an upper cover includes a cavity having a first contact surface; an interior of the cavity having a metal isolation plate; an upper cover pivotally installed to the cavity; the upper cover having a second contact surface which is positioned corresponding to the first contact surface of the cavity; the upper cover being capable of being combined with a target; a plurality of semi-spherical recesses in the first contact surface of the cavity; and a plurality of semi-spherical protrusions in the second contact surface; when the upper cover covers upon the cavity, the plurality of semi-spherical protrusions will embed into the plurality of semi-spherical recesses.Type: ApplicationFiled: May 21, 2018Publication date: November 21, 2019Inventors: YING HSIEN CHENG, Yuan Yuan Song, Wei Chuan Chou, Hsin-Chih Chiu, Yu Hung Huang, Kuei Chang Peng
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Publication number: 20190296186Abstract: The present disclosure provides a light-emitting device comprises a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first light-emitting layer separated from the topmost surface by a first distance; a second semiconductor stack arranged on the substrate, and comprising a second light-emitting layer separated from the topmost surface by a second distance; and a third semiconductor stack arranged on the substrate, and comprising third light-emitting layer separated from the topmost surface by a third distance; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights; and wherein the second distance is different form the first distance and the third distance.Type: ApplicationFiled: June 10, 2019Publication date: September 26, 2019Inventors: Chien-Fu HUANG, Chih-Chiang LU, Chun-Yu LIN, Hsin-Chih CHIU