Abstract: The invention is directed to a method for patterning a material layer. The method comprises steps of providing a material layer having a first hard mask layer and a second hard mask layer successively formed thereon and then patterning the second hard mask layer. Thereafter, an etching process is performed to pattern the first hard mask layer by using the patterned second hard mask layer as a mask, and the etching process is performed with a power of about 1000 W. Next, the material layer is patterned by using the patterned first hard mask layer as a mask.

Abstract: A structure of a semiconductor device including a substrate and a patterned layer is provided. The patterned layer being patterned to have an open area and a dense area is disposed on the substrate. The patterned layer includes, in the dense area, a first pattern adjacent to the open area and a second pattern. The first pattern has a first bottom. The second pattern has a second bottom width. The bottom of the first pattern includes a recess facing the open area, so that the first bottom width is close to the second bottom width.

Abstract: The invention is directed to a method for patterning a material layer. The method comprises steps of providing a material layer having a first hard mask layer and a second hard mask layer successively formed thereon and then patterning the second hard mask layer. Thereafter, an etching process is performed to pattern the first hard mask layer by using the patterned second hard mask layer as a mask, and the etching process is performed with a power of about 1000 W. Next, the material layer is patterned by using the patterned first hard mask layer as a mask.

Abstract: A structure of a semiconductor device including a substrate and a patterned layer is provided. The patterned layer being patterned to have an open area and a dense area is disposed on the substrate. The patterned layer includes, in the dense area, a first pattern adjacent to the open area and a second pattern. The first pattern has a first bottom. The second pattern has a second bottom width. The bottom of the first pattern includes a recess facing the open area, so that the first bottom width is close to the second bottom width.

Abstract: A method for in-situ repairing plasma damage, suitable for a substrate, is provided. A component is formed on the substrate. The formation steps of the component include a main etching process containing plasma. The method involves performing a soft plasma etching process in the apparatus of the main etching process containing plasma to remove a portion of the substrate. The soft plasma etching process is less than 30% of the power used in the main etching process.