Abstract: A method includes removing a first dummy gate stack and a second dummy gate stack to form a first trench and a second trench. The first dummy gate stack and the second dummy gate stack are in a first device region and a second device region, respectively. The method further includes depositing a first gate dielectric layer and a second gate dielectric layer extending into the first trench and the second trench, respectively, forming a fluorine-containing layer comprising a first portion over the first gate dielectric layer, and a second portion over the second gate dielectric layer, removing the second portion, performing an annealing process to diffuse fluorine in the first portion into the first gate dielectric layer, and at a time after the annealing process, forming a first work-function layer and a second work-function layer over the first gate dielectric layer and the second gate dielectric layer, respectively.

Abstract: A semiconductor device includes a conductive line and a conductive via contacting the conductive line. A first dielectric material contacts a first sidewall surface of the conductive via. A second dielectric material contacts a second sidewall surface of the conductive via. The first dielectric material includes a first material composition, and the second dielectric material includes a second material composition different than the first material composition.

Abstract: The present disclosure relates to exclusion rings for use in processing a semiconductor substrate in a processing chamber, such as a chemical vapor deposition chamber. The exclusion ring includes an alignment structure that cooperates with an alignment structure on a platen on which the exclusion ring will rest during processing of the wafer. The first alignment structure includes a guiding surface which promotes the reception of and positioning of the second alignment structure within the first alignment structure. Methods of utilizing the described exclusion rings are also described.

Abstract: The present disclosure relates to exclusion rings for use in processing a semiconductor substrate in a processing chamber, such as a chemical vapor deposition chamber. The exclusion ring includes an alignment structure that cooperates with an alignment structure on a platen on which the exclusion ring will rest during processing of the wafer. The first alignment structure includes a guiding surface which promotes the reception of and positioning of the second alignment structure within the first alignment structure. Methods of utilizing the described exclusion rings are also described.

Abstract: A semiconductor device package includes a semiconductor device, a non-semiconductor substrate over the semiconductor device, and a first connection element extending from the semiconductor device to the non-semiconductor substrate and electrically connecting the semiconductor device to the non-semiconductor substrate.

Abstract: A semiconductor package structure includes a substrate, a semiconductor die, a lid and a cap. The semiconductor die is disposed on the substrate. The lid is disposed on the substrate. The cap is disposed on the lid. The substrate, the lid and the cap define a cavity in which the semiconductor die is disposed, and a pressure in the cavity is greater than an atmospheric pressure outside the cavity.

Abstract: A semiconductor device package includes a semiconductor device, a non-semiconductor substrate over the semiconductor device, and a first connection element extending from the semiconductor device to the non-semiconductor substrate and electrically connecting the semiconductor device to the non-semiconductor substrate.

Abstract: A semiconductor package structure includes a substrate, a semiconductor die, a lid and a cap. The semiconductor die is disposed on the substrate. The lid is disposed on the substrate. The cap is disposed on the lid. The substrate, the lid and the cap define a cavity in which the semiconductor die is disposed, and a pressure in the cavity is greater than an atmospheric pressure outside the cavity.