Abstract: A mask for use in a semiconductor lithography process includes a substrate, a mask pattern disposed on the substrate, and a light absorbing border surrounding the mask pattern. The light absorbing border is inset from at least two edges of the substrate to define a peripheral region outside of the light absorbing border. In some designs, a first peripheral region extends from an outer perimeter of the light absorbing border to a first edge of the substrate, and a second peripheral region that extends from the outer perimeter of the light absorbing border to a second edge of the substrate, where the first edge of the substrate and the second edge of the substrate are on opposite sides of the mask pattern.

Abstract: The disclosure provides a semiconductor structure and a method of forming the same. The semiconductor structure includes a base pattern including a channel region and a drain region, a first semiconductor layer on the channel region of the base pattern, and a gate structure on the first semiconductor layer. The gate structure includes a first stack disposed on the first semiconductor layer and a second stack disposed on the first stack. The first stack includes a first sidewall adjacent to the drain region and a second sidewall opposite to the first sidewall in a first direction parallel to a top surface of the base pattern. The first sidewall is at a first distance from the second stack in the first direction, and the second sidewall is at a second distance from the second stack in the first direction. The first distance is greater than the second distance.

Abstract: A method of making a semiconductor device includes forming at least one fiducial mark on a photomask. The method further includes defining a pattern including a plurality of sub-patterns on the photomask in a pattern region. The defining the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: A flexible encapsulating material, a method for preparing the flexible encapsulating material, and an encapsulating method using the flexible encapsulating material are provided. The flexible encapsulating material includes an epoxy resin represented by a Formula (1), a curing agent, and a curing accelerator and optionally includes a coupling agent, wherein based on 100 parts by weight of a total usage amount of the epoxy resin (A), the curing agent (B), and the curing accelerator (C), a usage amount of the epoxy resin (A) is 85 parts by weight or more, and based on 100 parts by weight of the usage amount of the epoxy resin (A), a usage amount of the coupling agent (D) is 0 to 5 parts by weight.

Abstract: A flexible encapsulating material, a method for preparing the flexible encapsulating material, and an encapsulating method using the flexible encapsulating material are provided. The flexible encapsulating material includes an epoxy resin represented by a Formula (1), a curing agent, and a curing accelerator and optionally includes a coupling agent, wherein based on 100 parts by weight of a total usage amount of the epoxy resin (A), the curing agent (B), and the curing accelerator (C), a usage amount of the epoxy resin (A) is 85 parts by weight or more, and based on 100 parts by weight of the usage amount of the epoxy resin (A), a usage amount of the coupling agent (D) is 0 to 5 parts by weight.

Abstract: The present invention provides a conductive composition solution, comprising: an (A) conductive polymer, comprising: a ?-conjugated conductive polymer and a multivalent anionic polymer, wherein the multivalent anionic polymer is mixed with the ?-conjugated conductive polymer; a (B) alkoxy silane, having a weight percentage to the conductive composition solution in a range of 1-5.5 wt %; and a (C) solvent, comprising: a low-boiling-point solvent, having a boiling point in a range of 55-120° C.; a high-boiling-point solvent, having a boiling point in a range of 170-250° C., and being soluble in water; and water.

Abstract: A carbazole derivative is provided.

Abstract: A carbazole derivative is provided.

Abstract: A Pseudomonas sp. strain TKU015 is deposited under DSMZ GmbH (Deutsche Sammlung von Mikroorganismen und Zellkulturen GmbH) Number DSM 21747). The Pseudomonas sp. strain TKU015 can be used to produce chitinase, chitosanase and nattokinase. A method of producing chitinase, chitosanase and nattokinases can use the Pseudomonas sp. strain TKU015.

Abstract: A Pseudomonas sp. strain TKU015 is deposited under DSMZ GmbH (Deutsche Sammlung von Mikroorganismen und Zellkulturen GmbH) Number DSM 21747). The Pseudomonas sp. strain TKU015 can be used to produce chitinase, chitosanase and nattokinase. A method of producing chitinase, chitosanase and nattokinases can use the Pseudomonas sp. strain TKU015.