Patents by Inventor Hsin-Kuei Lee

Hsin-Kuei Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor apparatus
    Patent number: 9368390
    Abstract: A method for fabricating a semiconductor apparatus including providing a first silicon substrate having a first contact, wherein providing the first silicon substrate comprises forming a silicide layer between the first silicon substrate and a first metal layer. The method further includes providing a second silicon substrate having a second contact comprising a second metal layer and placing the first contact in contact with the second contact. The method further includes heating the first and second metal layers to form a metallic alloy, whereby the metallic alloy bonds the first contact to the second contact.
    Type: Grant
    Filed: January 16, 2013
    Date of Patent: June 14, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chyi-Tsong Ni, I-Shi Wang, Hsin-Kuei Lee, Ching-Hou Su
  • SEMICONDUCTOR APPARATUS
    Publication number: 20130130496
    Abstract: A method for fabricating a semiconductor apparatus including providing a first silicon substrate having a first contact, wherein providing the first silicon substrate comprises forming a silicide layer between the first silicon substrate and a first metal layer. The method further includes providing a second silicon substrate having a second contact comprising a second metal layer and placing the first contact in contact with the second contact. The method further includes heating the first and second metal layers to form a metallic alloy, whereby the metallic alloy bonds the first contact to the second contact.
    Type: Application
    Filed: January 16, 2013
    Publication date: May 23, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chyi-Tsong NI, I-Shi WANG, Hsin-Kuei LEE, Ching-Hou SU
  • Semiconductor apparatus including a metal alloy between a first contact and a second contact
    Patent number: 8378490
    Abstract: A method of integrated circuit fabrication is provided, and more particularly fabrication of a semiconductor apparatus with a metallic alloy. An exemplary structure for a semiconductor apparatus comprises a first silicon substrate having a first contact comprising a silicide layer between the substrate and a first metal layer; a second silicon substrate having a second contact comprising a second metal layer; and a metallic alloy between the first metal layer of the first contact and the second metal layer of the second contact.
    Type: Grant
    Filed: March 15, 2011
    Date of Patent: February 19, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chyi-Tsong Ni, I-Shi Wang, Hsin-Kuei Lee, Ching-Hou Su
  • SEMICONDUCTOR APPARATUS
    Publication number: 20120235301
    Abstract: A method of integrated circuit fabrication is provided, and more particularly fabrication of a semiconductor apparatus with a metallic alloy. An exemplary structure for a semiconductor apparatus comprises a first silicon substrate having a first contact comprising a silicide layer between the substrate and a first metal layer; a second silicon substrate having a second contact comprising a second metal layer; and a metallic alloy between the first metal layer of the first contact and the second metal layer of the second contact.
    Type: Application
    Filed: March 15, 2011
    Publication date: September 20, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chyi-Tsong NI, I-Shi WANG, Hsin-Kuei LEE, Ching-Hou SU