Abstract: A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.

Abstract: An optical module includes a base, a holding component, an optical element, and at least one detachable structure. The holding component is disposed on the base, in which a position of the holding component relative to the base along a first axial direction is adjustable. The optical element is disposed on the holding component. The detachable structure is extended from one of the base and the holding component to face another one of the base and the holding component, so as to limit a position of the holding component relative to the base along a second axial direction.

Abstract: A semiconductor die package includes a high dielectric constant (high-k) dielectric layer over a device region of a first semiconductor die that is bonded with a second semiconductor die in a wafer on wafer (WoW) configuration. A through silicon via (TSV) structure may be formed through the device region. The high-k dielectric layer has an intrinsic negative charge polarity that provides a coupling voltage to modify the electric potential in the device region. In particular, the electron carriers in high-k dielectric layer attracts hole charge carriers in device region, which suppresses trap-assist tunnels that result from surface defects formed during etching of the recess for the TSV structure. Accordingly, the high-k dielectric layer described herein reduces the likelihood of (and/or the magnitude of) current leakage in semiconductor devices that are included in the device region of the first semiconductor die.

Abstract: A lens includes a casing, a first lens group, a second lens group and a heat dissipating member. The first lens group is disposed in the casing and close to a first side of the casing. The second lens group is disposed in the casing and close to a second side of the casing, wherein the first side is opposite to the second side. The heat dissipating member is disposed at the second side of the casing and contacts the casing.

Abstract: A lens includes a casing, a first lens group, a second lens group and a heat dissipating member. The first lens group is disposed in the casing and close to a first side of the casing. The second lens group is disposed in the casing and close to a second side of the casing, wherein the first side is opposite to the second side. The heat dissipating member is disposed at the second side of the casing and contacts the casing.