Abstract: A semiconductor structure includes a substrate, a conductive via and a first insulation layer. The conductive via is through the substrate. The first insulation layer is between the substrate and the conductive via. A first surface of the first insulation layer facing the substrate and a second surface of the first insulation layer facing the conductive via are extended along different directions.

Abstract: An analysis method and an electronic apparatus for breast image are provided. The method includes the following steps. One or more breast ultrasound images are obtained. The breast ultrasound images are used for forming a three-dimensional (3D) breast model. A volume of interest (VOI) in the breast ultrasound image is obtained by applying a detection model on the 3D breast model. The VOI is compared with a tissue segmentation result. The VOI is determined as a false positive according to a compared result between the VOI and the tissue segmentation result. The compared result includes that the VOI is located at a glandular tissue based on the tissue segmentation result. In response to the VOI being located in the glandular tissue of the tissue segmentation result, the VOI is compared with the lactiferous duct in the 3D breast model.

Abstract: A display including a screen, a bracket, a hanging element and a fixing element is provided. The support is connected to the screen and has a top end and a bottom end. The hanging element is disposed on the top end. The fixing element is disposed at the bottom end. When the hanging element is hung on an upper edge of a plate, the fixing element is fixed on a surface of the plate.

Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.

Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.

Abstract: In order to prevent long down-time that occurs with unexpected material depletion, an Inline Tin Stream Monitor (ITSM) system precisely measures the tin amount introduced by an in-line refill system and precisely estimates remaining runtime by measuring pressure level changes before and after in-line refill.

Abstract: A method includes dispensing a droplet into a vacuum chamber; firing a pre-pulse laser to the droplet; sensing a first image of a return beam of the pre-pulse laser from the droplet; after firing the pre-pulse laser, firing a main-pulse laser to the droplet, wherein when the main-pulse laser hits the droplet, the droplet is vaporized into a plasma that emits extreme ultraviolet radiation; after sensing the first image and firing the main-pulse laser, sensing a second image of a return beam of the main-pulse laser from the droplet; and adjusting a plasma position in the vacuum chamber according to at least the second image.

Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a droplet generator with a nozzle and a piezoelectric structure coupled to the nozzle. The generator outputs groups of droplets. A control system applies a voltage waveform to the piezoelectric structure while the nozzle outputs the group of droplets. The waveform causes the droplets of the group to have a spread of velocities that results in the droplets coalescing into a single droplet prior to being irradiated by the laser.

Abstract: A system for controlling plasma position in extreme ultraviolet lithography light sources may include a vacuum chamber, a droplet generator to dispense a stream of droplets into the vacuum chamber, wherein the droplets are formed from a metal material, a laser light source to fire a plurality of laser pulses, including at least a first pulse and a second pulse, into the vacuum chamber, a sensor to detect an observed plasma position within the chamber, wherein the observed plasma position comprises a position at which the plurality of laser pulses vaporizes a droplet of the stream of droplets to produce a plasma that emits extreme ultraviolet radiation, and a first feedback loop connecting the sensor to the laser light source, wherein the first feedback loop adjusts a time delay between the first and second pulses to minimize a difference between the observed plasma position and a target plasma position.

Abstract: Some implementations described herein provide techniques and apparatuses for an extreme ultraviolet (EUV) radiation source that includes a backsplash-prevention system to reduce, minimize, and/or prevent the formation of tin (Sn) build-up in a tunnel structure of a collector flow ring that might otherwise be caused by the accumulation of Sn satellites. This reduces backsplash of Sn onto a collector of the EUV radiation source, increases the operational life of the collector (e.g., by increasing the time duration between cleaning and/or replacement of the collector), reduces downtime of the EUV radiation source, and/or enables the performance of the EUV radiation source to be sustained for longer time durations (e.g., by reducing, minimizing, and/or preventing the rate of Sn contamination of the collector), among other examples.

Abstract: Some implementations described herein provide techniques and apparatuses for an extreme ultraviolet (EUV) radiation source that includes a backsplash-prevention system to reduce, minimize, and/or prevent the formation of tin (Sn) build-up in a tunnel structure of a collector flow ring that might otherwise be caused by the accumulation of Sn satellites. This reduces backsplash of Sn onto a collector of the EUV radiation source, increases the operational life of the collector (e.g., by increasing the time duration between cleaning and/or replacement of the collector), reduces downtime of the EUV radiation source, and/or enables the performance of the EUV radiation source to be sustained for longer time durations (e.g., by reducing, minimizing, and/or preventing the rate of Sn contamination of the collector), among other examples.

Abstract: A system and a method for supplying target material in an EUV light source are provided. The system for supplying a target material comprises a priming assembly, a refill assembly and a droplet generator assembly. The priming is configured to transform the target material from a solid state to a liquid state. The refill assembly is in fluid communication with the priming assembly and configured to receive the target material in the liquid state from the priming assembly. Further, the refill assembly includes a purifier configured to purify the target material in the liquid state. The droplet generator assembly is configured to supply the target material in the liquid state from the refill assembly.

Abstract: A method for using an extreme ultraviolet radiation source is provided. The method includes assembling a first droplet generator onto a port of a vessel; ejecting a target droplet from the first droplet generator to a zone of excitation in front of a collector; emitting a laser toward the zone of excitation, such that the target droplet is heated by the laser to generate extreme ultraviolet (EUV) radiation; stopping the ejection of the target droplet; after stopping the ejection of the target droplet, disassembling the first droplet generator from the port of the vessel; after disassembling the first droplet generator from the port of the vessel, inserting a cleaning device into the vessel through the port; and cleaning the collector by using the cleaning device.

Abstract: A system and a method for supplying target material in an EUV light source are provided. The system for supplying a target material comprises a priming assembly, a refill assembly and a droplet generator assembly. The priming is configured to transform the target material from a solid state to a liquid state. The refill assembly is in fluid communication with the priming assembly and configured to receive the target material in the liquid state from the priming assembly. Further, the refill assembly includes a purifier configured to purify the target material in the liquid state. The droplet generator assembly is configured to supply the target material in the liquid state from the refill assembly.

Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a droplet generator with a nozzle and a piezoelectric structure coupled to the nozzle. The generator outputs groups of droplets. A control system applies a voltage waveform to the piezoelectric structure while the nozzle outputs the group of droplets. The waveform causes the droplets of the group to have a spread of velocities that results in the droplets coalescing into a single droplet prior to being irradiated by the laser.

Abstract: The present disclosure is directed to a modularized vessel droplet generator assembly (MGDVA) including a droplet generator assembly (DGA). Under a normal operation, the liquid fuel moves along an operation pathway extending through the DGA to eject or discharge the liquid fuel (e.g., liquid tin) from a nozzle of the DGA into a vacuum chamber. The liquid fuel in the vacuum chamber is then exposed to a laser generating an extreme ultra-violet (EUV) light. Under a service operation, the operation pathway is closed and a service pathway extending through the DGA is opened. A gas is introduced into the service pathway forming a gas-liquid interface between the gas and the liquid fuel. The gas-liquid interface is driven to an isolation valve directly adjacent to the DGA. In other words, the gas pushes back the liquid fuel to the isolation valve. Once the gas-liquid interface reaches the isolation valve, the isolation valve is closed isolating the DGA from the liquid fuel.

Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a droplet generator with a nozzle and a piezoelectric structure coupled to the nozzle. The generator outputs groups of droplets. A control system applies a voltage waveform to the piezoelectric structure while the nozzle outputs the group of droplets. The waveform causes the droplets of the group to have a spread of velocities that results in the droplets coalescing into a single droplet prior to being irradiated by the laser.

Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.

Abstract: A method for using an extreme ultraviolet radiation source is provided. The method includes assembling a first droplet generator onto a port of a vessel; ejecting a target droplet from the first droplet generator to a zone of excitation in front of a collector; emitting a laser toward the zone of excitation, such that the target droplet is heated by the laser to generate extreme ultraviolet (EUV) radiation; stopping the ejection of the target droplet; after stopping the ejection of the target droplet, disassembling the first droplet generator from the port of the vessel; after disassembling the first droplet generator from the port of the vessel, inserting a cleaning device into the vessel through the port; and cleaning the collector by using the cleaning device.

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become energized and emit extreme ultraviolet radiation. A collector reflects the extreme ultraviolet radiation toward a photolithography target. The photolithography system isolates a source of droplets from oxidants to prevent the oxidation of the nozzle or the formation of metal oxides on the nozzle, both of which can adversely affect an ability of the nozzle to generate a sufficient amount of droplets and/or direct the droplets in a desired direction.