Patents by Inventor Hsin He HUANG

Hsin He HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11923328
    Abstract: A semiconductor device includes a semiconductor die having a first surface and a second surface opposite to the first surface, a plurality of first real conductive pillars in a first region on the first surface, and a plurality of supporters in a second region adjacent to the first region. An area density of the plurality of supporters in the second region is in a range of from about 50% to about 100% to an area density of the plurality of first real conductive pillars in the first region. A method for manufacturing a semiconductor package including the semiconductor device is also disclosed in the present disclosure.
    Type: Grant
    Filed: November 9, 2021
    Date of Patent: March 5, 2024
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventor: Hsin He Huang
  • Publication number: 20220068865
    Abstract: A semiconductor device includes a semiconductor die having a first surface and a second surface opposite to the first surface, a plurality of first real conductive pillars in a first region on the first surface, and a plurality of supporters in a second region adjacent to the first region. An area density of the plurality of supporters in the second region is in a range of from about 50% to about 100% to an area density of the plurality of first real conductive pillars in the first region. A method for manufacturing a semiconductor package including the semiconductor device is also disclosed in the present disclosure.
    Type: Application
    Filed: November 9, 2021
    Publication date: March 3, 2022
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventor: Hsin He HUANG
  • Patent number: 11171105
    Abstract: A semiconductor device includes a semiconductor die having a first surface and a second surface opposite to the first surface, a plurality of first real conductive pillars in a first region on the first surface, and a plurality of supporters in a second region adjacent to the first region. An area density of the plurality of supporters in the second region is in a range of from about 50% to about 100% to an area density of the plurality of first real conductive pillars in the first region. A method for manufacturing a semiconductor package including the semiconductor device is also disclosed in the present disclosure.
    Type: Grant
    Filed: November 13, 2019
    Date of Patent: November 9, 2021
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventor: Hsin He Huang
  • Publication number: 20210143117
    Abstract: A semiconductor device includes a semiconductor die having a first surface and a second surface opposite to the first surface, a plurality of first real conductive pillars in a first region on the first surface, and a plurality of supporters in a second region adjacent to the first region. An area density of the plurality of supporters in the second region is in a range of from about 50% to about 100% to an area density of the plurality of first real conductive pillars in the first region. A method for manufacturing a semiconductor package including the semiconductor device is also disclosed in the present disclosure.
    Type: Application
    Filed: November 13, 2019
    Publication date: May 13, 2021
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventor: Hsin He HUANG