Patents by Inventor Hsin-Jen Yu

Hsin-Jen Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20230317779
    Abstract: A method for fabricating minimal fin length includes the steps of first forming a fin-shaped structure extending along a first direction on a substrate, forming a first single-diffusion break (SDB) trench and a second SDB trench extending along a second direction to divide the fin-shaped structure into a first portion, a second portion, and a third portion, and then performing a fin-cut process to remove the first portion and the third portion.
    Type: Application
    Filed: June 7, 2023
    Publication date: October 5, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chien-Heng Liu, Chia-Wei Huang, Hsin-Jen Yu, Yung-Feng Cheng, Ming-Jui Chen
  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20230317778
    Abstract: A method for fabricating minimal fin length includes the steps of first forming a fin-shaped structure extending along a first direction on a substrate, forming a first single-diffusion break (SDB) trench and a second SDB trench extending along a second direction to divide the fin-shaped structure into a first portion, a second portion, and a third portion, and then performing a fin-cut process to remove the first portion and the third portion.
    Type: Application
    Filed: June 7, 2023
    Publication date: October 5, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chien-Heng Liu, Chia-Wei Huang, Hsin-Jen Yu, Yung-Feng Cheng, Ming-Jui Chen
  • Semiconductor device with a single diffusion break structure having a sidewall aligned with a gate sidewall
    Patent number: 11715759
    Abstract: A method for fabricating minimal fin length includes the steps of first forming a fin-shaped structure extending along a first direction on a substrate, forming a first single-diffusion break (SDB) trench and a second SDB trench extending along a second direction to divide the fin-shaped structure into a first portion, a second portion, and a third portion, and then performing a fin-cut process to remove the first portion and the third portion.
    Type: Grant
    Filed: December 11, 2020
    Date of Patent: August 1, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chien-Heng Liu, Chia-Wei Huang, Hsin-Jen Yu, Yung-Feng Cheng, Ming-Jui Chen
  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20220157933
    Abstract: A method for fabricating minimal fin length includes the steps of first forming a fin-shaped structure extending along a first direction on a substrate, forming a first single-diffusion break (SDB) trench and a second SDB trench extending along a second direction to divide the fin-shaped structure into a first portion, a second portion, and a third portion, and then performing a fin-cut process to remove the first portion and the third portion.
    Type: Application
    Filed: December 11, 2020
    Publication date: May 19, 2022
    Inventors: Chien-Heng Liu, Chia-Wei Huang, Hsin-Jen Yu, Yung-Feng Cheng, Ming-Jui Chen