Abstract: An exemplary gate stack includes a gate dielectric (e.g., a high-k dielectric layer over an interfacial layer) and a gate electrode (e.g., a work function layer over the high-k dielectric layer, a cap over the work function layer, and a bulk fill layer over the cap). The gate stack wraps and/or surrounds a first semiconductor layer disposed over a second semiconductor layer. The gate dielectric and the work function layer (and not the cap and/or the bulk fill layer) fill a space between the first semiconductor layer and the second semiconductor layer. A ratio of oxygen in outer portions of the gate stack to inner portions of the gate stack may be about 1 to about 1.25. A thickness of the work function layer at inner portions of the gate stack may be less than a thickness of the work function layer at outer portions of the gate stack.

Abstract: An exemplary method for forming a gate stack of a multigate device includes forming a gate dielectric over a channel layer and forming a gate electrode over the gate dielectric. Forming the gate electrode includes forming a work function layer over the gate dielectric and forming a cap over the work function layer. Forming the cap includes forming a metal nitride layer over the work function layer and forming a silicon-comprising layer over the metal nitride layer. Forming the gate electrode includes forming a fluorine-free tungsten layer over the silicon-comprising layer of the cap without breaking vacuum. Forming the fluorine-free tungsten layer over the silicon-comprising layer includes co-flowing a tungsten-comprising precursor (e.g., WCl5) and a hydrogen-comprising precursor (e.g., H2).

Abstract: Electronic system level (ESL) design and verification of the present disclosure is utilized to provide an electronic simulation and modeling of function safety and fault management of an electronic device. A method for simulating a safety circuit includes providing an electronic architectural design to perform one or more functional behaviors of the electronic device in accordance with an electronic design specification. The method further includes modeling the safety circuit of the electronic architectural design and one or more other electronic circuits of the electronic architectural design that communicate with the safety circuit. The method further includes simulating, using the modeling, operation of the safety circuit while the electronic architectural design is performing the one or more functional behaviors. The method also includes determining whether the simulated operation of the safety circuit satisfies the electronic design specification.

Abstract: An in-plane magnetized spin-orbit magnetic device is provided. The in-plane magnetized spin-orbit magnetic device includes a heavy metal layer, an antiferromagnetic layer, and a magnetic tunnel junction. The antiferromagnetic layer is disposed on the heavy metal layer, and the magnetic tunnel junction is disposed on the antiferromagnetic layer. The magnetic tunnel junction includes a free layer, a barrier layer, and a pinned layer. The barrier layer is disposed on the free layer, and the pinned layer is disposed on the barrier layer. A film surface shape of the free layer is a rounded rectangle.

Abstract: A magnetic random access memory (MRAM) structure is provided. The MRAM structure includes a first write electrode, a first magnetic tunnel junction (MTJ) stack, a voltage control electrode, a second MTJ stack, and a second write electrode. The first MTJ stack includes a first free layer disposed on the first write electrode, a first tunnel barrier layer disposed on the first free layer, and a first fixed layer disposed on the first tunnel barrier layer. The voltage control electrode is disposed on the first MTJ stack. The second MTJ stack includes a second fixed layer disposed on the voltage control electrode, a second tunnel barrier layer disposed on the second fixed layer, and a second free layer disposed on the second tunnel barrier layer. The second write electrode is disposed on the second MTJ stack.

Abstract: An in-plane magnetized spin-orbit magnetic device is provided. The in-plane magnetized spin-orbit magnetic device includes a heavy metal layer, an upper electrode and a magnetic tunnel junction. The magnetic tunnel junction is disposed between the heavy metal layer and the upper electrode. The magnetic tunnel junction includes a free layer and a pinned layer. The free layer is disposed on the heavy metal layer, and the free layer has a first film plane area. The pinned layer is disposed on the free layer, and the pinned layer has a second film plane area. There is a preset angle between a long axis direction of a film plane shape of the free layer and a long axis direction of a film plane shape of the pinned layer, and the first film plane area is larger than the second film plane area.

Abstract: An in-plane magnetized spin-orbit magnetic device is provided. The in-plane magnetized spin-orbit magnetic device includes a heavy metal layer, an antiferromagnetic layer, and a magnetic tunnel junction. The antiferromagnetic layer is disposed on the heavy metal layer, and the magnetic tunnel junction is disposed on the antiferromagnetic layer. The magnetic tunnel junction includes a free layer, a barrier layer, and a pinned layer. The barrier layer is disposed on the free layer, and the pinned layer is disposed on the barrier layer. A film surface shape of the free layer is a rounded rectangle.

Abstract: An in-plane magnetized spin-orbit magnetic device is provided. The in-plane magnetized spin-orbit magnetic device includes a heavy metal layer, an upper electrode and a magnetic tunnel junction. The magnetic tunnel junction is disposed between the heavy metal layer and the upper electrode. The magnetic tunnel junction includes a free layer and a pinned layer. The free layer is disposed on the heavy metal layer, and the free layer has a first film plane area. The pinned layer is disposed on the free layer, and the pinned layer has a second film plane area. There is a preset angle between a long axis direction of a film plane shape of the free layer and a long axis direction of a film plane shape of the pinned layer, and the first film plane area is larger than the second film plane area.

Abstract: A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The magnetic tunnel junction comprises a free layer, a tunneling barrier layer, and pinned layer. The tunneling barrier layer is disposed on the free layer. The pinned layer is disposed on the tunneling barrier layer. A film plane area of the free layer is greater than a film plane area of the tunneling barrier layer and a film plane area of the pinned layer.

Abstract: A biomolecule magnetic sensor configured to sense magnetic beads attached with biomolecules includes an adsorption pad, a magnetic field line generator and at least one magnetic sensor. The adsorption pad is configured to adsorb the magnetic beads. The magnetic field line generator is configured to generate a plurality of first magnetic field lines, and at least one of the first magnetic field lines passes through the magnetic beads along a first direction to induce a plurality of second magnetic field lines, wherein the magnetic field line generator is disposed between the adsorption pad and the magnetic sensor in the first direction. The magnetic sensor is configured to sense a magnetic field component of at least one of the second magnetic field lines in a second direction. A second shift is provided between the magnetic sensor and the adsorption pad in the second direction.

Abstract: A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The magnetic tunnel junction comprises a free layer, a tunneling barrier layer, and pinned layer. The tunneling barrier layer is disposed on the free layer. The pinned layer is disposed on the tunneling barrier layer. A film plane area of the free layer is greater than a film plane area of the tunneling barrier layer and a film plane area of the pinned layer.

Abstract: A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The first stray field applying layer provides a stray magnetic field parallel to a film plane. The first antiferromagnetic layer contacts the first stray field applying layer to define the direction of the magnetic moment in the first stray field applying layer.

Abstract: A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The first stray field applying layer provides a stray magnetic field parallel to a film plane. The first antiferromagnetic layer contacts the first stray field applying layer to define the direction of the magnetic moment in the first stray field applying layer.

Abstract: A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The first stray field applying layer provides a stray magnetic field parallel to a film plane. The first antiferromagnetic layer contacts the first stray field applying layer to define the direction of the magnetic moment in the first stray field applying layer.

Abstract: A biomolecule magnetic sensor configured to sense magnetic beads attached with biomolecules includes an adsorption pad, a magnetic field line generator and at least one magnetic sensor. The adsorption pad is configured to adsorb the magnetic beads. The magnetic field line generator is configured to generate a plurality of first magnetic field lines, and at least one of the first magnetic field lines passes through the magnetic beads along a first direction to induce a plurality of second magnetic field lines, wherein the magnetic field line generator is disposed between the adsorption pad and the magnetic sensor in the first direction. The magnetic sensor is configured to sense a magnetic field component of at least one of the second magnetic field lines in a second direction. A second shift is provided between the magnetic sensor and the adsorption pad in the second direction.

Abstract: A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The first stray field applying layer provides a stray magnetic field parallel to a film plane. The first antiferromagnetic layer contacts the first stray field applying layer to define the direction of the magnetic moment in the first stray field applying layer.

Abstract: A sliding mechanism with locking function includes a slide frame and a resilient plate. The slide frame includes opposite front and rear ends and an end plate formed at the front end and extending outward from the front end in a transverse direction relative to a longitudinal length of the slide frame. The end plate is formed with a through hole. The resilient plate has a width smaller than that of the slide frame, a rear section fixed to the slide frame and a front section opposite to the rear section and formed with a locking element exposed to an exterior of the through hole in the end plate in such a manner that the locking element is movable limitedly and resiliently in the transverse direction upon an external force applied thereto.

Abstract: A positioning device for a sliding mechanism includes slidably connected exterior plate, intermediate plate and interior plate, characterized by the exterior plate having a stop block; the intermediate plate formed with a through hole, including having a pivot element mounted pivotally adjacent to the through hole and having a projection extending through the hole to engage the stop block, thereby preventing sliding action between the exterior and intermediate plates, a resilient element having a free end in contact with the rear end of the pivot element; and the interior plate having a push element with cam face; when an external force applied on so as to cause sliding action between the interior plate and the intermediate plate results in abutment of the cam face against the resilient element, thereby deforming the resilient element and rotating the pivot element about its axis, thereby disengaging the projection from the stop block.

Abstract: A positioning device for a sliding mechanism that includes exterior, intermediate and interior plates, each plate defining inner and outer side surfaces, the positioning device is characterized by: the intermediate plate having a stop block formed on the inner side surface; and the interior plate including an elongated release rod that is mounted movably on the outer side surface and that has a limit notch receiving the block, and a resilient element engaging the propeller portion for restricting a longitudinal movement of the rod, the interior plate having a position limiting unit constituted by two limiting stubs mounted movably on the outer side surface and having pointed free ends and a biasing element for biasing the limiting stubs in such a manner that the pointed free ends extend into the notch to contact opposite ends of the block, thereby preventing relative movement between the interior and intermediate plates.

Abstract: A sliding mechanism with locking function includes a slide frame and a resilient plate. The slide frame includes opposite front and rear ends and an end plate formed at the front end and extending outward from the front end in a transverse direction relative to a longitudinal length of the slide frame. The end plate is formed with a through hole. The resilient plate has a width smaller than that of the slide frame, a rear section fixed to the slide frame and a front section opposite to the rear section and formed with a locking element exposed to an exterior of the through hole in the end plate in such a manner that the locking element is movable limitedly and resiliently in the transverse direction upon an external force applied thereto.