Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.

Abstract: A capacitive stealth composite structure includes a plurality of structural layers stacked in a thickness direction, and the number of layers of the structural layers is three or more, wherein each of the structural layers consists of a plurality of electromagnetic wave absorbing patterns and a plurality of insulation patterns alternately arranged in a horizontal direction. The electromagnetic wave absorbing patterns in each of the structural layers are aligned with the insulation patterns of an adjacent structural layer, and the insulation patterns in each of the structural layers are aligned with the electromagnetic wave absorbing patterns of an adjacent structural layer.

Abstract: A seawater battery includes an anode and a cathode corresponding to the anode. The cathode cooperates with the anode to produce a current and includes a metal substrate and a mixture coating layer. The mixture coating layer covered on the metal substrate includes a conductive polymer material and a plurality of carbon nanotubes mixed with the conductive polymer material.

Abstract: A seawater battery includes an anode and a cathode corresponding to the anode. The cathode cooperates with the anode to produce a current and includes a metal substrate and a mixture coating layer. The mixture coating layer covered on the metal substrate includes a conductive polymer material and a plurality of carbon nanotubes mixed with the conductive polymer material.