Abstract: Methods of manufacturing electronic devices are described. Embodiments of the present disclosure advantageously provide methods of manufacturing electronic devices that meet reduced thickness, reduced leakage, lower thermal budget, and Vt requirements (including multi-Vt), and have improved device performance and reliability. The method comprises forming a P-dipole stack and an N-dipole stack on a semiconductor substrate by: depositing an interfacial layer (e.g., silicon oxide (SiOx)) on the top surface of the channel; depositing a hafnium-containing layer comprising hafnium oxide (HfOx) and having a thickness of less than or equal to 5 ? on the interfacial layer; and depositing a dipole layer comprising lanthanum nitride (LaN) on the hafnium-containing layer.

Abstract: Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. Embodiments of the disclosure advantageously provide electronic devices which meet reduced thickness, lower thermal budget, and Vt requirements, and have improved device performance and reliability. The electronic devices described herein comprise a source region, a drain region, and a channel separating the source region and the drain region, an interfacial layer on a top surface of the channel, a high-? dielectric layer on the interfacial layer, a dipole layer on the high-? dielectric layer, and a capping layer on the dipole layer. In some embodiments, the dipole layer comprises a metal oxynitride (MON), such as aluminum oxynitride (AlON). In some embodiments, the methods comprise annealing the substrate to drive atoms from the dipole layer into one or more of the interfacial layer or the high-? dielectric layer.

Abstract: In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.

Abstract: A capacitive touch system and a sensing method thereof are disclosed. The capacitive touch system includes a touch panel including a plurality of driving electrodes and a plurality of sensing electrodes; a touch control chip; and an external device configured to transmit data to the touch control chip. In a position detection mode, the touch control chip drives the driving electrodes, reads a sensing signal from the sensing electrodes, and determines a position of a touch according to the sensing signal. In a data receiving mode, the touch control chip receives the data transmitted by the external device after a time delay period. In the capacitive touch system and the sensing method thereof, the position detection mode and the data receiving mode can be sequentially performed by delaying the time period.

Abstract: A capacitive touch system and a sensing method thereof are disclosed. The capacitive touch system includes a touch panel; a touch control chip; and an active pen which includes a receiving part, a transmitting part, a control unit, and a pressure sensing element. The control unit controls the transmitting unit to output a pen driving signal according to a pen sensing signal. The pressure sensing element detects a pen pressure signal. The control unit outputs a voltage signal in responsive to the pen pressure signal after a time delay period. In the capacitive touch system and the sensing method thereof, the active pan is not required to be paired with the touch panel.

Abstract: A touch detection method is applied to a touch panel including sensing units and includes: detecting sensing values corresponding to the sensing units; selecting a first sensing value that is a local maximum among the sensing values; determining a first sensing unit corresponding to the first sensing value among the sensing units; selecting from the sensing units a second sensing unit located at the first side of the first sensing unit; selecting from the sensing values a second sensing value corresponding to the second sensing unit; and generating a touch coordinate according to the first sensing value, the second sensing value, a touch sensing value distribution model, and the coordinate of the first sensing unit.

Abstract: A capacitive touch system and a sensing method thereof are disclosed. The capacitive touch system includes a touch panel including a plurality of driving electrodes and a plurality of sensing electrodes; a touch control chip; and an external device configured to transmit data to the touch control chip. In a position detection mode, the touch control chip drives the driving electrodes, reads a sensing signal from the sensing electrodes, and determines a position of a touch according to the sensing signal. In a data receiving mode, the touch control chip receives the data transmitted by the external device after a time delay period. In the capacitive touch system and the sensing method thereof, the position detection mode and the data receiving mode can be sequentially performed by delaying the time period.

Abstract: A capacitive touch system and a sensing method thereof are disclosed. The capacitive touch system includes a touch panel; a touch control chip; and an active pen which includes a receiving part, a transmitting part, a control unit, and a pressure sensing element. The control unit controls the transmitting unit to output a pen driving signal according to a pen sensing signal. The pressure sensing element detects a pen pressure signal. The control unit outputs a voltage signal in responsive to the pen pressure signal after a time delay period. In the capacitive touch system and the sensing method thereof, the active pan is not required to be paired with the touch panel.

Abstract: A touch display system includes a touch panel; a touch control chip configured to transmit a driving signal to the touch panel; an active pen configured to transmit a signal based on the driving signal of the touch control chip, the signal including two signal segments that are called a position signal and an ID signal, the touch control chip resolving the signal transmitted by the active pen to obtain an ID data carried by the ID signal and inquiring a property of the active pen corresponding to the ID data; and a display panel configured to display traces in accordance with the property of the active pen. Similar to the usage of a traditional marker pen, such an active panel is easily to be used by a user.

Abstract: A touch detection method is applied to a touch panel including sensing units and includes: detecting sensing values corresponding to the sensing units; selecting a first sensing value that is a local maximum among the sensing values; determining a first sensing unit corresponding to the first sensing value among the sensing units; selecting from the sensing units a second sensing unit located at the first side of the first sensing unit; selecting from the sensing values a second sensing value corresponding to the second sensing unit; and generating a touch coordinate according to the first sensing value, the second sensing value, a touch sensing value distribution model, and the coordinate of the first sensing unit.