Patents by Inventor Hsin-Chun Ko

Hsin-Chun Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HIGH-K METAL GATE STRUCTURE INCLUDING BUFFER LAYER
    Publication number: 20100052077
    Abstract: A high-k metal gate structure including a buffer layer and method of fabrication of such, is provided. The buffer layer may interpose an interface oxide layer and a high-k gate dielectric layer. In one embodiment, the buffer layer includes aluminum oxide. The buffer layer and the high-k gate dielectric layer may be formed in-situ using an atomic layer deposition (ALD) process.
    Type: Application
    Filed: April 13, 2009
    Publication date: March 4, 2010
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Peng-Fu Hsu, Hsin-Chun Ko, Kang-Cheng Lin, Kuo-Tai Huang