Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip may comprise a first metal line disposed over a substrate. A via may be disposed directly over a top of the first metal line and the via may comprise a first lower surface and a second lower surface above the first lower surface. A first dielectric structure may be disposed laterally adjacent to the first metal line and may be disposed along a sidewall of the first metal line. A first protective etch-stop structure may be disposed directly over a top of the first dielectric structure and the first protective etch-stop structure may vertically separate the second lower surface of the via from the top of the first dielectric structure.

Abstract: Integrated circuit devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a semiconductor substrate, a first ILD layer over the semiconductor substrate, and a first metal feature in the first ILD layer; depositing a second metal feature over the workpiece such that the second metal feature is electrically coupled to the first metal feature; patterning the second metal feature to form a first trench adjacent to the first metal feature; depositing a blocking layer over the workpiece, wherein the blocking layer selectively attaches to the first ILD layer; depositing a barrier layer over the workpiece, wherein the barrier layer selectively forms over the second metal feature relative to the first ILD layer; and depositing a second ILD layer over the workpiece.

Abstract: Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece that includes a substrate and an interconnect structure. The interconnect structure includes a first conductive feature disposed within a first inter-level dielectric layer. A blocking layer is selectively formed on the first conductive feature without forming the blocking layer on the first inter-level dielectric layer. An alignment feature is selectively formed on the first inter-level dielectric layer without forming the alignment feature on the blocking layer. The blocking layer is removed from the first conductive feature, and a second inter-level dielectric layer is formed on the alignment feature and on the first conductive feature. The second inter-level dielectric layer is patterned to define a recess for a second conductive feature, and the second conductive feature is formed within the recess.

Abstract: The present disclosure provides a method for forming an integrated circuit (IC) structure. The method comprises providing a substrate including a conductive feature; forming aluminum (Al)-containing dielectric layer on the conductive feature; forming a low-k dielectric layer on the Al-containing dielectric layer; and etching the low-k dielectric layer to form a contact trench aligned with the conductive feature. A bottom of the contact trench is on a surface of the Al-containing dielectric layer.

Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.

Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.

Abstract: A method includes forming a plurality of nanostructures over a substrate; etching the plurality of nanostructures to form recesses; forming source/drain regions in the recesses; removing first nanostructures of the plurality of nanostructures leaving second nanostructures of the plurality of nanostructures; depositing a gate dielectric over and around the second nanostructures; depositing a protective material over the gate dielectric; performing a fluorine treatment on the protective material; removing the protective material; depositing a first conductive material over the gate dielectric; and depositing a second conductive material over the first conductive material.

Abstract: A quick-release fastener structure includes a body portion and an engaging portion. The body portion is fitted to a first object. The engaging portion is movably fitted to the body portion. The engaging portion has a head portion, a bar portion with an end connected to the head portion, and an engaging-connecting portion disposed at another end of the bar portion. The engaging-connecting portion is insertedly engaged with or separated from a second object. Therefore, the quick-release fastener structure operates by fitting the body portion to the first object and allowing the engaging portion to be engagedly connected to the second object or removed from the second object, such that the at least two objects are coupled together and separated repeatedly and quickly.

Abstract: A fastener structure and an assembly method thereof are introduced. The fastener structure includes a body and a fastener. The body has a limiting structure and is for assembling at a first object. The fastener and the body are movably assembled. The fastener has a limiting portion, which coordinates with the limiting structure to limit a movement stroke of the fastener, so as to engage or disengage the fastener with or from a second object. Thus, the body can be assembled with the first object and the fastener can be engaged with or disengaged from the second object so as to complete quick coupling and separation of two objects, further achieving effects of repeated quick coupling and separation.

Abstract: A quick-release fastener structure includes a body portion and an engaging portion. The body portion is fitted to a first object. The engaging portion is movably fitted to the body portion. The engaging portion has a head portion, a bar portion with an end connected to the head portion, and an engaging-connecting portion disposed at another end of the bar portion. The engaging-connecting portion is insertedly engaged with or separated from a second object. Therefore, the quick-release fastener structure operates by fitting the body portion to the first object and allowing the engaging portion to be engagedly connected to the second object or removed from the second object, such that the at least two objects are coupled together and separated repeatedly and quickly.

Abstract: A method for recognizing the position of a wireless controller is applied to an interactive gaming device including a wireless controller, a main apparatus and a host. The main apparatus includes a first ultrasonic receiving module, a second ultrasonic receiving module and a third ultrasonic module which are arranged as a triangle shape. The wireless controller includes an ultrasonic transmitting module for sending an ultrasonic wave which is received by the ultrasonic receiving modules in order to obtain three ultrasonic wave transmission times. The main apparatus sends the ultrasonic wave transmission times to the host. The host calculates the ultrasonic wave transmission times and therefore recognizes the position of the wireless controller. When the wireless controller is moved, the host obtains plurality of coordinate values indicating the motion track of the wireless controller. The motion track of the wireless controller is shown in a display by monitoring the coordinate values.