Patents by Inventor Hsin-Hsueh HSIEH

Hsin-Hsueh HSIEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating high voltage transistor
    Patent number: 8501603
    Abstract: A method for fabricating a high voltage transistor includes the following steps. Firstly, a substrate is provided. A first sacrificial oxide layer and a hard mask layer are sequentially formed over the substrate. The hard mask layer is removed, thereby exposing the first sacrificial oxide layer. Then, a second sacrificial oxide layer is formed on the first sacrificial oxide layer. Afterwards, an ion-implanting process is performed to introduce a dopant into the substrate through the second sacrificial oxide layer and the first sacrificial oxide layer, thereby producing a high voltage first-type field region of the high voltage transistor.
    Type: Grant
    Filed: June 15, 2011
    Date of Patent: August 6, 2013
    Assignee: United Microelectronics Corp.
    Inventors: Chih-Kuang Chang, Hsin-Hsueh Hsieh
  • METHOD FOR FABRICATING HIGH VOLTAGE TRANSISTOR
    Publication number: 20120322247
    Abstract: A method for fabricating a high voltage transistor includes the following steps. Firstly, a substrate is provided. A first sacrificial oxide layer and a hard mask layer are sequentially formed over the substrate. The hard mask layer is removed, thereby exposing the first sacrificial oxide layer. Then, a second sacrificial oxide layer is formed on the first sacrificial oxide layer. Afterwards, an ion-implanting process is performed to introduce a dopant into the substrate through the second sacrificial oxide layer and the first sacrificial oxide layer, thereby producing a high voltage first-type field region of the high voltage transistor.
    Type: Application
    Filed: June 15, 2011
    Publication date: December 20, 2012
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chih-Kuang CHANG, Hsin-Hsueh HSIEH