Patents by Inventor Hsin-Hsing Liao

Hsin-Hsing Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RFIC with on-chip multiple band power amplifiers
    Patent number: 7890079
    Abstract: A radio frequency integrated circuit (RFIC) includes a silicon substrate, CMOS processing circuitry, and a bipolar power amplifier module. The CMOS processing circuitry is on the silicon substrate. The bipolar power amplifier module is on the silicon substrate and is operable in a 5 GHz frequency band.
    Type: Grant
    Filed: June 5, 2007
    Date of Patent: February 15, 2011
    Assignee: Broadcom Corporation
    Inventors: Arya Reza Behzad, Payman Hosseinzadeh Shanjani, Hsin-Hsing Liao, Hao Jiang
  • RFIC with dynamically controlled power amplifier
    Patent number: 7787839
    Abstract: A radio frequency (RF) front-end includes a power amplifier module and a power amplifier control module. The power amplifier module is coupled to amplify an outbound RF signal in accordance with a control signal to produce an amplified outbound RF signal. The power amplifier control module is coupled to generate the control signal based on at least one of forward power of the amplified outbound RF signal and reflected power of the amplified outbound RF signal.
    Type: Grant
    Filed: April 16, 2007
    Date of Patent: August 31, 2010
    Assignee: Broadcom Corporation
    Inventor: Hsin-Hsing Liao
  • ON-CHIP DIRECTIONAL COUPLER FOR RF TRANSMITTER OUTPUT POWER MEASUREMENT
    Publication number: 20080299921
    Abstract: An integrated circuit radio transceiver and method therefor include circuitry for generating and power amplifying an outgoing RF signal to produce a power amplified outgoing signal, conducting the power amplified outgoing signal down a transmission path that is disposed substantially parallel to a directional coupler formed on a metallization layer of the integrated circuit, producing a sensed signal level sensed in the directional coupler to a power detector and determining the forward output power based upon the sensed signal level.
    Type: Application
    Filed: June 26, 2007
    Publication date: December 4, 2008
    Applicant: BROADCOM CORPORATION
    Inventor: Hsin-Hsing Liao
  • RFIC with on-chip multiple band power amplifiers
    Publication number: 20080136514
    Abstract: A radio frequency integrated circuit (RFIC) includes a silicon substrate, CMOS processing circuitry, and a bipolar power amplifier module. The CMOS processing circuitry is on the silicon substrate. The bipolar power amplifier module is on the silicon substrate and is operable in a 5 GHz frequency band.
    Type: Application
    Filed: June 5, 2007
    Publication date: June 12, 2008
    Applicant: Broadcom Corporation, a California Corporation
    Inventors: Arya Reza Behzad, Payman Hosseinzadeh Shanjani, Hsin-Hsing Liao, Hao Jiang
  • RFIC with dynamically controlled power amplifier
    Publication number: 20080139128
    Abstract: A radio frequency (RF) front-end includes a power amplifier module and a power amplifier control module. The power amplifier module is coupled to amplify an outbound RF signal in accordance with a control signal to produce an amplified outbound RF signal. The power amplifier control module is coupled to generate the control signal based on at least one of forward power of the amplified outbound RF signal and reflected power of the amplified outbound RF signal.
    Type: Application
    Filed: April 16, 2007
    Publication date: June 12, 2008
    Applicant: Broadcom Corporation, a California Corporation
    Inventor: Hsin-Hsing Liao