Patents by Inventor Hsin-Lan Hsueh

Hsin-Lan Hsueh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Capacitor structure and method of manufacturing the same
    Patent number: 9627468
    Abstract: Provided is a capacitor structure including a substrate, a dielectric layer, a first conductive layer, and a cup-shaped capacitor. The dielectric layer is located on the substrate. The first conductive layer is located in the dielectric layer. The cup-shaped capacitor penetrates through the first conductive layer and is located in the dielectric layer. The cup-shaped capacitor includes a bottom electrode, a capacitor dielectric layer, and a top electrode. Two sidewalls of the bottom electrode are electrically connected to the first conductive layer. The capacitor dielectric layer covers a surface of the bottom electrode. The top electrode covers a surface of the capacitor dielectric layer. The capacitor dielectric layer is located between the top electrode and the bottom electrode. A top surface of the bottom electrode is lower than a top surface of the top electrode. Also the invention provides a method of manufacturing the capacitor structure.
    Type: Grant
    Filed: August 14, 2015
    Date of Patent: April 18, 2017
    Assignee: Powerchip Technology Corporation
    Inventors: Shyng-Yeuan Che, Hsin-Lan Hsueh
  • CAPACITOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20160351656
    Abstract: Provided is a capacitor structure including a substrate, a dielectric layer, a first conductive layer, and a cup-shaped capacitor. The dielectric layer is located on the substrate. The first conductive layer is located in the dielectric layer. The cup-shaped capacitor penetrates through the first conductive layer and is located in the dielectric layer. The cup-shaped capacitor includes a bottom electrode, a capacitor dielectric layer, and a top electrode. Two sidewalls of the bottom electrode are electrically connected to the first conductive layer. The capacitor dielectric layer covers a surface of the bottom electrode. The top electrode covers a surface of the capacitor dielectric layer. The capacitor dielectric layer is located between the top electrode and the bottom electrode. A top surface of the bottom electrode is lower than a top surface of the top electrode. Also the invention provides a method of manufacturing the capacitor structure.
    Type: Application
    Filed: August 14, 2015
    Publication date: December 1, 2016
    Inventors: Shyng-Yeuan Che, Hsin-Lan Hsueh