Abstract: A high electron mobility transistor includes a semiconductor channel layer and a semiconductor barrier layer disposed on a substrate. A source electrode, a gate electrode and a drain electrode are disposed on the semiconductor channel layer. A patterned dielectric layer is disposed on the semiconductor barrier layer, and between the gate electrode and the drain electrode. A first field plate is extended continuously from a side of the patterned dielectric layer to the top surface thereof, and has a step in height. A first dielectric layer is disposed between the semiconductor barrier layer and the patterned dielectric layer. A second dielectric layer covers the patterned dielectric layer. The dielectric constant of the patterned dielectric layer is higher than that of the first dielectric layer and the second dielectric layer.

Abstract: The invention discloses a centralized computer system, i.e., so-called blade PC system. The centralized computer system according to the invention includes a plurality of centralized and bladed hosts and a plurality of I/O peripherals. In particularly, the centralized computer system according to the invention is capable of automatically detecting a current status of each host and/or each set of I/O peripherals.

Abstract: The invention discloses a centralized computer system, i.e., so-called blade PC system. The centralized computer system according to the invention includes a plurality of centralized and bladed hosts and a plurality of I/O peripherals. In particularly, the centralized computer system according to the invention is capable of automatically detecting a current status of each host and/or each set of I/O peripherals.