Abstract: High-voltage semiconductor devices with electrostatic discharge (ESD) protection and methods of fabrication are provided. The semiconductor devices include a plurality of transistors on a substrate patterned with one or more common gates extending across a portion of the substrate, and a plurality of first S/D contacts and a plurality of second S/D contacts associated with the common gate(s). The second S/D contacts are disposed over a plurality of carrier-doped regions within the substrate. One or more floating nodes are disposed above the substrate and, at least in part, between second S/D contacts to facilitate defining the plurality of carrier-doped regions within the substrate. For instance, the carrier-doped regions may be defined from a mask with a common carrier-region opening, with the floating node(s) intersecting the common carrier-region opening and facilitating defining, along with the common opening, the plurality of separate carrier-doped regions.

Abstract: A packaging device including a first semiconductor device, a thermal dissipating component, an encapsulation layer, a via, and a pad. The first semiconductor device includes a substrate, an active region, and an electrode. The active region is disposed between the substrate and the electrode. The substrate has a first surface opposite to the active region, and the electrode has a second surface opposite to the active region. The thermal dissipating component is disposed on the first surface of the substrate. The encapsulation layer encloses the second surface of the electrode and a part of the thermal dissipating component, such that another part of the thermal dissipating component is exposed by the encapsulation layer. The pad is disposed on the encapsulation layer. The via is disposed in the encapsulation layer and connects the pad to the electrode.

Abstract: A package structure includes a first conduction layer, a second conduction layer, and an isolation layer. The first conduction layer includes a plurality of first portions, and the second conduction layer includes a plurality of portions. The isolation layer is disposed between the first conduction layer and the second conduction layer, and the isolation layer is composed of one of nitride and oxide mixed with at least one of epoxy and polymer.

Abstract: A semiconductor device includes a substrate and a chip. The substrate has a first conduction layer, a second conduction layer, and an isolation layer disposed between the first conduction layer and the second conduction layer. The first conductive layer has a first portion and a second portion spaced apart from the first portion, and each of the first portion and the second portion includes a main part and a plurality of extension parts extending from the main part. The chip is disposed on the extension parts of the first portion and the second portion of the first conductive layer.

Abstract: A supervised training device and method for training a neural network, and a supervised classification method and device based on the neural network are provided. The training device includes a storage unit and a processor. The processor accesses and executes a sampling module, a labelling module and a training module in the storage unit. The sampling module samples a first image and a second image from a first dataset. The labelling module tags the first image in response to a first control instruction to generate a first tagged image, and generates label data according to the first tagged image and the second image. The training module trains the neural network according to the label data.

Abstract: A wound treatment recommendation method includes: storing a database; receiving a wound characterization record; generating a current data sequence according to the wound observation data in the wound characterization record; calculating similarity parameters of the current data sequence to each of case data sequences; regarding one of the similarity parameters with a highest restoration parameters and under a similarity threshold as the best case; selecting the questions used in the best case, excluding a plurality of existed questions in a questionnaire record, so as to establish a suggested questionnaire, and obtaining a plurality of answers of the suggested questionnaire; including all multiple reference cases within a specific range of values in each of the answers; and selecting multiple treatment cases including a nice recovery record from a plurality of treatment groups as at least one recommended treatment.

Abstract: A tube assembly for delivering a substance is provided. The tube assembly includes a tube body, a sleeve body, a joint member, a handle member and a fixing member. The tube body has a tube end portion. The sleeve body is fitted around the tube body and has a sleeve end portion corresponding to the tube end portion. The tube end portion is fitted around one end of the joint member. The handle member is fitted around the sleeve body. The fixing member is fitted around the sleeve end portion, the handle member and the joint member at the same time so that the fixing member presses a part of the handle member, a part of the sleeve end portion and a part of the joint member inwards in a manner such that the tube body, the sleeve body and the handle member are fixed relative to the joint member.

Abstract: An egg cooking system includes two woks and each of the woks receives oil from an oil supply member. A support member is driven by a driving unit to allow one egg to be put in the at least one standby portion and the egg is pressed by the pressing member. A cracking member cracks the egg and the pressing unit moves toward the direction that the egg is located so that a claw is opened, and the egg flows into one of the woks. The egg is cooked for a pre-set time, and is dropped into the other wok to be cooked. The cooked egg is then dropped to a plate. The pressing unit presses the egg shell of the egg to further open the claw, and the egg shell drops into a garbage can.

Abstract: The present invention provides a new method for decreasing level of a proinflammatory cytokine in a subject, which is further able to treating cytokine release syndrome caused by CAR T-cell therapy or a disorder mediated by an overproduction of a proinflammatory cytokine. The method comprises administering to the subject in need thereof a therapeutically effective amount of a pharmaceutical composition which is comprising at least one selected from the group consisting of Phenothiazine derivatives, Graptopetalum paraguayense extract, Rhodiola rosea extract and Histone Deacetylase (HDAC) inhibitors.

Abstract: A packaging device including a first semiconductor device, a thermal dissipating component, an encapsulation layer, a via, and a pad. The first semiconductor device includes a substrate, an active region, and an electrode. The active region is disposed between the substrate and the electrode. The substrate has a first surface opposite to the active region, and the electrode has a second surface opposite to the active region. The thermal dissipating component is disposed on the first surface of the substrate. The encapsulation layer encloses the second surface of the electrode and a part of the thermal dissipating component, such that another part of the thermal dissipating component is exposed by the encapsulation layer. The pad is disposed on the encapsulation layer. The via is disposed in the encapsulation layer and connects the pad to the electrode.

Abstract: An electronic device adapted to connect to an external device is provided. The electronic device includes an input/output module, a control module, and a touch screen. The control module is electrically connected to the input/output module, and the control module is configured to send a request signal through the input/output module and receive set information corresponding to the request signal through the input/output module. The touch screen is electrically connected to the control module. When the touch screen generates a touch signal in response to a touch behavior, the control module converts the touch signal to a control signal based on the set information, and sends the control signal through the input/output module.

Abstract: A controlling device of a fuel cell system with multiple stack towers and a controlling method thereof are provided. The controlling device comprises a temperature sensing equipment, a processor and a pulse width modulation circuit. The fuel cell system comprises multiple fuel cell stacks. The controlling method further comprises: calculating an average temperature of the fuel cell stacks based on the temperatures of the fuel cell stacks by the temperature sensing equipment; determining whether differences between the average temperature and the temperatures of the fuel cell stacks fall within a preset range of average temperature difference by the processor, and adjusting an output current of at least one of the fuel cell stacks by the pulse width modulation circuit commanded by the processor when the difference between the average temperature and the temperature of the at least one fuel cell stack falls outside the preset range of average temperature difference.

Abstract: E-fuse cells and methods for protecting e-fuses are provided. An exemplary e-fuse cell includes an e-fuse having a first end coupled to a source node and a second end selectively coupled to a ground. Further, the exemplary e-fuse includes a selectively activated shunt path from the source node to the ground. Also, the exemplary e-fuse includes a device for activating the shunt path in response to an electrical overstress event.

Abstract: The SCR-based ESD device has a 4-layered PNPN structure (NPN and PNP junction transistors) disposed in SOI having first and second device wells (N-well and P-well) abut forming a NP junction near a midline. First and second contact regions disposed in device wells are coupled to high and low power sources (I/O pad and ground). Internal isolation regions (shallower STI) extending partially not touching the bottom of surface substrate separate the first and second contact regions. A vertical gate is disposed over the NP junction or over a shallower STI which overlaps the junction and separate the second contact regions in x-direction. One or more horizontal gates separate the second contact regions in y-direction and guide the device wells underneath the shallower STI to outer edges to connect with the first contact regions for body contacts. A process for forming the device is also disclosed and is compatible with CMOS processes.

Abstract: Antibodies and fragments thereof which bind to peptide-MHC complexes are described. In particular, an antibody binding to a peptide-MHC complex comprising a peptide of p53 and a MHC Class I molecule comprising ?-chain encoded by an HLA-A*24 allele is claimed. Also disclosed are compositions comprising such antibodies and fragments, and uses and methods of treating, preventing and diagnosing cancers using the same.

Abstract: Uses of n-butylidenephthalide (BP) in dopaminergic progenitor cell transplantation are provided, wherein the uses include using BP to enhance the therapeutic effect of dopaminergic progenitor cell transplantation, and using a combination of BP and BP-treated dopaminergic progenitor cells in dopaminergic progenitor cell transplantation. The uses especially relate to using BP to enhance the therapeutic effect of dopaminergic progenitor cell transplantation on Parkinson's disease.

Abstract: The SCR-based ESD device has a 4-layered PNPN structure (NPN and PNP junction transistors) disposed in SOI having first and second device wells (N-well and P-well) abut forming a NP junction near a midline. First and second contact regions disposed in device wells are coupled to high and low power sources (I/O pad and ground). Internal isolation regions (shallower STI) extending partially not touching the bottom of surface substrate separate the first and second contact regions. A vertical gate is disposed over the NP junction or over a shallower STI which overlaps the NP junction and separate the second contact regions in x-direction. One or more horizontal gates separate the second contact regions in y-direction and guide the device wells underneath the shallower STI to outer edges to connect with the first contact regions for body contacts. A process for forming the device is also disclosed and is compatible with CMOS processes.

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to transistor structures and methods of manufacture. The structure includes active metal lines separated by electrically floating metal layers which have a width less than a width of the active metal lines.

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to transistor structures and methods of manufacture. The structure includes active metal lines separated by electrically floating metal layers which have a width less than a width of the active metal lines.

Abstract: Methods, systems, and devices for audio dejittering are described. The method may include determining a mean delay applied to packets in a packet voice communication system, calculating, from the mean delay, a standard deviation for at least a subset of packets in a talk spurt, determining a target delay for the talk spurt by applying a moving average to the standard deviation, and applying the target delay to a first packet from the talk spurt.