Patents by Inventor Hsin-Liang Yeh

Hsin-Liang Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230106020
    Abstract: A light-emitting diode chip is described. The light-emitting diode chip includes a light-emitting structure, a first electrode, and a second electrode. The first electrode is disposed on the light-emitting structure and is electrically connected to the light-emitting structure. The second electrode is disposed on the light-emitting structure, and the second electrode and the first electrode are located on the same side of the light-emitting structure, wherein the second electrode is electrically connected to the light-emitting structure. The light-emitting diode chip has a first surface and a second surface which are opposite to each other, and a side surface connected between the first surface and the second surface. The side surface is substantially perpendicular to the first surface and the second surface, and an included angle between the side surface and the first surface is between 86 degrees and 94 degrees.
    Type: Application
    Filed: December 3, 2021
    Publication date: April 6, 2023
    Inventors: Li-Wei HUNG, Hsin-Liang YEH, Wei-Chen CHIEN, Zhen-Jin WANG
  • Publication number: 20220399478
    Abstract: A micro light-emitting film structure includes a first conductivity type semiconductor film, a light-emitting film, a second conductivity type semiconductor film, a first contact electrode, and a second contact electrode. The first conductivity type semiconductor film has first and second surfaces opposite to each other. The second surface includes an asperity. A height difference of relief of the asperity is less than or equal to 1 ?m. The light-emitting film is disposed on the first surface. The second conductivity type semiconductor film is connected to the light-emitting film sandwiched between the second conductivity type semiconductor film and the first conductivity type semiconductor film. The first contact electrode is connected to the first conductivity type semiconductor film. The second contact electrode is connected to the second conductivity type semiconductor film. A thickness of the micro light-emitting film structure is equal to or smaller than 10 ?m.
    Type: Application
    Filed: December 3, 2021
    Publication date: December 15, 2022
    Inventors: Ming-Sen HSU, Li-Wei HUNG, Hsin-Liang YEH, Wei-Chen CHIEN
  • Publication number: 20220131039
    Abstract: A micro light-emitting diode includes an epitaxial structure, an insulation layer, a first electrode, and a second electrode. The epitaxial structure includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The epitaxial structure has a cavity penetrating the second semiconductor layer and the light-emitting layer and exposing a portion of the first semiconductor layer. The insulation layer covers the epitaxial structure, and a side surface and a bottom surface of the cavity. The insulation layer has a first hole exposing a portion of the second semiconductor layer, and a second hole exposing a portion of the bottom surface. The first electrode covers the exposed portion of the bottom surface. The second electrode covers the exposed portion of the second semiconductor layer and is distant from the first electrode. The cavity is distant from an edge of the micro LED.
    Type: Application
    Filed: December 28, 2020
    Publication date: April 28, 2022
    Inventors: Li-Wei HUNG, Hsin-Liang YEH, Wei-Chen CHIEN, Ming-Sen HSU
  • Publication number: 20190067514
    Abstract: The present disclosure comprises a semiconductor light emitting element and a manufacturing method thereof. In the method, a light emitting element layer is firstly formed on an epitaxial substrate, and then a bonding adhesive is filled and a first substrate is bonded onto an upper surface of the light emitting element layer. Further, the epitaxial substrate is removed to expose a lower surface of the light emitting element layer and a second substrate is disposed on the lower surface. And further, the bonding adhesive is dissolved to remove the first substrate, and the light emitting element layer is finally cut together with the second substrate to form a plurality of semiconductor light emitting elements. The epitaxial substrate is replaced with the second substrate to solve the problem in which the substrate may be broken or warped during separation of the semiconductor light-emitting elements.
    Type: Application
    Filed: February 22, 2018
    Publication date: February 28, 2019
    Inventors: HSIN LIANG YEH, MING-SEN HSU
  • Publication number: 20110047753
    Abstract: A hinge is mounted between a cover and a base of an electronic device and has two tilting assemblies and a pivoting shaft connected to the cover, a connecting panel attached to the base, a limiting washer and an actuating washer. The actuating washer is rotated with the pivoting shaft and has at least one arc notch. The limiting washer is mounted around the actuating washer and has at least one boss inside and a limit outside. The connecting panel has a stop selectively abutting the limit. Each boss slides in the corresponding arc notch to compensate for lost rotation due embodying the stop and the limit. Therefore, the cover is rotatable by 180 degrees either clockwise or anticlockwise.
    Type: Application
    Filed: August 25, 2009
    Publication date: March 3, 2011
    Inventors: Hsin-Liang Yeh, Zion Lin