Patents by Inventor Hsin-Huang Lin

Hsin-Huang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230246083
    Abstract: One or more active region structures each protrude vertically out of a substrate in a vertical direction and each extend horizontally in a first horizontal direction. A source/drain component is disposed over the one or more active region structures in the vertical direction. A source/drain contact is disposed over the source/drain component in the vertical direction. The source/drain contact includes a bottom portion and a top portion. A protective liner is disposed on side surfaces of the top portion of the source/drain contact but not on side surfaces of the bottom portion of the source/drain contact.
    Type: Application
    Filed: April 10, 2023
    Publication date: August 3, 2023
    Inventors: Kuo-Chiang Tsai, Hsin-Huang Lin, Jyh-Huei Chen
  • Patent number: 11626495
    Abstract: One or more active region structures each protrude vertically out of a substrate in a vertical direction and each extend horizontally in a first horizontal direction. A source/drain component is disposed over the one or more active region structures in the vertical direction. A source/drain contact is disposed over the source/drain component in the vertical direction. The source/drain contact includes a bottom portion and a top portion. A protective liner is disposed on side surfaces of the top portion of the source/drain contact but not on side surfaces of the bottom portion of the source/drain contact.
    Type: Grant
    Filed: February 26, 2021
    Date of Patent: April 11, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kuo-Chiang Tsai, Hsin-Huang Lin, Jyh-Huei Chen
  • Publication number: 20220278211
    Abstract: One or more active region structures each protrude vertically out of a substrate in a vertical direction and each extend horizontally in a first horizontal direction. A source/drain component is disposed over the one or more active region structures in the vertical direction. A source/drain contact is disposed over the source/drain component in the vertical direction. The source/drain contact includes a bottom portion and a top portion. A protective liner is disposed on side surfaces of the top portion of the source/drain contact but not on side surfaces of the bottom portion of the source/drain contact.
    Type: Application
    Filed: February 26, 2021
    Publication date: September 1, 2022
    Inventors: Kuo-Chiang Tsai, Hsin-Huang Lin, Jyh-Huei Chen