Abstract: A method is disclosed for etching a contact hole in a stack of dielectric layers. The method minimizes bridging defects between the contact hole and adjacent conductive structures. A substrate has a conductive material layer and an active device disposed thereon. An etch stop layer covers the device and the conductive material, A layer of interlevel dielectric and antireflective coating layers are then provided. A hole is etched through the stack using patterned photoresist. Ashing is used to remove all but the etch stop layer and the interlevel dielectric layer. An isolation liner is deposited over the interlevel dielectric layer, the sidewall surfaces of the hole and the exposed upper surface of the etch stop layer. Another etch removes the isolation liner disposed over the exposed upper surface of the etch stop layer, and removes the underlying etch stop layer to expose an upper surface of the conductive material layer.