Abstract: A resonance counterweight structure for audio effect article includes a hollow counterweight main body and an assembling section connected with the counterweight main body. The assembling section can be mounted in a predetermined position of a musical instrument. The counterweight main body at least includes an upper wall, a lower wall and a peripheral wall connected between the upper and lower walls. The upper wall, the lower wall and the peripheral wall define a chamber of the counterweight main body. At least one counterweight fine-adjustment unit is received in the chamber. The counterweight main body and the counterweight fine-adjustment unit help the audio effect article to modify the music so as to achieve more idealistic timbre effect. A player can more diversely select or replace the counterweight structure, whereby one single musical instrument can selectively output different timbre effects according to the requirements of different playing situations.

Abstract: A resonance counterweight structure for audio effect article includes a hollow counterweight main body and an assembling section connected with the counterweight main body. The assembling section can be mounted in a predetermined position of a musical instrument. The counterweight main body at least includes an upper wall, a lower wall and a peripheral wall connected between the upper and lower walls. The upper wall, the lower wall and the peripheral wall define a chamber of the counterweight main body. At least one counterweight fine-adjustment unit is received in the chamber. The counterweight main body and the counterweight fine-adjustment unit help the audio effect article to modify the music so as to achieve more idealistic timbre effect. A player can more diversely select or replace the counterweight structure, whereby one single musical instrument can selectively output different timbre effects according to the requirements of different playing situations.

Abstract: A method for applying developer over a semiconductor wafer is provided. The method includes moving a nozzle over the center of the semiconductor wafer. The nozzle extends across the semiconductor wafer. The method also includes rotating the semiconductor wafer by a dispensing rotation angle that is less than 180 degrees. The method further includes dispensing developer over the semiconductor wafer relative to alignment marks formed on the semiconductor wafer while the semiconductor wafer is rotated by the dispensing rotation angle.